Datasheet HGTG20N100D2 Datasheet (Intersil Corporation)

HGTG20N100D2

May 1995

Features

• 34A, 1000V

• Latch Free Operation

• Typical Fall Time 520ns

• High Input Impedance

• Low Conduction Loss

Description

The HGTG20N100D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS­FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25

IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen­tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.

PART NUMBER PACKAGE BRAND

HGTG20N100D2 TO-247 G20N100D2

o

C and +150oC.

PACKAGING AVAILABILITY

20A, 1000V N-Channel IGBT

Package

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE

METAL)

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

G

EMITTER

C

E

COLLECTOR

GATE

Absolute Maximum Ratings T

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 0.8 BV

Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

(0.125 inch from case for 5 seconds)

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

CE(PEAK)

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

= 600V, TC = +125oC, RGE = 25Ω.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

= +25oC, Unless Otherwise Specified

C

at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . t

CES

CGR

C25
C90

CM

GES

GEM

STG

SC
SC

HGTG20N100D2 UNITS

1000 V
1000 V

34 A
20 A

100 A

±20 V
±30 V

CES

D

L

150 W

-55 to +150
260

3 µs

15 µs

-

o

C

o

C

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

3-93

File Number 2826.3

Specifications HGTG20N100D2

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS

Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I

Collector-Emitter Saturation Voltage V

Gate-Emitter Threshold Voltage V

Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-Off Energy (Note 1) W
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off t
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R

NOTE: 1. T urn-Off Energy Loss (W

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total T urn-Of f Energy Loss.

CES

CES

CE(SAT)

GE(TH)

GES

GEP

G(ON)

D(ON)I

RI

D(OFF)I

FI
OFF

D(ON)I

RI

D(OFF)I

FI
OFF
θJC

LIMITS

UNITSMIN TYP MAX

IC = 250mA, VGE = 0V 1000 - - V
VCE = BV

CES

VCE = 0.8 BV
IC = I

,

C90

VGE = 15V

IC = I

,

C90

VGE = 10V

IC = 500µA,
VCE = V

GE

TC = +25oC - - 250 µA

CESTC

= +125oC - - 1.0 mA
TC = +25oC - 3.1 3.8 V
TC = +125oC - 2.9 3.6 V
TC = +25oC - 3.3 4.1 V
TC = +125oC - 3.2 4.0 V
TC= +25oC 3.0 4.5 6.0 V

VGE = ±20V - - ±250 nA
IC = I

, VCE = 0.5 BV

C90

IC = I

,

C90

VCE = 0.5 BV

L = 50µH, IC = I

VGE = 15V - 120 160 nC

CES

VGE = 20V - 163 212 nC

, RG = 25Ω,

C90

VGE = 15V, TJ = +125oC,
VCE = 0.8 BV

CES

CES

- 7.1 - V

- 100 - ns

- 150 - ns

- 500 650 ns

- 520 680 ns

- 3.7 - mJ

L = 50µH, IC = I
VGE = 10V, TJ = +125oC,
VCE = 0.8 BV

C90

CES

, RG = 25Ω,

- 100 - ns

- 150 - ns

- 410 530 ns

- 520 680 ns

- 3.7 - mJ

- 0.7 0.83

o

C/W

Typical Performance Curves

40

PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V

30

20

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

0246810

, GATE-TO-EMITTER VOLTAGE (V)

V

GE

T

= +150oC

C

CE

= 10V

TC = +25oC

TC = -40oC

80

70

60

50

40

30

VGE = 6.0V

20

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

0246810

FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)

3-94

PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = +25oC

V

= 15V

GE

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VGE = 8.5V

VGE = 8.0V

VGE = 7.5V

VGE = 7.0V

VGE = 6.5V

HGTG20N100D2

Typical Performance Curves

(Continued)

2.5

35

30

V

= 15V

GE

2.0

= 800V, TJ = +150oC,

V

CE

= 15V, RG = 25Ω,L = 50µH

V

GE

25

VGE = 10V

1.5

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

+25 +50 +75 +100 +125 +150

T

, CASE TEMPERATURE (oC)

C

1.0

, FALL TIME (µs)

FI

t

0.5

0.0
11040

ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT

6000

5000

4000

C

ISS

3000

C

2000

C, CAPACITANCE (pF)

OSS

1000

C

RSS

0

0 5 10 15 20 25

, COLLECTOR-TO-EMITTER VOLTAGE (V)

