Datasheet HGTP3N60B3, HGTD3N60B3S, HGT1S3N60B3S Datasheet (Intersil Corporation)

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Data Sheet January 2000

7A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET
and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49192.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD3N60B3S TO-252AA G3N60B
HGT1S3N60B3S TO-263AB G3N60B3

File Number 4368.1

Features

• 7A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC TO-220AB

E

C

COLLECTOR

(FLANGE)

JEDEC TO-263AB

= 150oC

J

G

HGTP3N60B3 TO-220AB G3N60B3

NOTE: When ordering,usethe entirepart number. Add thesuffix 9A
to obtain theTO-252AA and TO-263AB variant in tape and reel, e.g.
HGTD3N60B3S9A.

G

E

COLLECTOR
(FLANGE)

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-252AA

G

E

COLLECTOR
(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTD3N60B3S, HGT1S3N60B3S

HGTP3N60B3 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

7.0 A

3.5 A
20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

33.3 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-55 to 150
260

5 µs

10 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 82Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

CE(SAT)IC

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 20 28 - V
VCE = BV

= I

C110

VGE = 15V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)

GES

IC = 250µA, VCE = V
VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC

RG = 82Ω
VGE = 15V

L = 500µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

g(ON)

IC = I

IC = I

C110
C110

VCE = 0.5 BV

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

rI

fI

ON

OFF

IGBT and Diode at TJ = 25oC

ICE = I

C110

VCE = 0.8 BV

VGE = 15V

RG = 82Ω

L = 1mH

Test Circuit (Figure 17)

CES

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

,

TC = 25oC - 1.8 2.1 V
TC = 150oC - 2.1 2.5 V

GE

VCE= 600V 18 - - A

, VCE = 0.5 BV
,

VGE = 15V - 18 22 nC

CES

VGE = 20V - 21 25 nC

CES

CES

4.5 5.4 6.0 V

- 7.9 - V

-18- ns

-16- ns

- 105 - ns

-70- ns

-6675µJ

- 88 160 µJ

2

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI

ON

OFF

θJC

IGBT and Diode at TJ = 150oC

ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V

RG = 82Ω

L = 1mH

Test Circuit (Figure 17)

-16- ns

-18- ns

- 220 295 ns

- 115 175 ns

- 130 140 µJ

- 210 325 µJ

- - 3.75

o

C/W

NOTE:

3. Turn-OffEnergy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.

Typical Performance Curves Unless Otherwise Specified

7

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

V

GE

= 15V

20

TJ= 150oC, RG = 82Ω, VGE= 15V, L = 500µH

18
16
14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

300 400200100 500 600

700

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

200

100

10

f

MAX1

f

MAX2

P

= CONDUCTION DISSIP ATION

, OPERATING FREQUENCY (kHz)
f

C

(DUTY FACTOR = 50%)

MAX

R

ØJC

1

1

TJ= 150oC, RG = 82Ω, L = 1mH, VCE= 480V

T

V

C

o

15V

C

75

o

75

C 10V

o

15V

C

110

10V

110oC

= 0.05/(t
= (PD- PC)/(EON + E

= 3.75oC/W, SEE NOTES

246

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

+ t

d(OFF)I

357

d(ON)I

OFF

)

)

GE

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

16

VCE = 360V, RG = 82Ω, TJ= 125oC

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

8

t

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

t

SC

SC

45

40

35

30

25

20

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

15

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Typical Performance Curves Unless Otherwise Specified (Continued)

14

DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

GE

= 10V

T

= 25oC

C

678910

TC = -55oC

TC = 150oC

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

01234

DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TC = -55oC

TC = 150oC

TC = 25oC

5678910

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

0.7
RG = 82Ω, L = 1mH, VCE = 480V

0.6

0.5

0.4

0.3

0.2

, TURN-ON ENERGY LOSS (mJ)

0.1

ON

E

0

I

CE

TJ = 25oC, TJ = 150oC, VGE = 10V

, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 150oC, VGE = 15V

7641

8523

0.6
RG = 82Ω, L = 1mH, VCE = 480V

0.5

TJ = 150oC; VGE = 10V OR 15V

0.4

0.3

0.2

, TURN-OFF ENERGY LOSS (mJ)

