Datasheet HGTD1N120BNS Datasheet (Fairchild Semiconductor)

E

C

G

COLLECTOR

(FLANGE)

E

COLLECTOR

(FLANGE)

G

T

HGTD1N120BNS, HGTP1N120BN

Data Sheet January 2001

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are N on- P unch

hrough (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49316.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD1N120BNS TO-252AA 1N120B

HGTP1N120BN TO-220AB 1N120BN

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A

Features

• 5.3A, 1200V, T

• 1200V Switching SOA Capability

• Typical E

OFF

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Temperature Compensating SABER™ Model

Thermal Impedance SPICE Model

www.fairchildsemi.com

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

o

= 25

C

. . . . . . . . . . . . . . . . . . 120 µ J at T

Packaging

JEDEC TO-220AB

= 150

J

o

C

Symbol

C

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-252AA

±

8 µ

13 µ

µ

±

HGTD1N120BNS, HGTP1N120BN

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Speciﬁed

C

ALL TYPES UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At T

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T

Power Dissipation Total at T

Power Dissipation Derating T

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

o

= 110

C

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

o

= 150

C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V

J

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

o

> 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/

C

C25

C110

CM

GES

GEM

D

AV

, T

J

STG

5.3 A

2.7 A

6A

20 V

30 V

60 W

o

C

10 mJ

-55 to 150

o

C

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

L

pkg

SC

300

260

o

C

o

C

s

NOTES:

1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.

2. I

= 7A, L = 400 µ H, V

CE

3. V

CE(PK)

= 840V, T

= 125

J

= 15V, T

GE

o

C, R

G

= 25

J

= 82 Ω.

o

C.

o

T

= 25

Electrical Speciﬁcations

C, Unless Otherwise Speciﬁed

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV

Emitter to Collector Breakdown Voltage BV

Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

CES

ECS

CES

CE(SAT)

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V

On-State Gate Charge Q

GEP

G(ON)

I

= 250 µ A, V

C

I

= 10mA, V

C

V

= 1200V T

CE

I

= 1.0A

C

V

= 15V

GE

I

= 50 µ A, V

C

V

= ± 20V - -

GE

= 150

J

L = 2mH, V

I

= 1.0A, V

C

I

= 1.0A

C

V

= 600V

CE

= 0V 1200 - - V

GE

= 0V 15 - - V

GE

o

= 25

C - - 250

C

T

= V

CE

GE

o

C, R

= 82 Ω, V

G

= 1200V

CE(PK)

= 600V - 9.2 - V

CE

V

o

= 125

C

C - 20 -

o

= 150

C - - 1.0 mA

o

= 25

C - 2.5 2.9 V

o

= 150

C - 3.8 4.3 V

6.0 7.1 - V

= 15V,

GE

= 15V - 14 20 nC

GE

= 20V - 15 21 nC

GE

6- - A

A

250 nA

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

1400

3

0

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

1

2

600 800400200 1000 1200

0

4

6

5

7

TJ = 150oC, RG = 82Ω, V

GE

= 15V, L = 2mH

HGTD1N120BNS, HGTP1N120BN

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t

Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t

Turn-On Energy (Note 5) E

Turn-Off Energy (Note 4) E

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t

Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t

Turn-On Energy (Note 5) E

Turn-Off Energy (Note 4) E

Thermal Resistance Junction To Case R

rI

fI

ON1

ON2

OFF

rI

fI

ON1

ON2

OFF

θJC

IGBT and Diode at T I

= 1.0A

CE

V

= 960V

CE

V

= 15V

GE

R

= 82 Ω

G

L = 4mH Test Circuit (Figure 18)

IGBT and Diode at T I

= 1.0 A

CE

V

= 960V

CE

V

= 15V

GE

R

= 82 Ω

G

L = 4mH Test Circuit (Figure 18)

= 25

J

= 150

J

o

C

-1520ns

-1114ns

-6776ns

- 226 300 ns

-70 - µJ

- 172 187 µJ

- 90 123 µJ

o

C

-1317ns

-1115ns

-7588ns

- 258 370 ns

- 145 - µJ

- 385 440 µJ

- 120 175 µJ

- - 2.1

NOTES:

4. Turn-Off Energy Loss (E

) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.

o

C/W

ON2

is

Typical Performance Curves (Unless Otherwise Speciﬁed)

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 75 100 125 150

FIGURE 1. DC COLLECTOR CURRENT vs CASE

50

TC, CASE TEMPERATURE (oC)

TEMPERATURE

V

= 15V

GE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

2

3

4

0246810

1

6

0

5

DUTY CYCLE < 0.5%, VGE = 15V

PULSE DURATION = 250µs

TC = -55oC TC = 150oC

T

C

= 25oC

ICE, COLLECTOR TO EMITTER CURRENT (A)

E

OFF

, TURN-OFF ENERGY LOSS (µJ)

0

1 1.5

2

0.5

50

150

100

200

250

2.5 3

TJ = 150oC, VGE = 13V OR 15V

TJ = 25oC, VGE = 13V OR 15V

RG = 82Ω, L = 4mH, VCE = 960V

HGTD1N120BNS, HGTP1N120BN

Typical Performance Curves (Unless Otherwise Speciﬁed) (Continued)

300

TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V

200

TC = 75oC, VGE = 15V

100

f

MAX1

f

MAX2

P

, OPERATING FREQUENCY (kHz)

MAX

f

C

10

R

ØJC

5

0.5

= 0.05 / (t = (PD - PC) / (E

= CONDUCTION DISSIPATION

(DUTY FACTOR = 50%) = 2.1oC/W, SEE NOTES

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

d(OFF)I

+ t

ON2

IDEAL DIODE

d(ON)I

+ E

OFF

)

