Page 1
HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet January 2000
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
featuresof MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
o
25
C and 150oC. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49329.
Ordering Information
File Number 4818
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
Packaging
JEDEC TO-263AB
COLLECTOR
G
E
(FLANGE)
= 125oC
J
PART NUMBER PACKAGE BRAND
HGT1S3N60A4DS TO-263AB 3N60A4D
HGTP3N60A4D TO-220AB 3N60A4D
NOTE: Whenordering, use the entirepart number.Add the suffix9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
JEDEC TO-220AB
E
C
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
COLLECTOR
(FLANGE)
G
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
Page 2
HGT1S3N60A4DS, HGTP3N60A4D
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGT1S3N60A4DS
HGTP3N60A4D UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600 V
Collector Current Continuous
At TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
17 A
8A
40 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2). . . . . . . . . . . . . . . . . . . . . . . SSOA 15A at 600V
Power Dissipation Total at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
70 W
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.58 W/oC
Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
-55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
PKG
300
260
o
C
o
C
o
C
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
J
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
CES
IC = 250µA, VGE = 0V 600 - - V
VCE = 600V TJ = 25oC - - 250 µA
TJ = 125oC - - 3.0 mA
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CE(SAT)IC
GE(TH)
GES
Switching SOA SSOA TJ = 150oC, RG = 50Ω, VGE = 15V,
= 3A,
VGE = 15V
TJ = 25oC - 2.0 2.7 V
TJ = 125oC - 1.6 2.2 V
IC = 250µA, VCE = 600V 4.5 6.1 7.0 V
VGE = ±20V - - ±250 nA
15 - - A
L = 200µH, VCE = 600V
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
GEP
g(ON)
rI
fI
ON1
ON2
OFF
IC = 3A, VCE = 300V - 8.8 - V
IC = 3A,
VCE = 300V
IGBT and Diode at TJ = 25oC,
ICE = 3A,
VCE = 390V,
VGE = 15V,
VGE = 15V - 21 25 nC
VGE = 20V - 26 32 nC
-6-ns
-11- ns
-73- ns
RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)
-47- ns
-37- µJ
-5570µJ
-2535µJ
2
Page 3
HGT1S3N60A4DS, HGTP3N60A4D
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
J
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t
rI
fI
ON1
ON2
OFF
EC
rr
IGBT and Diode at TJ = 125oC,
ICE = 3A,
VCE = 390V, VGE = 15V,
RG= 50Ω,
- 5.5 8 ns
-1215ns
- 110 165 ns
L = 1mH,
Test Circuit (Figure 24)
- 70 100 ns
-37- µJ
- 90 100 µJ
-5080µJ
IEC = 3A - 2.25 - V
IEC = 3A, dIEC/dt = 200A/µs - 29 - ns
IEC = 1A, dIEC/dt = 200A/µs - 19 - ns
Thermal Resistance Junction To Case R
θJC
IGBT - - 1.8
Diode - - 3.5
NOTES:
2. Valuesfor two Turn-On loss conditions are shown fortheconvenienceof the circuit designer. E
is the turn-on loss of the IGBT only.E
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
o
o
C/W
C/W
ON2
Typical Performance Curves Unless Otherwise Specified
20
16
12
8
4
, DC COLLECTOR CURRENT (A)
CE
I
0
25 75 100 125 150
50
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTORCURRENT vs CASE
TEMPERATURE
VGE= 15V
20
TJ= 150oC, RG = 50Ω, VGE= 15V, L = 200µH
16
12
8
4
, COLLECTOR TO EMITTER CURRENT (A)
CE
0
I
0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
300 400200100 500 600
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
700
3
Page 4
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
600
300
200
f
= 0.05 / (t
MAX1
= (PD- PC) / (E
f
MAX2
PC = CONDUCTION DISSIPATION
100
, OPERATING FREQUENCY (kHz)
MAX
f
50
(DUTY FACTOR = 50%)
= 1.8oC/W, SEE NOTES
R
ØJC
TJ= 125oC, RG = 50Ω, L = 1mH, VCE= 390V
1
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
d(OFF)I
+ t
ON2
d(ON)I
+ E
OFF
)
)
TCV
o
C
75
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
16
12
= 12V
GE
TJ = 125oC
TJ = 150oC
20 64
GE
15V
623
54
VCE = 390V, RG = 50Ω, TJ= 125oC
t
SC
16
14
12
10
8
6
, SHORT CIRCUIT WITHSTAND TIME (µs)
4
SC
t
10 11 12 15
, GATE TO EMITTER VOLTAGE (V)
V
GE
I
SC
13 14
5618
48
40
32
24
16
8
, PEAK SHORT CIRCUIT CURRENT (A)
SC
I
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
20
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
16
12
TJ = 125oC
TJ = 150oC
8
4
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
023
I
1
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
TJ = 25oC
45
8
4
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
02341
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 25oC
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
240
RG = 50Ω, L = 1mH, VCE = 390V
