Datasheet HGTP2N120CN, HGTD2N120CNS Datasheet (Intersil Corporation)

HGTD2N120CNS, HGTP2N120CN,

HGT1S2N120CNS

Data Sheet January 2000

13A, 1200V, NPT Series N-Channel IGBT

The HGTD2N120CNS, HGTP2N120CN, and
HGT1S2N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49313.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP2N120CN TO-220AB 2N120CN
HGTD2N120CNS TO-252AA 2N120C
HGT1S2N120CNS TO-263AB 2N120CN

NOTE: When ordering,use theentirepart number. Addthe suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120CNS9A.

File Number 4680.2

Features

• 13A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

E

COLLECTOR

(FLANGE)

C

= 150oC

J

G

Symbol

C

G

E

G

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

G

E

E

JEDEC TO-252AA

COLLECTOR
(FLANGE)

JEDEC TO-263AB

COLLECTOR
(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTD2N120CNS

HGTP2N120CN,

HGT1S2N120CNS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

13 A

7A

20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 13A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

104 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AV

STG

18 mJ

-55 to 150

o

C
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC

300
260

8 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE= 3A, L = 4mH.

3. V

= 840V, TJ = 125oC, RG = 51Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

CES

TC = 25oC - - 100 µA
TC = 125oC - 100 - µA
TC = 150oC - - 1.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 2.6A,

VGE = 15V

IC = 45µA, VCE = V

TC = 25oC - 2.05 2.40 V
TC = 150oC - 2.75 3.50 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

L = 5mH, V
IC = 2.6A, VCE = 0.5 BV
IC = 2.6A,

VCE = 0.5 BV

CE(PK)

CES

= 1200V

CES

VGE = 15V - 30 36 nC
VGE = 20V - 36 43 nC

6.4 6.7 - V

13 - - A

- 10.2 - V

2

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 25oC
ICE = 2.6A
VCE = 0.8 BV

CES

VGE = 15V
RG= 51Ω
L = 5mH
Test Circuit (Figure 18)

IGBT and Diode at TJ = 150oC,
ICE = 2.6A,
VCE = 0.8 BV

CES

,
VGE = 15V,
RG= 51Ω,
L = 5mH,
Test Circuit (Figure 18)

-2530ns

-1115ns

- 205 220 ns

- 260 320 ns

-96- µJ

- 425 590 µJ

- 355 390 µJ

-2125ns

-1115ns

- 225 240 ns

- 360 420 ns

-96- µJ

- 800 1100 µJ

- 530 580 µJ

- - 1.20

NOTES:

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.

5. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous powerloss starting atthe trailing edgeof the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

o

C/W

ON2

Typical Performance Curves Unless Otherwise Specified

14

12

10

8

6

4

, DC COLLECTOR CURRENT (A)

2

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

VGE= 15V

16

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 5mH

14

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Typical Performance Curves Unless Otherwise Specified (Continued)

200

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 5mH

T

= 75oC,VGE = 15V

100

, OPERATING FREQUENCY (kHz)

MAX

f

C

IDEAL DIODE

50

f

= 0.05 / (t

MAX1

= (PD- PC) / (E

f

MAX2

= CONDUCTION DISSIPATION

P

C

10

(DUTY FACTOR = 50%)

R

= 1.2oC/W, SEE NOTES

ØJC

1342

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

)

T

C

110

110

T

V

C

GE

o

15V

75

C

12V

75oC

V

GE

o

15V

C

o

12V

C

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

10

8

TC = 25oC

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012

TC = -55oC

TC = 150oC

DUTY CYCLE <0.5%, V
250µS PULSE TEST

345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

GE

= 12V

50

VCE = 840V, RG = 51Ω, TJ= 125oC

40

30

20

I

SC

10

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

0

t

5

10 14 15131211

VGE, GATE TO EMITTER VOLTAGE (V)

50

40

30

20

t

SC

10

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

0

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

10

DUTY CYCLE <0.5%, VGE = 15V
250µs PULSE TEST

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

6

I

012345

TC = -55oC

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TC = 25oC

TC = 150oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

2000

RG = 51Ω, L = 5mH, VCE = 960V

1500

TJ = 150oC, VGE = 12V, VGE = 15V

1000

500

, TURN-ON ENERGY LOSS (µJ)

ON2

E

0

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, VGE = 12V, VGE = 15V

2.51.5 3.53.02.01.0 4.0 4.5 5.0

FIGURE 7. TURN-ON ENERGYLOSS vs COLLECTORTO

EMITTER CURRENT

900

RG = 51Ω, L = 5mH, VCE = 960V

800

700

TJ = 150oC, VGE = 12V OR 15V

600

500

, TURN-OFF ENERGY LOSS (µJ)

