Datasheet HGTP3N60A4, HGTD3N60A4S Datasheet (Fairchild Semiconductor)

HGTD3N60A4S, HGTP3N60A4

Data Sheet August 2003

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S and the H GTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipol ar transis tors. Thes e devic es hav e the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on­state volta ge drop v aries o nly moder ately bet ween 2 5

o

150

C.

o

C and

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49327.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD3N60A4S TO-252AA 3N60A4
HGTP3N60A4 TO-220AB 3N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• >100kHz Operation at 390V, 3A

• 200kHz Operation at 390V, 2.5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

•12mJ E

Capability

AS

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Packaging

JEDEC TO-252AA

G

E

COLLECTOR

(FLANGE)

JEDEC TO-220AB

= 125oC

J

G

COLLECTOR

(FLANGE)

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

E

C

G

HGTD3N60A4S, HGTP3N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltag e. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At T

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Single Pulse Avalanche Energy at T
Power Dissipation Total at T
Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . .SSOA 15A at 600V

J

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

C

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.56 W/oC

C

Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

CM

GES

GEM

AS

D

, T

J

STG

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

17 A

8A

40 A

±20 V
±30 V

12mJ at 3A

70 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Pulsed Avalanche Energy E
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

AS

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V

= 0V 20 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--2.0mA

J

= 3A,

V

GE

= 15V

T

= 25oC-2.02.7V

J

T

= 125oC-1.62.2V

J

IC = 250µA, VCE = 600V 4.5 6.1 7.0 V
VGE = ±20V - - ±250 nA

= 150oC, RG = 50Ω, VGE = 15V

J

L = 200µH, V

CE

= 600V

15 - - A

ICE = 3A, L = 2.7mH 12 - - mJ
IC = 3A, VCE = 300V - 8.8 - V
IC = 3A,

V

= 300V

CE

IGBT and Diode at TJ = 25oC

= 3A

I

CE

= 390V

V

CE

V

= 15V

GE

= 50Ω

R

G

L = 1mH
Test Circuit - Figure 20

= 15V - 21 25 nC

V

GE

V

= 20V - 26 32 nC

GE

-6-ns

-11- ns

-73- ns

-47- ns

-37- µJ

-5570µJ

-2535µJ

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

HGTD3N60A4S, HGTP3N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
I

= 3A

CE

= 390V

V

CE

= 15V

V

GE

R

= 50Ω

G

L = 1mH
Test Circuit - Figure 20

NOTES:

2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

Typical Performance Curves Unless Otherwise Specified

20

16

V

= 15V

GE

20

TJ = 150oC, RG = 50Ω, V

16

-5.58 ns

-1215ns

- 110 165 ns

- 70 100 ns

-37- µJ

- 90 100 µJ

-5080µJ

--1.8oC/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 200µH

GE

ON2

12

8

4

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

600

300

200

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

100

P

= CONDUCTION DISSIPATION

C

, OPERATING FREQUENCY (kHz)

MAX

f

50

(DUTY FACTOR = 50%)
= 1.8oC/W, SEE NOTES

R

ØJC

TJ = 125oC, RG = 50Ω, L = 1mH, V

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

ON2

+ t

d(ON)I

+ E

OFF

)

)

= 390V

CE

TCV

o

C

75

GE

15V

54

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20 64

VCE = 390V, RG = 50Ω, TJ = 125oC

t

SC

16

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

623

t

10 11 12 15

, GATE TO EMITTER V OLTAGE (V)

V

GE

I

SC

13 14

5618

48

40

32

24

16

8

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

0

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

HGTD3N60A4S, HGTP3N60A4

Typical Performance Curves Unless Otherwise Specified (Continued)

20

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

023

1
, COLLECTOR TO EMITTER VO LTAGE (V)

V

CE

= 12V

GE

TJ = 125oC

TJ = 25oC

TJ = 150oC

45

20

DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

02341

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 125oC

TJ = 150oC

TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STA TE VOLTAGE

240

RG = 50Ω, L = 1m H, VCE = 390V

200

160

120

80

, TURN-ON ENERGY LOSS (µJ)

40

ON2

E

TJ = 125oC, VGE = 12V, VGE = 15V

0

1

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, VGE = 12V, VGE = 15V

32456

140

RG = 50Ω, L = 1mH, VCE = 390V

120

100

80

TJ = 125oC, VGE = 12V OR 15V

60

40

, TURN-OFF ENERGY LOSS (µJ)

20

OFF

E

0

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 12V OR 15V

324561

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

16

RG = 50Ω, L = 1mH, VCE = 390V

12

TJ = 25oC, TJ = 125oC, VGE = 12V

8

4

, TURN-ON DELAY TIME (ns)

d(ON)I

t

0

1

1

2

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 125oC, VGE = 15V

3456

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR T O

EMITTER CURRENT

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR T O

EMITTER CURRENT

32

RG = 50Ω, L = 1mH, VCE = 390V

28

24

TJ = 25oC OR TJ = 125oC, V

20

16

, RISE TIME (ns)

rI

t

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC OR TJ = 125oC, V

324561

GE

= 12V

GE

= 15V

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

HGTD3N60A4S, HGTP3N60A4

Typical Performance Curves Unless Otherwise Specified (Continued)