200
TJ = 125oC, VGE = 12V, VGE = 15V
0
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
, TURN-ON ENERGY LOSS (µJ)
ON2
E
160
120
80
40
TJ = 25oC, VGE = 12V, VGE = 15V
32456
, TURN-OFF ENERGY LOSS (µJ)
OFF
E
140
RG = 50Ω, L = 1mH, VCE = 390V
120
100
80
TJ = 125oC, VGE = 12V OR 15V
60
40
20
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 25oC, VGE = 12V OR 15V
32 4561
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Page 5
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
16
RG = 50Ω, L = 1mH, VCE = 390V
12
TJ = 25oC, TJ = 125oC, VGE = 12V
8
, TURN-ON DELAY TIME (ns)
d(ON)I
t
4
0
21 3456
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 25oC, TJ = 125oC, VGE = 15V
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
112
104
96
88
80
72
, TURN-OFF DELAY TIME (ns)
64
56
d(OFF)I
t
48
VGE = 12V, TJ = 125oC
RG = 50Ω, L = 1mH, VCE = 390V
213456
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
VGE = 15V, TJ = 125oC
VGE = 15V, TJ = 25oC
VGE = 12V, TJ = 25oC
32
RG = 50Ω, L = 1mH, VCE = 390V
28
, RISE TIME (ns)
rI
t
24
20
16
12
8
4
TJ = 25oC OR TJ = 125oC, VGE= 12V
TJ = 25oC OR TJ = 125oC, VGE= 15V
324561
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTORTO
EMITTER CURRENT
96
RG = 50Ω, L = 1mH, VCE = 390V
, FALL TIME (ns)
fI
t
88
80
72
64
56
48
40
213456
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 125oC, VGE = 12V OR 15V
TJ = 25oC, VGE = 12V OR 15V
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
20
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
16
12
8
4
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
46810 14
TJ = 25oC
TJ = 125oC
V
, GATE TO EMITTER VOLTAGE (V)
GE
CE
= 10V
TJ = -55oC
12
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
5
FIGURE 12. FALL TIME vs COLLECTORTO EMITTER
CURRENT
16
I
= 1mA, RL = 100Ω, TJ = 25oC
G(REF)
14
12
10
, GATE TO EMITTER VOLTAGE (V)
GE
V
8
6
4
2
0
VCE = 600V
VCE = 200V
4 8 12 16 2420 280
VCE = 400V
QG, GATE CHARGE (nC)
Page 6
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
250
RG = 50Ω, L = 1mH, VCE = 390V, VGE = 15V
E
= E
200
150
100
50
TOTAL
ICE = 4.5A
ICE = 3A
ICE = 1.5A
ON2
+ E
OFF
, TOTAL SWITCHING ENERGY LOSS (µJ)
0
TOTAL
E
50 75 100
, CASE TEMPERATURE (oC)
T
C
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
700
600
500
400
300
200
C, CAPACITANCE (pF)
100
0
0 20 40 60 80 100
C
IES
C
RES
C
OES
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
12525 150
1000
TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
E
= E
TOTAL
100
, TOTAL SWITCHING ENERGY LOSS (µJ)
30
TOTAL
3 1000
E
+ E
ON2
OFF
ICE = 4.5A
ICE = 3A
ICE = 1.5A
10 100
, GATE RESISTANCE (Ω)
R
G
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
2.7
2.6
2.5
2.4
2.3
2.2
2.1
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
2.0
V
8
ICE = 4.5A
ICE = 1.5A
10 12
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs
ICE = 3A
14 16
FIGURE 17. CAPACITANCE vs COLLECTORTOEMITTER
VOLTAGE
20
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
16
12
8
, FORWARD CURRENT (A)
4
EC
I
0
03
125oC
12 45
VEC, FORWARD VOLTAGE (V)
25oC
FIGURE 19. DIODE FORWARDCURRENTvsFORWARD
VOLTAGE DROP
6
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
64
dIEC/dt = 200A/µs
56
48
40
32
24
16
, RECOVERY TIMES (ns)
rr
t
8
0
1
25oC t
rr
25oC t
a
23 56
IEC, FORWARD CURRENT (A)
25oC t
b
4
125oC t
125oC t
125oC t
b
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
rr
a
Page 7
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
26
22
18
14
, RECOVERY TIMES (ns)
rr
10
t
6
200 600
125oC t
a
25oC t
a
400 800
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
IEC = 3A, VCE = 390V
125oC t
b
25oC t
b
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
0.01
-2
10
, NORMALIZED THERMAL RESPONSE
θJC
Z
-5
10
SINGLE PULSE
-4
10
t1, RECTANGULAR PULSE DURATION (s)
10
1000
-3
200
VCE = 390V
160
120
80
40
Qrr, REVERSE RECOVERY CHARGE (nc)
0
600 800
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
125oC, IEC = 3A
125oC, IEC = 1.5A
25oC, IEC = 20A
25oC, IEC = 10A
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
t
1
P
D
t
2
DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z
-2
10
-1
10
θJC
X R
2
) + T
θJC
C
1000200 400
0
10
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
V
HGTP3N60A4D
DIODE TA49369
L = 1mH
RG = 50Ω
DUT
+
= 390V
V
DD
-
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS
7
GE
I
CE
V
CE
t
d(OFF)I
90%
E
OFF
90%
10%
t
fI
E
10%
0N2
t
d(ON)I
I
CE
t
rI
Page 8
HGT1S3N60A4DS, HGTP3N60A4D
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devicesare removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should neverbe inserted into or removedfrom
circuits with power on.