V

CE

f = 1MHz

1000

750

500

250

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0

VCC = BV

CES

0.75 BV

0.50 BV

0.25 BV

GATE­EMITTER
VOLTAGE

CES
CES

CES

COLLECTOR-EMITTER VOLTAGE

I

G(REF)

20

I

G(ACT)

TIME (µs)

I

0.75 BV

0.50 BV

0.25 BV

RL = 29Ω

G(REF)

V

GE

VCC = BV

CES
CES

CES

= 1.8mA
= 10V

CES

I

G(REF)

80

I

G(ACT)

10

5

0

FIGURE 5. CAPACITANCE vs COLLECT OR-EMITTER VOLTAGE FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-

STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)

, GATE-EMITTER VOLTAGE (V)

GE

V

5

TJ = +150oC

4

VGE = 10V

10

T
R

3

VGE = 15V

1.0

2

, SATURATION VOLTAGE (V)

1

CE(ON)

V

0

11040

, TURN-OFF SWITCHING LOSS (mJ)

OFF

W

0.1
11040

ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER

FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-

CURRENT

3-95

= +150oC, VGE = 15V,

J

= 25Ω, L = 50µH

G

VCE = 800V, VGE = 10V, 15V

= 400V, VGE = 10V, 15V

V

CE

, COLLECTOR-EMITTER CURRENT (A)

I

CE

EMITTER CURRENT

HGTG20N100D2

Typical Performance Curves

1.2
= 15V, RG = 50Ω

V

GE

1.0

(Continued)

T

= +150oC

J

V

= 800V

CE

L = 50µH

VGE = 10V, RG = 50Ω

0.8

VGE = 15V, RG = 25Ω

0.6

VGE = 10V, RG = 25Ω

0.4

, TURN-OFF DELAY (µs)

D(OFF)I

t

0.2

0.0

11040

ICE, COLLECTOR-EMITTER CURRENT (A)

FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER

CURRENT

40

VGE = 10V

10

TJ = +150oC

100

VCE = 400V

f

= 0.05/t

MAX1

f

MAX2

PC = DUTY FACTOR = 50%
R

θJC

10

, OPERATING FREQUENCY (kHz)

OP

f

TJ = +150oC, TC = +75oC, VGE = 15V
R

G

D(OFF)I

= (PD - PC)/W

= 0.7oC/W

= 25Ω, L = 50µH

OFF

V

= 800V

CE

1

1 10 100

I

, COLLECTOR-EMITTER CURRENT (A)

NOTE:

CE

PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION

FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-

EMITTER CURRENT AND VOLTAGE

Test Circuit

TJ = +25oC

, COLLECTOR-EMITTER CURRENT (A)

CE

I

1

12 3 4 5

V

, SATURATION VOLTAGE (V)

CE(ON)

FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE

L = 50µH

1/R

= 1/R

G

+ 1/R

GEN

R

GEN

= 50Ω

GE

V

CC

800V

+

-

20V

0V

RGE = 50Ω

FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT

3-96

Operating Frequency Information

HGTG20N100D2

Operating frequency information for a typical device (Figure

10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I

) plots are possible using the information shown

CE

for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows f
f

whichever is smaller at each point. The information is

MAX2

MAX1

or

based on measurements of a typical device and is bounded
by the maximum rated junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/t

D(OFF)I

. t

D(OFF)I

deadtime
(the denominator) has been arbitrarily held to 10% of the on­state time for a 50% duty factor. Other definitions are possible.
t

is defined as the time between the 90% point of the

D(OFF)I

trailing edge of the input pulse and the point where the
collector current falls to 90% of its maximum value. Device

turn-off delay can establish an additional frequency limiting
condition for an application other than T

JMAX

. t

D(OFF)I

is
important when controlling output ripple under a lightly loaded
condition.

f

is defined by f

MAX2

dissipation (P

) is defined by PD = (T

D

= (PD - PC)/W

MAX2

JMAX

. The allowable

OFF

- TC)/R

θJC

. The sum
of device switching and conduction losses must not exceed P
A 50% duty factor was used (Figure 10) and the conduction
losses (P

) are approximated by PC = (VCE • ICE)/2. W

C

OFF

is
defined as the integral of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (I

The switching power loss (Figure 10) is defined as f
W

. Turn-on switching losses are not included because they

OFF

CE

= 0A).

MAX2

can be greatly influenced by external circuit conditions and com­ponents.

.

D

•

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
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