Page 1
HGTA32N60E2
April 1995
Features
• 32A, 600V
• Latch Free Operation
• Typical Fall Time 620ns
• High Input Impedance
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTA32N60E2 TO-218 GA32N60E2
NOTE: When ordering, use the entire part number.
o
C and +150oC.
32A, 600V N-Channel IGBT
Package
JEDEC MO-093AA (5 LEAD TO-218)
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
KELVIN
5 EMITTER
C
E
4 EMITTER KELVIN
3 COLLECTOR
2 NO CONNECTION
1 GATE
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Sage Operating Area TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 200A at 0.8 BV
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2)at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junctions temperature.
2. V
CE(PEAK)
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
= 360V, TC = +125oC, RGE = 25Ω.
INTERSIL IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
= +25oC, Unless Otherwise Specified
C
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
CES
CGR
C25
C90
CM
GES
GEM
STG
SC
SC
HGTA32N60E2 UNITS
600 V
600 V
50 A
32 A
200 A
±20 V
±30 V
CES
D
L
208 W
-55 to +150
260
3 µs
15 µs
-
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
3-116
File Number 2833.3
Page 2
Specifications HGTA32N60E2
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
CES
CES
CE(SAT)IC
GE(TH)IC
GES
GEP
G(ON)
D(ON)I
RI
LIMITS
UNITSMIN TYP MAX
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
CES
VCE = 0.8 BV
= I
,
C90
TC = +25oC - - 250 µA
CESTC
= +125oC - - 4.0 mA
TC = +25oC - 2.4 2.9 V
VGE = 15V
TC = +125oC - 2.4 3.0 V
= 1.0mA,
VCE = V
GE
TC = +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±500 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
CES
VGE = 15V - 200 260 nC
CES
- 6.5 - V
VGE = 20V - 265 345 nC
L = 500µH, IC = I
, RG = 25Ω,
C90
- 100 - ns
VGE = 15V, TJ = +125oC,
VCE = 0.8 BV
CES
- 150 - ns
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R
FI
OFF
θJC
- 630 820 ns
- 620 800 ns
- 3.5 - mJ
- 0.5 0.6
NOTE:
1. Turn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
100
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
80
60
= +150oC
T
40
20
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
C
TC = +25oC
TC = -40oC
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
CE
= 15V
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
100
VGE = 15V
90
80
70
60
50
40
30
20
, COLLECTOR-EMITTER CURRENT (A)
10
CE
I
= 8.0V
V
GE
= 5.5V
V
GE
0
02 4 6 810
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
= 10V
V
GE
= +25oC
C
VGE = 7.5V
VGE = 7.0V
VGE = 6.5V
= 6.0V
V
GE
o
C/W
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Page 3
HGTA32N60E2
Typical Performance Curves
(Continued)
60
= 15V
V
50
GE
40
VGE = 10V
30
20
, DC COLLECTOR CURRENT (A)
CE
I
10
0
+25 +50 +75 +100 +125 +150
T
, CASE TEMPERATURE (oC)
C
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
12000
f = 1MHz
10000
8000
C
ISS
1.0
VCE = 240V
0.8
VGE = 10V AND 15V
= +150oC, RG = 25Ω
T
J
L = 50µH
0.6
VCE = 480V
0.4
, FALL TIME (µs)
FI
t
0.2
0.0
1 10 100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
R
= 12Ω
L
I
= 2.75mA
G(REF)
= 10V
V
600
450
EMITTER
VOLTAGE
VCC = BV
GATE-
CES
GE
VCC = BV
10
CES
6000
5
0
4000
C, CAPACITANCE (pF)
C
2000
OSS
C
RSS
0
0 5 10 15 20 25
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
300
150
, COLLECTOR-EMITTER VOLTAGE (V)
CE
V
0
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
COLLECTOR-EMITTER VOLTAGE
I
G(REF)
20
I
G(ACT)
TIME (µs)
0.75 BV
0.50 BV
0.25 BV
CES
CES
CES
I
G(REF)
80
I
G(ACT)
FIGURE 5. CAPACITANCE vs COLLECT OR-EMITTER VOLTAGE FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
6
TJ = +150oC
5
4
VGE = 10V
3
2
VGE = 15V
, SATURATION VOLTAGE (V)
1
CE(ON)
V
0
1 10 100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
20
TJ = +150oC
10
R
= 25Ω
G
L = 50µH
VCE = 480V, VGE = 10V, 15V
1.0
V
= 240V, VGE = 10V, 15V
CE
, TURN-OFF SWITCHING LOSS (mJ)
OFF
W
0.1
1 10 100
, COLLECTOR-EMITTER CURRENT (A)
I
CE
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
, GATE-EMITTER VOLTAGE (V)
GE
V
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Page 4
HGTA32N60E2
Typical Performance Curves
1.5
1.0
V
= 15V, RG = 50Ω
GE
0.5
, TURN-OFF DELAY (µs)
VGE = 10V, RG = 50Ω
VGE = 15V, RG = 25Ω
D(OFF)I
t
VGE = 10V, RG = 25Ω
0.0
1 10 100
I
, COLLECTOR-EMITTER CURRENT (A)
CE
(Continued)
TJ = +150oC
V
= 480V
CE
L = 50µH
FIGURE 9. TURN-OFF DELA Y vs COLLECT OR-EMITTER
CURRENT
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows f
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
MAX1
(the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are
possible. t
point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum
value. Device turn-off delay can establish an additional
) plots are possible using the information shown
CE
or
MAX1
whichever is smaller at each point. The information is
is defined by f
is defined as the time between the 90%
D(OFF)I
MAX1
= 0.05/t
D(OFF)I
. t
D(OFF)I
deadtime
100
VCE = 480V
f
= 0.05/t
MAX1
f
MAX2
10
PC = DUTY FACTOR = 50%
R
θJC
, OPERATING FREQUENCY (KHz)
OP
f
1
1 10 100
NOTE:
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
D(OFF)I
= (PD - PC)/W
= 0.5oC/W
ICE, COLLECTOR-EMITTER CURRENT (A)
OFF
TJ = +150oC, VGE = 15V
R
= 25Ω, L = 50µH
G
VCE = 240V
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
frequency limiting condition for an application other than
T
JMAX
. t
is important when controlling output ripple
D(OFF)I
under a lightly loaded condition.
f
is defined by f
MAX2
dissipation (P
) is defined by PD = (T
D
= (PD - PC)/W
MAX2
. The allowable
OFF
- TC)/R
JMAX
θJC
. The
sum of device switching and conduction losses must not
exceed P
the conduction losses (P
(V
CE
. A 50% duty factor was used (Figure 10) so that
D
x ICE)/2. W
OFF
) can be approximated by PC =
C
is defined as the sum of the instantaneous power loss starting at the trailing edge of the input
pulse and ending at the point where the collector current
equals zero (I
The switching power loss (Figure 10) is defined as f
W
. Turn on switching losses are not included because
OFF
CE
- 0A).
MAX1
they can be greatly influenced by external circuit conditions
and components.
x
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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