5. Gate Voltage Rating - Neverexceedthe gate-voltage
rating of V
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devicesdonothaveaninternal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
. Exceeding the rated VGE can result in
GEM
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
MAX1
or f
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
MAX1
= 0.05/(t
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
allowable dissipation (P
= (PD - PC)/(E
MAX2
) is defined by PD=(TJM-TC)/R
D
The sum of device switching and conduction losses must not
exceed P
conduction losses (P
P
C
E
ON2
shown in Figure 25. E
. A 50% duty factor was used (Figure 3) and the
D
) are approximated by:
C
=(VCExICE)/2.
and E
are defined in the switching waveforms
OFF
is the integral of the
ON2
instantaneous power loss (I
E
is the integral of the instantaneous power loss
OFF
(I
CExVCE
calculation for E
(I
CE
) during turn-off. All tail losses are included in the
; i.e., the collector current equals zero
OFF
= 0).
) plots are possible using
CE
; whichever is smaller at each
d(OFF)I
+ t
d(ON)I
).
are defined in Figure 25.
. t
JM
d(OFF)I
+ E
OFF
x VCE) during turn-on and
CE
ON2
). The
θJC
.
8
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
Page 9
HGT1S3N60A4DS, HGTP3N60A4D
TO-263AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
D
L
H
1
13
b
TERM. 4
b
2
13
E
e
e1
L
3
(17.78)
0.080 TYP (2.03)
0.062 TYP (1.58)
MINIMUM PAD SIZE RECOMMENDED FOR
L
2
b
1
0.700
SURFACE-MOUNTED APPLICATIONS
A
0.450
(11.43)
A
1
TERM. 4
L
1
c
J
1
0.350
(8.89)
NOTES:
0.150
(3.81)
INCHES MILLIMETERS
SYMBOL
NOTESMIN MAX MIN MAX
A 0.170 0.180 4.32 4.57 -
A
1
0.048 0.052 1.22 1.32 4, 5
b 0.030 0.034 0.77 0.86 4, 5
b
1
b
2
0.045 0.055 1.15 1.39 4, 5
0.310 - 7.88 - 2
c 0.018 0.022 0.46 0.55 4, 5
D 0.405 0.425 10.29 10.79 E 0.395 0.405 10.04 10.28 -
e 0.100 TYP 2.54 TYP 7
e
1
H
1
J
1
0.200 BSC 5.08 BSC 7
0.045 0.055 1.15 1.39 -
0.095 0.105 2.42 2.66 -
L 0.175 0.195 4.45 4.95 -
L
1
L
2
L
3
0.090 0.110 2.29 2.79 4, 6
0.050 0.070 1.27 1.77 3
0.315 - 8.01 - 2
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3and b2dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Positionoflead tobe measured 0.120inches (3.05mm)frombottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 11 dated 5-99.
TO-263AB
24mm TAPE AND REEL
1.5mm
DIA. HOLE
24mm
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
USER DIRECTION OF FEED
COVER TAPE
4.0mm
16mm
2.0mm
40mm MIN.
ACCESS HOLE
330mm
1.75mm
C
L
30.4mm
13mm
100mm
24.4mm
9
Page 10
HGT1S3N60A4DS, HGTP3N60A4D
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
ØP
Q
D
E
1
L
1
E
H
1
D
1
b
1
A
A
1
SYMBOL
A 0.170 0.180 4.32 4.57 -
A
1
TERM. 4
o
45
b 0.030 0.034 0.77 0.86 3, 4
b
1
c 0.014 0.019 0.36 0.48 2, 3 , 4
D 0.590 0.610 14.99 15.49 -
D
1
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
0.048 0.052 1.22 1.32 -
0.045 0.055 1.15 1.39 2, 3
- 0.160 - 4.06 -
E 0.395 0.410 10.04 10.41 -
L
o
60
1
e
1
b
c
E
1
- 0.030 - 0.76 -
e 0.100 TYP 2.54 TYP 5
3
2
e
J
1
e
1
H
1
J
1
0.200 BSC 5.08 BSC 5
0.235 0.255 5.97 6.47 -
0.100 0.110 2.54 2.79 6
L 0.530 0.550 13.47 13.97 -
L
1
0.130 0.150 3.31 3.81 2
ØP 0.149 0.153 3.79 3.88 -
Q 0.102 0.112 2.60 2.84 -
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L1.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured0.250inches(6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured0.100inches(2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 7-97.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
10
EUROPE
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1130 Brussels, Belgium
TEL: (32) 2.724.2111
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Republic of China
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