Datasheet HGTD6N50E1S, HGTD6N50E1, HGTD6N40E1S, HGTD6N40E1 Datasheet (Intersil Corporation)
Page 1
HGTD6N40E1, HGTD6N40E1S,
HGTD6N50E1, HGTD6N50E1S
March 1997
Features
• 6A, 400V and 500V
•V
•T
CE(ON)
: 1.0µs
FALL
: 2.5V Max.
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and
HGTD6N50E1S are n-channel enhancement-mode insulated
gate bipolar transistors (IGBTs) designed for high voltage, low
on-dissipation applications such as switching regulators and
motor drivers. These types can be operated directly from low
power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTD6N40E1 TO-251AA G6N40E
HGTD6N50E1 TO-251AA G6N50E
HGTD6N40E1S TO-252AA G6N40E
HGTD6N50E1S TO-252AA G6N50E
NOTE: When ordering, use the entire part number.
6A, 400V and 500V N-Channel IGBTs
Packages
HGTD6N40E1, HGTD6N50E1
JEDEC TO-251AA
EMITTER
COLLECTOR
(FLANGE)
HGTD6N40E1S, HGTD6N50E1S
JEDEC TO-252AA
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 0.48 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
INTERSIL CORPORATION’S PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
1970
HGTD6N40E1
HGTD6N40E1S
CES
CGR
GE
C25
C90
D
STG
400 500 V
400 500 V
±20 ±20 V
7.5 7.5 A
6.0 6.0 A
60 60 W
-55 to +150 -55 to +150
HGTD6N50E1
HGTD6N50E1S UNITS
File Number
o
C
2413.4
Page 2
Specifications HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage V
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current I
Collector-Emitter On-Voltage V
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
W
x Frequency)
OFF
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
W
x Frequency)
OFF
Thermal Resistance Junction-toCase (IGBT)
BV
CESIC
GE(TH)VGE
I
CES
GES
CE(ON)TJ
GEP
G(ON)IC
D(ON)
R
D(OFF)
F
W
OFF
D(OFF)I
FI
W
OFF
R
θJC
LIMITS
HGTD6N40E1
HGTD6N40E1S
MIN MAX MIN MAX
HGTD6N50E1
HGTD6N50E1S
UNITS
= 250µA, VGE = 0V 400 - 500 - V
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
TJ = +150oC, VCE = 400V - 250 - - µA
TJ = +150oC, VCE = 500V - - - 250 µA
VGE = ±20V, VCE = 0V - 100 - 100 nA
= +150oC, IC = 3A, VGE = 10V - 2.9 - 2.9 V
TJ = +150oC, IC = 3A, VGE = 15V - 2.5 - 2.5 V
TJ = +25oC, IC = 3A, VGE = 10V - 2.5 - 2.5 V
TJ = +25oC, IC = 3A, VGE = 15V - 2.4 - 2.4 V
IC = 3A, VCE = 10V 6.5 (Typ) V
= 3A, VCE = 10V 6.9 (Typ) nC
Resistive Load, IC = 3A,
VCE = 400V, RL = 133Ω,
TJ = +150oC, VGE = 10V,
RG = 25Ω
90 (Typ) ns
32 (Typ) ns
24 (Typ) ns
1100 (Typ) ns
0.29 (Typ) mJ
Inductive Load (See Figure 11),
IC = 3A, V
CE(CLP)
= 400V,
RL = 133Ω, L = 50µH, TJ = +150oC,
VGE = 10V, RG = 25Ω
- 190 - 190 ns
-1-1µs
- 0.43 - 0.43 mJ
- 2.08 - 2.08
o
C/W
Typical Performance Curves
7.5
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
6.0
DUTY CYCLE < 2%
4.5
3.0
1.5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0.0
0246810
TC = +150oC
TC = +25oC
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
TC = -55oC
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
1971
7.5
VGE = 15V
6.0
4.5
3.0
1.5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0.0
0246810
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
VGE = 10V
= +25oC
C
VGE = 7.5V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
VGE = 5.5V
VGE = 5.0V
Page 3
HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
Typical Performance Curves
5
TJ = +150oC
4
3
2
, SATURATION VOLTAGE (V)
1
CE(ON)
V
0
110
ICE, COLLECTOR-EMITTER CURRENT (A)
(Continued)
VGE = 10V
VGE = 15V
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
500
f = 1MHz
400
300
12
10
8
6
4
2
, DC COLLECTOR CURRENT (A)
CE
I
0
+25 +50 +75 +100 +125 +150
VGE = 10V
T
, CASE TEMPERATURE (oC)
C
VGE = 15V
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
0.3
TJ +150oC, VGE = 15V, RG = 50Ω,
= 400V, L = 50µH
V
CE
0.2
200
C, CAPACITANCE (pF)
100
CRSS
0
0 5 10 15 20 25
COSS
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
1.5
TJ = +150oC, VGE = 10V
RG = 25Ω, L = 50µH
1.0
, FALL TIME (µs)
0.5
FI
t
0.0
110
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. FALL TIME vs COLLECT OR-TO-EMITTER CURRENT
(TYPICAL)
CISS
VCE = 400V
0.1
, TURN-OFF DELAY (µs)
D(OFF)I
t
0.0
110
, COLLECTOR-EMITTER CURRENT (A)
I
CE
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
10
TJ = +150oC, VGE = 10V
R
= 25Ω, L = 50µH
G
1.0
, TURN-OFF SWITCHING LOSS (mJ)
OFF
W
0.1
110
I
, COLLECTOR-EMITTER CURRENT (A)
CE
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
VCE = 400V
VCE = 200V
1972
Page 4
HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
Typical Performance Curves
1000
TJ = +150oC, TC = +100oC, VGE = 10V
= 25Ω, PT = 60W, L = 50µH
R
G
100
VCE = 400V
10
f
= (PD - PC)/W
MAX
PD = ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
P
, MAXIMUM OPERATING FREQUENCY (kHz)
OP
f
C
1
110
, COLLECTOR-EMITTER CURRENT (A)
I
CE
OFF
(Continued)
VCE = 200V
FIGURE 9. MAXIMUM OPERATING FREQ UENCY vs COLLECTOR
CURRENT AND VOLT AGE (TYPICAL)
Test Circuit
500
375
250
125
, COLLECTOR-EMITTER VOLTAGE (V)
CE
V
GATE-
EMITTER
VOLTAGE
VCC =
BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
COLLECTOR-EMITTER
0
I
G(REF)
20
I
G(ACT)
0.75 BV
0.50 BV
0.25 BV
VOLTAGE
TIME (µs)
RL = 166.7Ω
I
= 0.18mA
G(REF)
= 10V
V
GE
VCC =
BV
CES
CES
CES
80
CES
I
G(REF)
I
G(ACT)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
R
L
10
5
, GATE-EMITTER VOLTAGE (V)
GE
V
0
L = 50µH
1/R
= 1/R
G
20V
0V
+ 1/R
GEN
R
GEN
= 50Ω
GE
RGE = 50Ω
V
CC
400V
+
-
FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
1973
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