Datasheet HGTP7N60B3, HGTD7N60B3S, HGT1S7N60B3S Datasheet (Intersil Corporation)

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Data Sheet January 2000

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between

o

25

C and 150oC.

The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power suppliesanddriv ersfor solenoids, relays and contactors.

Formerly Developmental Type TA49190.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD7N60B3S TO-252AA G7N60B
HGT1S7N60B3S TO-263AB G7N60B3

File Number 4412.2

Features

• 14A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC TO-220AB

E

C

COLLECTOR

(FLANGE)

JEDEC TO-263AB

= 150oC

J

G

HGTP7N60B3 TO-220AB G7N60B3

NOTE: When ordering,usethe entire part number.Add the suffix9A
to obtain the TO-252AAand TO-263AB variant in tape and reel, e.g.,
HGTD7N60B3S9A.

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

G

E

JEDEC TO-252AA

G

E

COLLECTOR
(FLANGE)

COLLECTOR
(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

14 A

7A

56 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

60 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-55 to 150
260

2 µs

12 µs

o

C

o

C

NOTES:

1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.

2. VCE = 360V, TJ = 125oC, RG = 50Ω.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CESIC
ECSIC

CES

= 250µA, VGE = 0V 600 - - V
= 3mA, VGE= 0V 15 28 - V

VCE = BV

CES

TC = 25oC - - 100 µA
TC = 150oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC

= I

,

C110

VGE = 15V

= 250µA, VCE = V

TC = 25oC - 1.8 2.1 V
TC = 150oC - 2.1 2.4 V

GE

3.0 5.1 6.0 V

VGE = ±20V - - ±100 nA

VCE= 480V 42 - - A
RG = 50Ω
VGE = 15V

VCE= 600V 35 - - A
L = 100µH

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

GEPIC

G(ON)IC

rI

fI
ON1
ON2
OFF

= I

, VCE = 0.5 BV

C110

= I

,

C110

VCE = 0. 5BV

CES

CES

VGE = 15V - 23 28 nC
VGE = 20V - 30 37 nC

IGBT and Diode Both at TJ = 25oC
ICE = I

, VCE = 0.8 BV

C110

CES

,
VGE = 15V, RG= 50Ω, L = 2mH
Test Circuit (Figure 17)

- 7.7 - V

-26-ns

-21-ns

- 130 160 ns

-6080ns

-72-µJ

- 160 200 µJ

- 120 200 µJ

2

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

ON1
ON2
OFF

θJC

IGBT and Diode Both at TJ = 150oC
ICE = I

rI

VGE = 15V, RG=50Ω, L = 2mH

, VCE = 0.8 BV

C110

Test Circuit (Figure 17)

fI

CES

-24-ns

,

-22-ns

- 230 295 ns

- 120 175 ns

-80-µJ

- 310 350 µJ

- 350 500 µJ

- - 2.1

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the Turn-On loss of the IGBT only. E

ON1

is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.

Typical Performance Curves Unless Otherwise Specified

o

C/W

ON2

16

14

12

10

8

6

4

, DC COLLECTOR CURRENT (A)

2

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

V

= 15V

GE

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ= 150oC, RG = 50Ω, VGE= 15V

200 3001000 400 500

600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Typical Performance Curves Unless Otherwise Specified (Continued)

400

TJ= 150oC, RG = 50Ω, L = 2mH, VCE = 480V

100

10

f

MAX1

f

MAX2

P

, OPERATING FREQUENCY (kHz)

MAX

f

C

R

ØJC

1

1

= 0.05 / (t
= (PD- PC) / (E

= CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

= 2.1oC/W, SEE NOTES

I

, COLLECTOR TO EMITTER CURRENT (V)

CE

d(OFF)I

+ t

ON2

32

d(ON)I

+ E

)

)

OFF

510

T

C

o

75

o

75

110oC

110oC

V

GE

C

15V

C

10V
15V
10V

15468

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

30

PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 10V

25

20

TC = -55oC

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

02468

1357

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

TC = 150oC

TC = 25oC

18

14

10

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

2

t

10 11 12 13 14 15

VCE = 360V, RG = 50Ω, TJ= 125oC

, GATE TO EMITTER VOLTAGE (V)

V

GE

I

SC

t

SC

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

TC = -55oC

PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V

046823 5 7

1

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TC = 150oC

TC = 25oC

100

80

60

40

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

20

FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE

1600

RG = 50Ω, L = 2mH, VCE = 480V

T

1200

, TURN-ON ENERGY LOSS (µJ)

