Datasheet HGTG20N120C3D Datasheet (Intersil Corporation)

HGTG20N120C3D

Data Sheet October 1998 File Number

45A, 1200V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG20N120C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

The diode used in anti-parallel with the IGBT was formerly
developmental type TA49155.

The IGBT diode combination was formerly developmental
type TA49264.

o

C and 150oC.

Features

• 45A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 300ns at T

• Short Circuit Rating

• Low Conduction Loss

Symbol

C

G

E

4508.1

= 150oC

J

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N120C3D TO-247 20N120C3D

NOTE: When ordering, use the entire part number.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY

ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931
4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872
4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413
4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045
4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143
4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

Packaging

JEDEC STYLE TO-247

E

C

G

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HGTG20N120C3D

Absolute Maximum Ratings T

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

= 25oC, Unless Otherwise Specified

C

CES

HGTG20N120C3D UNITS

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

45 A
20 A

160 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2. . . . . . . . . . . . . . . . . . . . . SSOA 20A at 1200V

Power Dissipation Total at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

208 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-40 to 150
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 720V, TJ = 125oC, RGE = 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

CE(SAT)IC

CES

CES

IC = 250µA, VGE = 0V 1200 - - V
VCE = BV

= I

C110

VGE = 15V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)

GES

IC = 250µA, VCE = V
VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC,

RG = 3Ω,
VGE = 15V

L = 100µH,
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

IC = I

IC = I

C110

C110

VCE = 0.5 BV

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

rI

fI

ON1

ON2

OFF

IGBT and Diode at TJ = 25oC

ICE = I

C110

VCE = 0.8 BV

VGE = 15V

RG= 3Ω

L = 1mH

Test Circuit - (Figure 19)

CES

TC = 25oC - - 150 µA
TC = 150oC - - 2.0 mA

,

TC = 25oC - 2.4 3.0 V
TC = 150oC - 2.2 2.9 V

GE

V
V

, VCE = 0.5 BV
,

VGE = 15V - 93 130 nC

CES

VGE = 20V - 186 230 nC

CES

5.0 7.0 7.5 V

= 960V 60 - - A

CE (PK)

= 1200V 20 - - A

CE (PK)

CES

- 9.4 - V

-39- ns

-22- ns

- 110 - ns

-95- ns

- 950 - µJ

- 2250 - µJ

- 1200 2400 µJ

2

HGTG20N120C3D

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON1

ON2

OFF

EC

rr

IGBT and Diode at TJ = 150oC

ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V

RG= 3Ω

L = 1mH

Test Circuit - (Figure 19)

-39- ns

-20- ns

- 360 550 ns

- 300 400 ns

- 950 - µJ

- 3365 - µJ

- 4400 8000 µJ
IEC = 20A - 2.6 3.4 V
IEC= 1A, dIEC/dt = 200A/µs--50ns
IEC= 20A, dIEC/dt = 200A/µs--70ns

Thermal Resistance

R

θJC

IGBT - - 0.6

Junction To Case

Diode - - 1.25

NOTES:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 19.

o

o

C/W
C/W

ON2

is

Typical Performance Curves

45
40
35
30
25
20
15
10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

(Unless Otherwise Specified)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

VGE= 15V

70

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 100µH

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3

HGTG20N120C3D

Typical Performance Curves

60

10

f

= 0.05 / (t

MAX1

f

= (PD- PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

, OPERATING FREQUENCY (kHz)

MAX

f

1

(DUTY FACTOR = 50%)

R

= 0.6oC/W, SEE NOTES

ØJC

5

TJ= 150oC, RG = 3Ω, L = 1mH,

+ t

d(OFF)I

ON2

10

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

d(ON)I

+ E

)

OFF

(Unless Otherwise Specified) (Continued)

V

CE

T

C

o

75

o

75

o

110
110oC

)

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

70

DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

024

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

GE

= 12V

TC = 150oC

TC = 25oC

TC = -40oC

6810

= 960V

C
C
C

V

15V
12V
15V
12V

GE

35 400

VCE = 720V, RGE = 3Ω, TJ= 125oC

30

25

20

15

10

, SHORT CIRCUIT WITHSTAND TIME (µs)

