Datasheet HGTD7N60C3S Datasheet (Intersil Corporation)

HGTD7N60C3S, HGTP7N60C3

Data Sheet January 2000

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60C3S and HGTP7N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150

o

C.

o

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49115.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD7N60C3S TO-252AA G7N60C
HGTP7N60C3 TO-220AB G7N60C3

File Number 4141.3

Features

• 14A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

C

• Short Circuit Rating

= 150oC

J

• Low Conduction Loss

Packaging

JEDEC TO-220AB

EMITTER

JEDEC TO-252AA

COLLECTOR

GATE

COLLECTOR (FLANGE)

NOTE: When ordering, usethe entire partnumber. Addthesuffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
HGTD7N60C3S9A.

GATE
EMITTER

COLLECTOR
(FLANGE)

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTD7N60C3S, HGTP7N60C3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTD7N60C3S HGTP7N60C3 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

CM

GES

GEM

14 A

7A

56 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 40A at 480V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

60 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-40 to 150
260

1 µs
8 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG= 50Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 3mA, VGE= 0V 16 30 - V
VCE = BV
VCE = BV

Collector to Emitter Saturation Voltage V

CE(SAT)IC

= I

C110

VGE = 15V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

GE(TH)

GES

IC = 250µA,
VCE = V

GE

VGE = ±25V - - ±250 nA

Switching SOA SSOA TJ = 150oC

RG = 50Ω
VGE = 15V

L = 1mH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

IC = I

IC = I

C110

C110

VCE = 0.5 BV

CES

CES

,

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.6 2.0 V
TC = 150oC - 1.9 2.4 V
TC = 25oC 3.0 5.0 6.0 V

V
V

, VCE = 0.5 BV
,

VGE = 15V - 23 30 nC

CES

VGE = 20V - 30 38 nC

= 480V 40 - - A

CE(PK)

= 600V 6 - - A

CE(PK)

CES

-8-V

2

HGTD7N60C3S, HGTP7N60C3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R

rI

fI

ON

OFF

θJC

TJ = 150oC

ICE = I

C110

V

= 0.8 BV

CE(PK)

VGE = 15V

RG= 50Ω

L = 1.0mH

CES

- 8.5 - ns

- 11.5 - ns

- 350 400 ns

- 140 275 ns

- 165 - µJ

- 600 - µJ

- - 2.1

NOTE:

3. Turn-OffEnergyLoss (E

) isdefinedas the integralofthe instantaneous powerlossstarting at thetrailingedge of the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn­On losses include diode losses.

Typical Performance Curves

40

DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs

35

30

25

TC = 150oC

20

T

= 25oC

C

15

TC = -40oC

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

4681012

VGE, GATE TO EMITTER VOLTAGE (V)

CE

= 10V

14

40

PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,

35

= 25oC

T

C

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

VGE = 15.0V

0246810

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

12.0V

o

C/W

10.0V

9.0V

8.5V

8.0V

7.5V

7.0V

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

40

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V

35

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TC = -40oC

TC = 150oC

TC = 25oC

40

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V

35

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TC = -40oC

TC = 25oC

TC = 150oC

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

3

HGTD7N60C3S, HGTP7N60C3

Typical Performance Curves (Continued)

15

12

9

6

3

, DC COLLECTOR CURRENT (A)

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

= 15V

V

GE

FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE

TEMPERATURE

50

TJ = 150oC, RG = 50Ω, L = 1mH, V

40

30

20

10

, TURN-ON DELAY TIME (ns)

VGE = 10V

VGE = 15V

CE(PK)

= 480V

12

VCE = 360V, RG = 50Ω, TJ = 125oC

10

8

6

4

, SHORT CIRCUIT WITHSTAND TIME (µS)

SC

2

t

10 11 12

V

, GATE TO EMITTER VOLTAGE (V)

GE

FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

500

TJ = 150oC, RG = 50Ω, L = 1mH, V

450

400

350

300

, TURN-OFF DELAY TIME (ns)

250

VGE = 10V OR 15V

CE(PK)

I

SC

t

SC

14 1513

= 480V

140

120

100

80

60

, PEAK SHORT CIRCUIT CURRENT(A)

SC

I

40

d(ON)I

t

5

2 5 11 14

I

CE

8

, COLLECTOR TO EMITTER CURRENT (A)

17 20

FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

200

TJ = 150oC, RG = 50Ω, L = 1mH, V

100

, TURN-ON RISE TIME (ns)

rI

10

t

5

2 8 11 14 17 205

ICE, COLLECTOR TO EMITTER CURRENT (A)

= 480V

CE(PK)