2.01.0

T

C

o

75

o

75

o

110 110oC

V

GE

15V

C

13V

C

15V

C

13V

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

6

= 25oC

T

5

4

TC = -55oC

3

C

TC = 150oC

3.0

20

VCE = 840V, RG = 82Ω, TJ = 125oC

18

t

SC

16

14

I

SC

12

, SHORT CIRCUIT WITHSTAND TIME (µs)

10

SC

t

13 14 14.5 15

13.5

VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

20

18

16

14

12

, PEAK SHORT CIRCUIT CURRENT (A)

SC

10

I

2

1

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

024

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 13V

6810

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

1200

RG = 82Ω, L = 4mH, VCE = 960V

1000

800

600

400

, TURN-ON ENERGY LOSS (µJ)

200

ON2

E

0

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

TJ = 150oC, VGE = 13V

T

= 150oC, VGE = 15V

J

TJ = 25oC, VGE = 13V

TJ = 25oC, VGE = 15V

1.5120.5

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

2.5

3

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

ICE, COLLECTOR TO EMITTER CURRENT (A)

t

fI

, FALL TIME (ns)

0.5 1 2

160

240

1.5

120

280

360

2.5 3

320

200

RG = 82Ω, L = 4mH, VCE = 960V

TJ = 25oC, VGE = 13V OR 15V

TJ = 150oC, VGE = 13V OR 15V

V

GE

, GATE TO EMITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

15

3

6

0

0208412

9

12

16

I

G(REF)

= 1mA, RL = 600Ω, TC = 25oC

VCE = 1200V

VCE = 800V

VCE = 400V

HGTD1N120BNS, HGTP1N120BN

Typical Performance Curves (Unless Otherwise Speciﬁed) (Continued)

24

RG = 82Ω, L = 4mH, VCE = 960V

20

16

12

, TURN-ON DELAY TIME (ns)

d(ON)I

t

8

10 1.5 2 2.5 3

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJV

25oC

150

25

150

13V

o

C

13V

o

C

15V

o

C

15V

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

84

R

= 82Ω, L = 4mH, VCE = 960V

G

80

76

72

68

TJ = 150oC, VGE = 15V

= 150oC, VGE = 13V

T

J

TJ = 25oC, VGE = 15V

GE

28

RG = 82Ω, L = 4mH, VCE = 960V

24

, RISE TIME (ns)

rI

t

20

16

12

8

4

TJ = 25oC, TJ = 150oC, V

1

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

1.5 2.5

GE

= 13V

GE

20.5

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

= 15V

3

64

, TURN-OFF DELAY TIME (ns)

TJ = 25oC, VGE = 13V

12

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

1.5

d(OFF)I

t

60

56

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

18

DUTY CYCLE < 0.5%, V PULSE DURATION = 250µs

16

14

12

10

8

6

TC = 150oC

4

2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

V

, GATE TO EMITTER VOLTAGE (V)

GE

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

= 20V

CE

TC = -55oC

11

TC = 25oC

137 8 9 10 12

2.5

14 15

30.5

FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO

EMITTER CURRENT

t

fI

t

d(OFF)I

t

rI

t

d(ON)I

10%

90%

10%

90%

V

CE

I

CE

V

GE

E

OFF

E

ON2

I

CE

HGTD1N120BNS, HGTP1N120BN

Typical Performance Curves (Unless Otherwise Speciﬁed) (Continued)

350

FREQUENCY = 1MHz

300

C

IES

250

200

150

100

C, CAPACITANCE (pF)

C

OES

50

C

RES

0

0 5 10 15 20 25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER

VO LTAGE

2.0

1.0

0.5

0.2

0.1

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

θJC

0.005

Z

10

0.01

-5

SINGLE PULSE

10

-4

t1, RECTANGULAR PULSE DURATION (s)

6

PULSE DURATION = 250µs DUTY CYCLE < 0.5%, T

5

4

= 110oC

C

VGE = 15V

VGE = 12V

3

= 10V

V

GE

2

1

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

020410

68

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE

t

1

P

D

t

2

DUTY FACTOR, D = t1 / t PEAK TJ = (PD X Z

-3

10

-2

10

-1

10

θJC

X R

2

) + T

θJC

C

0

10

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

RHRD4120

L = 4mH

RG = 82Ω

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT

+

V

= 960V

DD

-

FIGURE 19. SWITCHING TEST WAVEFORMS

HGTD1N120BNS, HGTP1N120BN

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage rating of V permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or ﬂoating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a speciﬁc application. Other typical frequency vs collector current (I the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.

f

is deﬁned by f

MAX1

= 0.05/(t Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other deﬁnitions are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency limiting condition for an application other than T is important when controlling output ripple under a lightly loaded condition.

f

is deﬁned by f

MAX2

allowable dissipation (P

= (PD - PC)/(E

MAX2

) is deﬁned by PD = (TJM - TC)/R

D

The sum of device switching and conduction losses must not exceed P the conduction losses (P P

= (VCE x ICE)/2.

C

E

and E

ON2

shown in Figure 19. E

. A 50% duty factor was used (Figure 3) and

D

are deﬁned in the switching waveforms

OFF

) are approximated by

C

is the integral of the

ON2

instantaneous power loss (I E

is the integral of the instantaneous power loss

OFF

(I

x VCE) during turn-off. All tail losses are included in

CE

the calculation for E zero (I

CE

= 0).

; i.e., the collector current equals

OFF

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are deﬁned in Figure 19.

. t

JM

d(OFF)I

+ E

OFF

x VCE) during turn-on and

CE

ON2

). The

θJC

.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™

STAR*POWER is used under license

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™



OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™



UltraFET

VCX™



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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4