6020

5

SC

t

11 12 13 14 15 16

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

350

300

250

200

150

t

SC

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

100

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

200

DUTY CYCLE <0.5%, VGE = 15V

175

PULSE DURATION = 250µs

150

125

100

75

50

25

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

024

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

6810

TC = -40oC

TC = 150oC

TC = 25oC

12 14

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

20.0
RG = 3Ω, L = 1mH, VCE = 960V

17.5

15.0

12.5

10.0

7.5

5.0

, TURN-ON ENERGY LOSS (mJ)

2.5

ON2

E

TJ = 25oC, TJ = 150oC, VGE = 12V

0

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, TJ = 150oC, VGE = 15V

2010 3025155

35 40 45

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

12

RG = 3Ω, L = 1mH, VCE = 960V

10

8

TJ = 150oC, VGE = 12V OR 15V

6

4

, TURN-OFF ENERGY LOSS (mJ)

2

OFF

E

0

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 12V OR 15V

251510 20 305

4035 45

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

4

HGTG20N120C3D

Typical Performance Curves

55

RG = 3Ω, L = 1mH, VCE = 960V

50

TJ = 25oC, TJ = 150oC, VGE = 12V

TJ = 25oC, TJ = 150oC, VGE = 15V

20

, TURN-ON DELAY TIME (ns)

dI

t

45

40

35

30

1051525

ICE, COLLECTOR TO EMITTER CURRENT (A)

(Unless Otherwise Specified) (Continued)

30

FIGURE 9. TURN-ON DELAYTIME vs COLLECTOR TO

EMITTER CURRENT

450

400

350

300

250

200

, TURN-OFF DELAY TIME (ns)

150

100

d(OFF)I

t

50

RG = 3Ω, L = 1mH,

TJ = 150oC, VGE = 12V, VGE = 15V
TJ = 25oC, VGE = 12V, VGE = 15V

10 15 305

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

VCE = 960V

2520

4035 45

300

RG = 3Ω, L = 1mH, VCE = 960V

250

TJ = 25oC, TJ = 150oC, VGE= 12V

200

150

TJ = 25oC, TJ = 150oC, VGE= 15V

100

, RISE TIME (ns)

rI

t

50

0

10

ICE, COLLECTOR TO EMITTER CURRENT (A)

305

252015

454035

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

350

RG = 3Ω, L = 1mH, VCE = 960V

300

TJ = 150oC, VGE = 12V AND 15V

250

200

, FALL TIME (ns)

150

fI

t

100

50

454035

TJ = 25oC, VGE = 12V AND 15V

10 15 305

ICE, COLLECTOR TO EMITTER CURRENT (A)

2520

454035

FIGURE 11. TURN-OFF DELAYTIME vs COLLECTOR TO

EMITTER CURRENT

175

DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs

150

125

100

75

50

25

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

V

, GATE TO EMITTER VOLTAGE (V)

GE

TC = 150oC

= 10V

CE

TC = 25oC

TC = -40oC

11

137 8 9 10 12

14 15

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

5

FIGURE 12. FALLTIME vs COLLECTOR TO EMITTER

CURRENT

15

I

= 1mA, RL = 30Ω, TC = 25oC

G (REF)

12

VCE = 1200V

9

VCE = 800V

150100

6

, GATE TO EMITTER VOLTAGE (V)

3

GE

V

0

VCE = 400V

0

50

25 75 175125

QG, GATE CHARGE (nC)

HGTG20N120C3D

Typical Performance Curves

C, CAPACITANCE (pF)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

0

10

0.50

0.20

(Unless Otherwise Specified) (Continued)

8000
7000

6000

5000

4000

3000

2000

1000

0

0 5 10 15 20 25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C

C

C

IES

OES

RES

FREQUENCY = 1MHz

0.10

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

-2

10

θJC

Z

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

100

150oC

10

, FORWARD CURRENT (A)