ON2

E

= 150oC, VGE = 10V

J

TJ = 150oC, VGE = 15V

TJ = 25oC, VGE = 10V

800

TJ = 25oC, VGE = 15V

400

0

3 7 11 13

I

CE

951

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

15

1000

RG = 50Ω, L = 2mH, VCE = 480V

800

TJ = 150oC, VGE = 10V AND 15V

TJ = 25oC, VGE = 10V AND 15V

37 13

ICE, COLLECTOR TO EMITTER CURRENT (A)

11951

, TURN-OFF ENERGY LOSS (µJ)

OFF

E

600

400

200

0

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

4

15

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Typical Performance Curves Unless Otherwise Specified (Continued)

60

RG = 50Ω, L = 2mH, VCE = 480V

, TURN-ON DELAY TIME (ns)

dI

t

50

40

30

20

10

TJ = 150oC, VGE = 10V

TJ = 25oC, VGE = 10V

TJ = 25oC, VGE = 15V

TJ = 150oC, VGE = 15V

37 13

51 9 11 15

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAYTIME vs COLLECTOR TO

EMITTER CURRENT

250

200

TJ = 150oC, VGE = 15V

150

RG = 50Ω, L = 2mH, VCE = 480V

TJ = 150oC, VGE = 10V

140

RG = 50Ω, L = 2mH, VCE = 480V

120

100

TJ = 150oC, VGE = 10V

TJ = 25oC and 150oC, VGE= 15V

5 9 13 15

, RISE TIME (ns)

rI

t

80

TJ = 25oC, VGE= 10V

60

40

20

0

1

3711

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

120

RG = 50Ω, L = 2mH, VCE = 480V

100

TJ = 150oC, VGE = 10V and 15V

80

, TURN-OFF DELAY TIME (ns)

100

d(OFF)I

t

50

TJ = 25oC, VGE = 10V

5 9 13 15

3711

1

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 15V

FIGURE 11. TURN-OFF DELAYTIME vs COLLECTOR TO

EMITTER CURRENT

40

DUTY CYCLE = < 0.5%
PULSE DURATION = 250µs

= 10V

V

CE

32

24

16

T

= 150oC

C

8

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

814612

V

GE

T

= -55oC

C

10

, GATE TO EMITTER VOLTAGE (V)

TC = 25oC

, FALL TIME (ns)

fI

t

60

TJ = 25oC, VGE = 10V and 15V

40

1591315

3711

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 12. FALLTIME vs COLLECTOR TO EMITTER

CURRENT

15

I

= 0.758mA, RL = 86Ω, TC= 25oC

g(REF)

12

V

= 400V

CE

VCE = 600V

20

244

= 200V

V

9

6

3

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

012816 28

CE

QG, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

5

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Typical Performance Curves Unless Otherwise Specified (Continued)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

DUTY CYCLE - DESCENDING ORDER

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

θJC

-2

10

Z

-5

10

SINGLE PULSE

-4

10

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

C

0

0 5 10 15 20 25

C

OES

RES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

-3

10

t1, RECTANGULAR PULSE DURATION (s)

C

10

FREQUENCY = 1MHz

IES

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-2

θJC

t

1

P

D

2

X R

) + T

θJC

C

-1

10

t

2

0

10

1

10

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

L = 2mH

V

GE

V

CE

90%

I

CE

t

d(OFF)I

10%

t

RG = 50Ω

RHRD660

+

= 480V

V

DD

-

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS

6

90%

E

E

OFF

fI

ON2

10%

t

d(ON)I

t

rI

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturersin
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removedfrom
circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.

7. Gate Protection - These devices do not havean internal
monolithic Zener diode from gate to emitter. If gate
protection is requiredan external Zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown fora typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowabledissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/R

D

The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P

=(VCExICE)/2.

C

E

and E

ON2

shown in Figure 18. E
power loss (I

. A 50% duty factor was used (Figure 3) and

D

are defined in the switching waveforms

OFF

x VCE) during turn-on and E

CE

) are approximated by

C

is the integral of the instantaneous

ON2

integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for E
i.e., the collector current equals zero (I

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are defined in Figure 18.

. t

JM

d(OFF)I

OFF

OFF

x VCE) during

CE

= 0).

CE

+ E

ON2

is the

). The

θJC

OFF

.

;

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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7

ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.