112

104

96

88

80

72

, TURN-OFF DELAY TIME (ns)

64

56

d(OFF)I

t

48

RG = 50Ω, L = 1mH,

213456

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

V

CE

VGE = 15V, TJ = 125oC

VGE = 12V, TJ = 125oC

V

VGE = 12V, TJ = 25oC

= 390V

= 15V, TJ = 25oC

GE

FIGURE 11. TURN-OFF DELA Y TIME vs COLLECT OR T O

EMITTER CURRENT

20

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

46810 14

TJ = 25oC

TJ = 125oC

V

, GATE TO EMITTER VOLTAGE (V)

GE

CE

= 10V

TJ = -55oC

12

96

RG = 50Ω, L = 1mH, VCE = 390V

88

80

72

64

, FALL TIME (ns )

fI

t

56

48

40

21 3456

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

FIGURE 12. FALL TIME vs COLL ECT OR T O EMITTER

CURRENT

16

I

= 1mA, RL = 100Ω, TJ = 25oC

G(REF)

14

12

10

8

6

4

, GATE TO EMITTER VOLTAGE (V)

2

GE

V

0

VCE = 600V

VCE = 400VVCE = 200V

4 8 12 16 2420 280

QG, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

250

RG = 50Ω, L = 1mH, VCE = 390V, VGE = 15V

= E

E

TOTAL

200

ICE = 4.5A

150

ICE = 3A

100

ICE = 1.5A

50

, TOTAL SWITCHING ENERGY LOSS (µJ)

0

TOTAL

E

+ E

ON2

OFF

50 75 100

, CASE TEMPERATURE (oC)

T

C

FIGURE 15. TOTAL SWITCHING LOSS vs CASE

12525 150

1000

TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V

E

= E

TOTAL

100

, TOTAL SWITCHING ENERGY LOSS (µJ)

30

TOTAL

31000

E

+ E

ON2

OFF

ICE = 4.5A

ICE = 3A

ICE = 1.5A

10 100

R

, GATE RESISTANCE (Ω)

G

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

TEMPERATURE

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

HGTD3N60A4S, HGTP3N60A4

Typical Performance Curves Unless Otherwise Specified (Continued)

700

FREQUENCY = 1MHz

600

500

400

C

IES

300

C

C

RES

OES

200

C, CAPACITANCE (pF)

100

0

0 20406080100

VCE, COLLECTOR TO EMITTER VOL TAGE (V)

FIGURE 17. CAPA CITANCE vs COLLECTOR T O EMITTER

VOLTAGE

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

-2

10

, NORMALIZED THERMAL RESPONSE

qJC

Z

-5

10

SINGLE PULSE

-4

10

t1, RECTANGULAR PULSE DURATION (s)

2.7

2.6

DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs,

2.5

2.4

2.3

ICE = 4.5A

ICE = 3A

2.2

2.1

2.0
8

ICE = 1.5A

10 12

14 16

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 18. COLLECTOR T O EMITTER ON-STATE V OLTA GE

vs GATE TO EMITTER VOLTAGE

t

1

P

D

t

2

DUTY FACTOR, D = t1 / t

PEAK TJ = (PD X Z

-3

10

-2

10

-1

10

qJC

X R

2

) + T

qJC

C

0

10

FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

Test Circuit and Waveforms

HGTD3N60A4S, HGTP3N60A4

HGTP3N60A4D
DIODE TA49369

L = 1mH

RG = 50Ω

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS

DUT

+

-

VDD = 390V

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate­insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discha rged through th e
device. With proper han dli ng and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly int o a circ uit, all l ead s should be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are rem ov ed b y hand from their carriers ,
the hand being used should be grounde d b y any su itab le
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.

5. Gate V olta ge Rating - Nev er e xceed the gate-v oltag e
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termin ation - The gates of thes e de vices are
essentially capacitors. Circuits that leave the gate open­circuited or floating shoul d be a v oide d. Thes e condi tions
can result in turn-on of the device due to voltage build up
on the input capacitor due to leakage currents or pickup.

. Exceeding the rated VGE can result in

GEM

V

GE

I

CE

V

CE

t

d(OFF)I

90%

E

OFF

90%

10%

t

fI

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the deno minator) ha s been a rbitra rily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T

f

is defined by f

MAX2

allowable dissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD = (TJM - TC)/R

D

The sum of device switching and conduction losses must not
exceed P
conduction losses (P
I

CE

E

ON2

shown in Figure 21. E

. A 50% duty factor was used (Figure 3) and the

D

) are approximated b y PC = (VCE x

C

)/2.

and E

are defined in the switching waveforms

OFF

is the integral of the

ON2

instantaneous power loss (I
E

is the integral of the instantan eou s po wer loss (ICE x

OFF

V

) during turn-off. All tail losses are included in the

CE

calculation for E
(I

= 0).

CE

; i.e., the collector current equals zero

OFF

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

are defined in Figure 21.

x VCE) during turn-on and

CE

7. Gate Protection - These de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.

OFF

+ t

10%

E

ON2

d(ON)I

JM

+ E

t

d(ON)I

.

ON2

t

rI

).

). The

I

CE

θJC

.

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

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1. Life support devices or systems are devices or syst em s
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5