F

I

1

012 3 45

V

VF, FORWARD VOLTAGE (V)

, FORWARD VOLTAGE (V)

F

25oC

FIGURE 17. DIODE FORWARDCURRENT vs FORWARD

VOLTAGE DROP

t

P

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-2

10

70

= 150oC

T

C

60

50

t

rr

40

t

30

t

20

t, RECOVERY TIMES (ns)

10

2

X R

θJC

10

) + T

θJC

C

-1

a

b

2

IF, FORWARD CURRENT (A)

D

0

10

5

FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT

1

t

2

1

10

10

201

6

Test Circuit and Waveforms

HGTG20N120C3D

HGTG20N120C3D

90%

V

GE

L = 1mH

RG = 3Ω

+

= 960V

V

DD

-

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate­insulation damage by the electrostatic discharge of energy
through the devices. When handling these de vices , care
should be exercisedto assure that the static charge built in the
handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
howev er, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the follo wing basic precautions are tak en:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from
circuits with power on.

5. Gate Voltage Rating - Neverexceed the gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open­circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. Gate Protection- These devicesdo not havean internal
monolithic Zener diode from gate to emitter. If gate

. Exceeding the rated VGE can result in

GEM

V

CE

90%

I

CE

t

d(OFF)I

10%

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowable dissipation (P
The sum of device switching and conduction losses must not
exceed P

. A 50% duty factor was used (Figure 3) and the

D

conduction losses (P
P

=(VCExICE)/2.

C

E

and E

ON2

OFF

shown in Figure 20. E
power loss (I

CE

integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation forE
i.e., the collector current equals zero (I

or f

MAX1

MAX1

d(OFF)I

MAX2

C

are defined in the switching waveforms

x VCE) during turn-on and E

E

t

fI

MAX2

= 0.05/(t

and t

d(ON)I

= (PD - PC)/(E

) is defined by PD=(TJM-TC)/R

D

) are approximated by

is the integral of the instantaneous

ON2

E

ON2

OFF

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

are defined in Figure 20.

CE

protection is required an external Zener is recommended.

10%

t

rI

t

d(ON)I

+ t

d(ON)I

JM

+ E

OFF

ON2

is the

OFF

x VCE) during

CE

= 0).

).

. t

d(OFF)I

). The

θJC

OFF

.

;

7

ECCOSORBD‰ is a Trademark of Emerson and Cumming, Inc.

TO-247

3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE

HGTG20N120C3D

E

Q

ØR

D

A

ØS

TERM. 4

ØP

SYMBOL

A 0.180 0.190 4.58 4.82 -

b 0.046 0.051 1.17 1.29 2, 3

b

1

b

2

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

0.060 0.070 1.53 1.77 1, 2

0.095 0.105 2.42 2.66 1, 2

c 0.020 0.026 0.51 0.66 1, 2, 3

D 0.800 0.820 20.32 20.82 -

L

1

L

b

1

b

2

c

b

2

1

e

3

e

1

J

1

3

BACK VIEW

2

1

E 0.605 0.625 15.37 15.87 -

e 0.219 TYP 5.56 TYP 4

e

1

J

1

0.438 BSC 11.12 BSC 4

0.090 0.105 2.29 2.66 5

L 0.620 0.640 15.75 16.25 -

L

1

0.145 0.155 3.69 3.93 1

ØP 0.138 0.144 3.51 3.65 -

Q 0.210 0.220 5.34 5.58 ­ØR 0.195 0.205 4.96 5.20 ­ØS 0.260 0.270 6.61 6.85 -

NOTES:

1. Lead dimension and finish uncontrolled in L1.

2. Lead dimension (without solder).

3. Add typically 0.002 inches (0.05mm) for solder coating.

4. Positionofleadtobe measured 0.250 inches(6.35mm)from bottom
of dimension D.

5. Positionofleadtobe measured 0.100 inches(2.54mm)from bottom
of dimension D.

6. Controlling dimension: Inch.

7. Revision 1 dated 1-93.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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