OFF

E

400

300

200

100

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 12V OR 15V

3.02.01.5 2.5 3.51.0

4.54.0

FIGURE 8. TURN-OFF ENERGYLOSS vs COLLECTORTO

EMITTER CURRENT

4

5.0

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Typical Performance Curves Unless Otherwise Specified (Continued)

45

RG = 51Ω, L = 5mH, VCE = 960V

40

35

, TURN-ON DELAY TIME (ns)

dI

t

30

25

20

15

1.51.0 2.0 3.0

TJ = 25oC, TJ = 150oC, VGE = 12V

TJ = 25oC, TJ = 150oC, VGE = 15V

2.5 3.5 4.54.0 5.0

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

400

RG = 51Ω, L = 5mH, VCE = 960V

350

VGE = 12V, VGE = 15V, TJ = 150oC

300

40

RG = 51Ω, L = 5mH, VCE = 960V

35

TJ = 25oC, TJ = 150oC, VGE= 12V

25

20

15

, RISE TIME (ns)

rI

t

10

5

0

TJ = 25oC, TJ = 150oC, VGE= 15V

2.01.0301.5 3.53.02.5

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

FIGURE 10. TURN-ON RISE TIME vs COLLECTORTO

EMITTER CURRENT

700

RG = 51Ω, L = 5mH, VCE = 960V

600

500

TJ = 150oC, VGE = 12V OR 15V

5.04.54.0

250

200

, TURN-OFF DELAY TIME (ns)

150

VGE = 12V, VGE = 15V, TJ = 25oC

d(OFF)I

t

100

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

40

DUTY CYCLE <0.5%, V

35

250µS PULSE TEST

30

25

20

15

10

TC = 25oC

5

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

TC = -55oC

VGE, GATE TO EMITTER VOLTAGE (V)

= 20V

CE

TC = 150oC

11

1378910 12

14 15

5.0

400

, FALL TIME (ns)

300

fI

t

200

TJ = 25oC, VGE = 12V OR 15V

100

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 12. FALLTIME vs COLLECTORTOEMITTER

CURRENT

16

I

= 1mA, RL = 260Ω, TC = 25oC

G(REF)

14

12

10

8

6

4

, GATE TO EMITTER VOLTAGE (V)

2

GE

V

0

VCE = 1200V

VCE = 400V

QG, GATE CHARGE (nC)

V

CE

151050

= 800V

302520

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

5

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Typical Performance Curves Unless Otherwise Specified (Continued)

2.0
FREQUENCY = 1MHz

1.5

C

IES

1.0

C, CAPACITANCE (nF)

0.5

C

OES

C

RES

0

0 5 10 15 20 25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

, NORMALIZED THERMAL RESPONSE

0.01

θJC

-2

10

Z

-5

10

SINGLE PULSE

10

-4

t1, RECTANGULAR PULSE DURATION (s)

5

DUTY CYCLE <0.5%, TC = 110oC
250µs PULSE TEST

4

VGE = 15V

3

VGE = 10V

2

1

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE

t

1

P

D

t

DUTY FACTOR, D = t1 / t

PEAK TJ = (PDX Z

-3

10

-2

10

θJC

2

2

X R

) + T

θJC

C

-1

10

0

10

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

RHRD4120

90%

V

GE

RG = 51Ω

L = 5mH

V

CE

90%

+

= 960V

V

DD

-

I

CE

t

d(OFF)I

10%

E

t

fI

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS

6

OFF

E

ON2

10%

t

d(ON)I

t

rI

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerousequipment manufacturersin
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be groundedby anysuitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from
circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination- The gatesof these devicesare
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.

7. Gate Protection- Thesedevices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required, an external Zener is
recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device (Figure

3) is presented as a guide forestimating deviceperformance
fora specific application. Other typical frequency vs collector
current (I
fora typical unitin Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows f
f

MAX2

based on measurements of a typical device and is bounded
by the maximum rated junction temperature.

f

MAX1

Deadtime (the denominator) hasbeen arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

MAX2

allowable dissipation (P
The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P

=(VCEx ICE)/2.

C

E

ON2

shown in Figure 19. E
instantaneous power loss (I
E

OFF

(I

CExVCE

the calculation for E
zero (I

) plots are possible using the information shown

CE

MAX1

; whichever is smaller ateach point. The information is

is defined by f

d(OFF)I

is defined by f

. A 50% duty factor was used (Figure 3) and

D

and E

are defined in the switching waveforms

OFF

= 0.05/(t

MAX1

and t

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/RθJC.

D

C

ON2

are defined in Figure 19.

d(ON)I

) are approximated by

is the integral of the

x VCE) during turn-on and

CE

d(OFF)I

OFF

+ t

+ E

d(ON)I

JM

ON2

).

. t

d(OFF)I

). The

is the integral of the instantaneous power loss

) during turn-off. All tail losses are included in

; i.e., the collector current equals

OFF

CE

= 0).

or

7

ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.