Datasheet HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Datasheet (Intersil Corporation)

HGTP2N120BN, HGTD2N120BNS,

HGT1S2N120BNS

Data Sheet January 2000

12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and
HGT1S2N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49312.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP2N120BN TO-220AB 2N120BN
HGTD2N120BNS TO-252AA 2N120BN
HGT1S2N120BNS TO-263AB 2N120BN

NOTE: When ordering,use theentirepart number. Addthesuffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120BNS9A.

File Number 4696.2

Features

• 12A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

E

= 150oC

J

C

G

Symbol

C

JEDEC TO-252AA

G

G

E

E

JEDEC TO-263AB

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP2N120BN,

HGTD2N120BNS

HGT1S2N120BNS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM
GES
GEM

12 A

5.6 A
20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 12A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

104 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AV

STG

18 mJ

-55 to 150

o

C
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE= 3A, L = 4mH, TJ = 25oC.

3. V

= 840V, TJ = 125oC, RG = 51Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 40 - µA
TC = 150oC - - 0.5 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 2.3A,

VGE = 15V
IC = 20µA, VCE = V

TC = 25oC - 2.45 2.7 V
TC = 150oC - 3.6 4.2 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E

GEP

G(ON)

rI

fI
ON1
ON2
OFF

L = 400µH, V
IC = 2.3A, VCE = 0.5 BV
IC = 2.3A,

VCE = 0.5 BV
IGBT and Diode at TJ = 25oC

ICE = 2.3A
VCE = 0.8 BV
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)

CE(PK)

CES

CES

= 1200V

CES

VGE = 15V - 24 30 nC
VGE = 20V - 32 39 nC

6.0 6.8 - V

12 - - A

- 10.2 - V

-2125ns

-1115ns

- 185 240 ns

- 100 130 ns

-83- µJ

- 370 500 µJ

- 195 270 µJ

2

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
ICE = 2.3A
VCE = 0.8 BV

CES

VGE = 15V
RG= 51Ω
L = 5mH
Test Circuit (Figure 18)

-2530ns

-1115ns

- 195 260 ns

- 160 200 ns

-83- µJ

- 725 1000 µJ

- 280 380 µJ

- - 1.2

NOTES:

4. Valuesfor two Turn-On loss conditions are shown forthe convenience of the circuit designer.E

is the turn-on loss of the IGBT only. E

ON1

ON2

turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.

5. Turn-OffEnergy Loss (E

) is defined as the integral ofthe instantaneous powerloss starting atthe trailing edgeof the input pulse and ending

OFF

at the point where the collector current equalszero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

12

V

10

8

6

4

, DC COLLECTOR CURRENT (A)

2

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

GE

= 15V

14

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 1mH

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

o

C/W

is the

1400

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

TJ= 150oC, RG = 51Ω, L = 5mH, VCE= 960V

100

50

f

MAX1

f

MAX2

, OPERATING FREQUENCY (kHz)

P

MAX

f

R

10

0.5

TC = 75oC, VGE = 15V, IDEAL DIODE

= 0.05 / (t
= (PD- PC) / (E

= CONDUCTION DISSIPATION

C

(DUTY FACTOR = 50%)

= 1.2oC/W, SEE NOTES

ØJC

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

1.0

ON2

+ t

d(ON)I

+ E

OFF

)

)

110oC
110

T

C

o

C

V

15V
12V

GE

T

V

C

o

15V

C

75

o

12V

75

C

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

GE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

25

VCE = 840V, RG = 51Ω, TJ= 125oC

20

15

10

, SHORT CIRCUIT WITHSTAND TIME (µs)

5

SC

t

5.02.0

12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

t

SC I

SC

40

35

30

25

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

20

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Typical Performance Curves Unless Otherwise Specified (Continued)

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

01 3

TC = -55oC

24

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TC = 25oC

TC = 150oC

DUTY CYCLE < 0.5%, V
250µs PULSE TEST

567

GE

= 12V

10

TC = -55oC

8

6

4

2

DUTY CYCLE < 0.5%, VGE = 15V

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

01234 7

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

250

TC = 25oC

µ

s PULSE TEST

TC = 150oC

56

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

2.0
RG = 51Ω, L = 5mH, VCE = 960V

1.5

TJ = 150oC, VGE = 12V, VGE = 15V

1.0

0.5

, TURN-ON ENERGY LOSS (mJ)

ON2

E

0

10
, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, VGE = 12V, VGE = 15V
2

3

45

400

RG = 51Ω, L = 5mH, VCE = 960V

350

300

TJ = 150oC, VGE = 12V OR 15V

250

200
150

100

, TURN-OFF ENERGY LOSS (mJ)