0.1

OFF

E

0

3571

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC; VGE = 10V OR 15V

8642

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

45

RG = 82Ω, L = 1mH, VCE = 480V

40

TJ = 25oC, TJ = 150oC, VGE = 10V

35

30

25

20

, TURN-ON DELAY TIME (ns)

dI

15

t

10

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, TJ = 150oC, VGE = 15V

42581

763

FIGURE 9. TURN-ON DELAYTIME vs COLLECTOR TO

EMITTER CURRENT

4

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

80

RG = 82Ω, L = 1mH, VCE = 480V

70

60

TJ = 25oC, TJ = 150oC, VGE= 10V

50

, RISE TIME (ns)

rI

t

40

30

20

10

2

3681

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 150oC, VGE= 15V

754

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Typical Performance Curves Unless Otherwise Specified (Continued)

250

225

200

175

150

125

T

, TURN-OFF DELAY TIME (ns)

d(OFF)I

t

J

100

TJ = 25oC, VGE = 10V

75

= 25oC, VGE = 15V

RG = 82Ω, L = 1mH, VCE = 480V

TJ = 150oC, VGE = 15V

T

= 150oC, VGE = 10V

J

2

ICE, COLLECTOR TO EMITTER CURRENT (A)

4681

753

FIGURE 11. TURN-OFF DELAYTIME vs COLLECTOR TO

EMITTER CURRENT

30

PULSE DURATION = 250µs

25

TC = -55oC

20

15

10

= 25oC

T

C

TC = 150oC

140

RG = 82Ω, L = 1mH, VCE = 480V

120

TJ = 150oC, VGE = 10V OR 15V

100

, FALL TIME (ns)

fI

t

80

60

24681

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 10V OR 15V

FIGURE 12. FALLTIME vs COLLECTOR TO EMITTER

CURRENT

15

I

= 1mA, RL = 171Ω, TC= 25oC

g(REF)

12

9

6

VCE = 200V

VCE = 400V

VCE = 600V

753

5

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

5789106

, GATE TO EMITTER VOLTAGE (V)

V

GE

11 12 13 14 15

3

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

01051525

Qg, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORM

500

400

C

300

200

C, CAPACITANCE (pF)

100

C

C

0

0 5 10 15 20 25

IES

OES

RES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FREQUENCY = 1MHz

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

20

5

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Typical Performance Curves Unless Otherwise Specified (Continued)

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

θJC

Z

10

-2

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-2

10

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveform

t

1

P

2

X R

JC

θ

10

) + T

JC

C

θ

-1

D

t

2

0

10

1

10

RG = 82Ω

L = 1mH

RHRD460

V

GE

V

CE

+

= 480V

V

DD

-

I

CE

90%

t

d(OFF)I

10%

t

90%

10%

E

E

OFF

fI

ON

t

d(ON)I

t

fI

FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS

6

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate­insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should neverbe inserted into or removed from
circuits with power on.

5. Gate VoltageRating - Never exceed the gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open­circuited or floating should be avoided. These conditions
can result in turn-on of the devicedue to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not havean internal
monolithic Zener diode from gate to emitter. If gate
protection is required an externalZener isrecommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowabledissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/R

D

The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P

=(VCExICE)/2.

C

EON and E
shown in Figure 18. E
power loss (I

. A 50% duty factor was used (Figure 3) and

D

C

are defined in the switching waveforms

OFF

x VCE) during turn-on and E

CE

is the integral of the instantaneous

ON

integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
E

; i.e., the collector current equals zero (ICE = 0).

OFF

) plots are possible using

CE

; whichever is smaller at each

+ t

d(OFF)I

are defined in Figure 18.

d(ON)I

d(ON)I

JM

+ EON). The

OFF

. t

) are approximated by

is the

OFF

x VCE) during

CE

).

d(OFF)I

θJC

.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

7

ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.