Semiconductor
HGTG20N120E2
April 1995
Features
• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between +25
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTG20N120E2 TO-247 G20N120E2
o
C and +150oC.
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
Terminal Diagram
G
EMITTER
COLLECTOR
GATE
C
E
Absolute Maximum Ratings T
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Breakdown Voltage R
Collector Current Continuous
At T
= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching SOA at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At V
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
GE
At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
= +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 0.8 BV
C
= 720V, TC = +125oC, RGE = 25Ω
= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
> +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC
C
= +25oC, Unless Otherwise Specified
C
= 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . BV
GE
HGTG20N120E2 UNITS
CES
CGR
C25
C90
CM
GES
GEM
D
, T
J
STG
L
SC
SC
1200 V
1200 V
34
20
100 A
±20 V
±30 V
CES
150 W
-55 to +150
260
3
15
o
o
µs
µs
A
A
-
C
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1995
3-98
File Number 3370.2
Specifications HGTG20N120E2
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
LIMITS
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown
BV
CESIC
= 250µA, VGE = 0V 1200 - - V
Voltage
Collector-Emitter Leakage Current I
Collector-Emitter Saturation
Voltage
V
CE(SAT)IC
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R
CES
GE(TH)IC
GES
GEP
G(ON)IC
D(ON)
R
FI
OFF
D(ON)
R
FI
OFF
θJC
VCE = BV
V
I
C
CES
= 0.8 BV
CE
= I
= I
CES
, VGE = 15V TC = +25oC - 2.9 3.5 V
C90
, VGE = 10V TC = +25oC - 3.1 3.8 V
C90
= 500µA,
VCE = V
GE
VGE = ±20V - - ±250 nA
IC = I
, VCE = 0.5 BV
C90
= I
,
C90
VCE = 0.5 BV
CES
RL = 48Ω IC = I
L = 50µH - 520 620 ns
RL = 48Ω IC = I
L = 50µH - 420 520 ns
TC = +25oC - - 250 µA
TC = +125oC - - 1.0 mA
= +125oC - 3.0 3.6 V
T
C
T
= +125oC - 3.3 4.0 V
C
TC = +25oC 3.0 4.5 6.0 V
CES
- 7.0 - V
VGE = 15V - 110 150 nC
= 20V - 150 200 nC
V
GE
, VGE = 15V,
C90
VCE = 0.8 BV
RG = 25Ω,
CES
,
- 100 - ns
- 150 - ns
TJ = +125oC
- 780 1000 ns
- 7.0 - mJ
, VGE = 10V,
C90
VCE = 0.8 BV
RG = 25Ω,
CES
,
- 100 - ns
- 150 - ns
TJ = +125oC
- 780 1000 ns
- 7.0 - mJ
- 0.70 0.83
NOTE:
1. Turn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
UNITMIN TYP MAX
o
C/W
3-99
HGTG20N120E2
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 4. FALL TIME AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT. (REFER TO
APPLICATION NOTES AN7254 AND AN7260)
3-100
HGTG20N120E2
Typical Performance Curves
FIGURE 7. SATURATION VOLTAGE AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
(Continued)
FIGURE 8. TURN-OFF SWITCHING LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-OFF DELAY AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
FIGURE 10. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT AND VOLTAGE
3-101
Test Circuit
HGTG20N120E2
L = 50µH
= 1/R
1/R
G
20V
0V
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
+ 1/R
GEN
R
GEN
GE
= 50Ω
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows f
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
MAX1
(the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are
possible. t
point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum
value. Device turn-off delay can establish an additional frequency limiting condition for an application other than T
t
D(OFF)I
lightly loaded condition. f
W
OFF
(T
JMAX
tion losses must not exceed Pd. A 50% duty factor was used
(Figure 10) and the conduction losses (Pc) are approximated
by Pc = (V
instantaneous power loss starting at the trailing edge of the
input pulse and ending at the point where the collector
current equals zero (I
The switching power loss (Figure 10) is defined as f
W
OFF
they can be greatly influenced by external circuit conditions
and components.
) plots are possible using the information shown
CE
or
MAX1
whichever is smaller at each point. The information is
is defined by f
is defined as the time between the 90%
D(OFF)I
MAX1
= 0.05/t
D(OFF)I
. t
D(OFF)I
deadtime
JMAX
is important when controlling output ripple under a
is defined by f
MAX2
MAX2
= (Pd - Pc)/
. The allowable dissipation (Pd) is defined by Pd =
- TC)/R
. The sum of device switching and conduc-
θJC
• ICE)/2. W
CE
is defined as the integral of the
OFF
= 0A).
CE
MAX2
. Turn-on switching losses are not included because
+
V
CC
960V
RGE = 50Ω
-
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “† ECCOSORBD LD26” or equivalent.
.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
•
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
† Trademark Emerson and Cumming, Inc.
3-102
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