50

OFF

E

0

10

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

2

TJ = 25oC, VGE = 12V OR 15V

3

45

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTORTO

EMITTER CURRENT

45

RG = 51Ω, L = 5mH, VCE = 960V

40

TJ = 25oC, TJ = 150oC, VGE = 12V

35

30

25

, TURN-ON DELAY TIME (ns)

20

dI

t

15

0

1

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, TJ = 150oC, VGE = 15V

2

3

45

FIGURE 9. TURN-ON DELAY TIME vs COLLECTORTO

EMITTER CURRENT

4

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTORTO

EMITTER CURRENT

40

RG = 51Ω, L = 5mH, VCE = 960V

35

TJ = 25oC, TJ = 150oC, VGE= 12V

TJ = 25oC OR TJ = 150oC, VGE= 15V

2

ICE, COLLECTOR TO EMITTER CURRENT (A)

40315

, RISE TIME (ns)

rI

t

30

25

20

15

10

5

0

FIGURE 10. TURN-ON RISE TIME vs COLLECTORTO

EMITTER CURRENT

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Typical Performance Curves Unless Otherwise Specified (Continued)

450

400

350

300

250

200

, TURN-OFF DELAY TIME (ns)

150

d(OFF)I

t

100

VGE = 12V, VGE = 15V, TJ = 25oC

0

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

RG = 51Ω, L = 5mH, VCE = 960V

VGE = 12V, VGE = 15V, TJ = 150oC

2

4

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTORTO

EMITTER CURRENT

30

DUTY CYCLE < 0.5%, V
250µs PULSE TEST

25

20

CE

= 20V

400

RG = 51Ω, L = 5mH, VCE = 960V

350

300

250

200

, FALL TIME (ns)

fI

t

150

100

TJ = 25oC, VGE = 12V OR 15V

50

53

0

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 150oC, VGE = 12V OR 15V

1

2

543

FIGURE 12. FALLTIME vs COLLECTORTO EMITTER

CURRENT

20

I

= 1mA, RL = 260Ω, TC = 25oC

G(REF)

15

VCE = 1200V

15

10

5

0

7

TC = 150oC

VGE, GATE TO EMITTER VOLTAGE (V)

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

TC = 25oC

TC = -55oC

11

14 15

138 9 10 12

10

VCE = 400V

5

, GATE TO EMITTER VOLTAGE (V)

GE

V

0

020525

QG, GATE CHARGE (nC)

VCE = 800V

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

0.8
FREQUENCY = 1MHz

0.6

C

IES

0.4

C, CAPACITANCE (nF)

0.2

C

RES

0

0 5 10 15 20 25

C

OES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

3.0
DUTY CYCLE < 0.5%, TC = 110oC

250µs PULSE TEST

2.5

2.0

1.5

1.0

0.5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0 1.0

0.5 1.5 2.5 3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VGE = 15V

2.0

3010 15

VGE = 10V

3.0 4.0

35

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VOLTAGE

5

FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Typical Performance Curves Unless Otherwise Specified (Continued)

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

JC

θ

0.01

-5

SINGLE PULSE

-4

10

-2

10

10

, NORMALIZED THERMAL RESPONSE
Z

DUTY FACTOR, D = t1 / t

PEAK TJ = (PDX Z

-3

10

t

, RECTANGULAR PULSE DURATION (s)

1

θJC

2

X R

10

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

θJC

t

1

P

) + T

C

-2

D

t

2

-1

10

0

10

HGTP2N120BND

90%

E

ON2

10%

t

d(ON)I

t

rI

RG = 51Ω

L = 5mH

V

GE

E

V

CE

90%

+

= 960V

V

DD

-

I

CE

t

d(OFF)I

10%

OFF

t

fI

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS

6

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerousequipment manufacturersin
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,
the hand being used should be groundedby anysuitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from
circuits with power on.

5. Gate Voltage Rating - Never exceedthe gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination- The gatesof these devicesare
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.

7. Gate Protection- Thesedevices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is requiredan external Zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown fora typicalunit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the denominator) hasbeen arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowabledissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/R

D

The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P

=(VCExICE)/2.

C

E

and E

ON2

shown in Figure 19. E

. A 50% duty factor was used (Figure 3) and

D

are defined in the switching waveforms

OFF

) are approximated by

C

is the integral of the

ON2

instantaneous power loss (I
E

is the integral of the instantaneous power loss

OFF

(I

CExVCE

calculation for E
(I

CE

) during turn-off. All tail losses are included in the

; i.e., the collector current equals zero

OFF

= 0).

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are defined in Figure 19.

. t

JM

d(OFF)I

+ E

OFF

x VCE) during turn-on and

CE

ON2

). The

θJC

.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

7

ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.