VGE = 10V

VGE = 15V

FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

d(OFF)I

t

200

2 8 11 14 17 20

5

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

300

TJ = 150oC, RG = 50Ω, L = 1mH, V

250

200

150

, FALL TIME (ns)

fI

t

100

2 8 11 14 17 205

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE = 10V or 15V

CE(PK)

= 480V

FIGURE 10. TURN-OFF FALLTIME vs COLLECTOR TO

EMITTER CURRENT

4

HGTD7N60C3S, HGTP7N60C3

Typical Performance Curves (Continued)

2000

TJ = 150oC, RG = 50Ω, L = 1mH, V

1000

500

100

, TURN-ON ENERGY LOSS (µJ)

ON

E

40

2 8 11 14 17 205

ICE, COLLECTOR TO EMITTER CURRENT (A)

CE(PK)

VGE = 15V

= 480V

VGE = 10V

FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

200

100

VGE = 10V

TJ = 150oC, TC = 75oC

= 50Ω, L = 1mH

R

G

VGE = 15V

3000

TJ = 150oC, RG = 50Ω, L = 1mH, V

1000

500

, TURN-OFF ENERGY LOSS (µJ)

OFF

E

100

2 8 11 14 17 205

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE= 10V or 15V

CE(PK)

= 480V

FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

50

40

30

TJ = 150oC, VGE= 15V, RG= 50Ω, L = 1mH

f

= 0.05/(t

MAX1

10

f

= (PD - PC)/(EON + E

MAX2

= ALLOWABLE DISSIPATION

P

D

P

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

f

C

(DUTY FACTOR = 50%)

R

= 2.1oC/W

θJC

1

2102030

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 13. OPERATINGFREQUENCY vs COLLECTORTO

D(OFF)I

+ t

D(ON)I

OFF

)
)

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA

EMITTER CURRENT

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0 5 10 15 20 25

C

RES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C

FREQUENCY = 1MHz

IES

C

OES

600

500

400

300

200

100

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

0

0 100 200 300 400 500 600

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE(PK)

I

= 1.044mA, RL = 50Ω, TC = 25oC

G(REF)

VCE = 600V

VCE = 400V

VCE = 200V

0

510152025300

QG, GATE CHARGE (nC)

15

12.5

10

7.5

5

2.5

0

, GATE TO EMITTER VOLTAGE (V)

GE

V

FIGURE 15. CAPACITANCE vs COLLECTORTO EMITTER

VOLTAGE

5

FIGURE 16. GATE CHARGE WAVEFORMS

HGTD7N60C3S, HGTP7N60C3

Typical Performance Curves (Continued)

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

-2

10

10

0.01

SINGLE PULSE

-5

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

, NORMALIZED THERMAL RESPONSE

JC

θ

Z

FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE

Test Circuit and Waveform

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-2

10

t

1

P

2

X R

JC

θ

-1

10

) + T

JC

θ

D

t

C

0

10

2

1

10

RG = 50Ω

L = 1mH

RHRD660

V

GE

V

CE

+

V

= 480V

DD

-

I

CE

90%

t

d(OFF)I

10%

t

90%

10%

E

fI

OFF

E

ON

t

rI

t

d(ON)I

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS

6

HGTD7N60C3S, HGTP7N60C3

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerousequipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assemblyinto a circuit, allleads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.

2. When devices are removed by hand fromtheir carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from
circuits with power on.

5. Gate VoltageRating - Never exceedthe gate-voltage
rating of V
permanent damage to the oxidelayer in the gate region.

6. Gate Termination - Thegates of these devices are
essentially capacitors. Circuits that leave the gate open­circuited or floating should be avoided. Theseconditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Figure 13 is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operatingfrequency plot (Figure 13) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

D(OFF)I

and t

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowabledissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/R

D

The sum of device switching and conduction losses must
not exceedP
the conduction losses (P
P

=(VCExICE)/2. EON and E

C

. A 50% duty factorwas used (Figure 13) and

D

) are approximated by

C

switching waveforms shown in Figure 19. E
integral of the instantaneous power loss (I
turn-on and E
power loss (I

is the integral of the instantaneous

OFF

CExVCE

) during turn-off. All tail losses are
included in the calculation for E
current equals zero (I

CE

= 0).

) plots are possible using

CE

whichever is smaller at each

+ t

D(OFF)I

are defined in Figure 19.

D(ON)I

are defined in the

OFF

; i.e. the collector

OFF

D(ON)I

+ EON). The

OFF

ON

CExVCE

. t

JM

is the

).

D(OFF)I

θJC

) during

.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

7

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