Datasheet HGTP20N35G3VL, HGT1S20N35G3VLS, HGT1S20N35G3VL Datasheet (Intersil Corporation)

April 1995

HGTP20N35G3VL,

HGT1S20N35G3VL,

HGT1S20N35G3VLS

20A, 350V N-Channel,

Logic Level, Voltage Clamping IGBTs

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection
= 175oC

•T

J

• Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto­motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro­vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis­tor are provided in the gate circuit.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTP20N35G3VL T0-220AB 20N35GVL
HGT1S20N35G3VL T0-262AA 20N35GVL
HGT1S20N35G3VLS T0-263AB 20N35GVL

NOTE: When ordering, use the entire part number. Add the suf fix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.

The development type number for this device is TA49076.

Packages

JEDEC TO-220AB

COLLECTOR
(FLANGE)

JEDEC TO-262AA

COLLECTOR
(FLANGE)

JEDEC TO-263AB

GATE

EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

GATE

R

1

EMITTER

EMITTER

A

A

M

A

COLLECTOR

GATE

COLLECTOR

GATE

COLLECTOR
(FLANGE)

COLLECTOR

R

2

EMITTER

Absolute Maximum Ratings T

= +25oC, Unless Otherwise Specified

C

HGTP20N35G3VL

HGT1S20N35G3VL

HGT1S20N35G3VLS UNITS

Collector-Emitter Bkdn Voltage At 10mA, R

Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous At V

Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

= 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . I

GE

= 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .I

At V

GE

Inductive Switching Current At L = 2.3mH, T

At L = 2.3mH, T
Collector to Emitter Avalanche Energy At L = 2.3mH, T
Power Dissipation Total At T
Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T

= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

C

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV

NOTE: May be exceeded if I

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

is limited to 10mA.

GEM

= 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV

GE

= +25o C . . . . . . . . . . . . . . . . . . . . . I

C

= +175oC . . . . . . . . . . . . . . . . . . . . . I

C

= +25oC . . . . . . . . . . . . . . E

C

3-66

CER
ECS

C25

C100

GES
SCIS
SCIS

AS

D

, T

J

STG

L

375 V

24 V
20 A
20 A

±10 V

26 A

18 A
775 mJ
150 W

-40 to +175
260

File Number

o

C

o

C

4006

Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS

Collector-Emitter Breakdown Voltage BV

Collector-Emitter Breakdown Voltage

Gate-Emitter Plateau Voltage V

Gate Charge Q

Collector-Emitter Clamp Bkdn. Voltage BV

Emitter-Collector Breakdown Voltage BV

CES

BV

CER

GEP

G(ON)

CE(CL)IC

ECS

LIMITS

UNITSMIN TYP MAX

IC = 10mA,

TC = +175oC 310 345 380 V

VGE = 0V

TC = +25oC 320 350 380 V

TC = -40oC 320 355 390 V

IC = 10mA

TC = +175oC 300 340 375 V
VGE = 0V
RGE= 1kΩ

TC = +25oC 315 345 375 V

TC = -40oC 315 350 390 V

IC = 10A

TC = +25oC - 3.7 - V
VCE = 12V

IC = 10A

TC = +25oC - 28.7 - nC
VGE = 5V
VCE = 12V

= 10A

TC = +175oC 325 360 395 V
RG = 0Ω

IC = 10mA TC = +25oC2032-V

Collector-Emitter Leakage Current I

Collector-Emitter Saturation Voltage V

Gate-Emitter Threshold Voltage V

CE(SAT)IC

GE(TH)IC

Gate Series Resistance R

Gate-Emitter Resistance R

Gate-Emitter Leakage Current I

Gate-Emitter Breakdown Voltage BV

Current Turn-Off Time-Inductive Load t

D(OFF)I

t

F(OFF)I

Inductive Use Test I

Thermal Resistance R

CES

1

2

GES

GESIGES

+

SCIS

θJC

VCE = 250V TC = +25oC--5µA

VCE = 250V TC = +175oC - - 250 µA

= 10A

TC = +25oC - 1.3 1.6 V
VGE = 4.5V

TC = +175oC - 1.25 1.5 V

IC = 20A

TC = +25oC - 1.6 2.8 V
VGE = 5.0V

TC = +175oC - 1.9 3.5 V

= 1mA

VCE = V

GE

TC = +25oC 1.3 1.8 2.3 V

TC = +25oC - 1.0 - kΩ

TC = +25oC 101725kΩ

VGE = ±10V ±400 ±590 ±1000 µA

= ±2mA ±12 ±14 - V

IC = 10A, RG = 25Ω,

-1530µs
L = 550 H, RL = 26.4Ω, VGE = 5V,
VCL= 300V, TC= +175oC

L = 2.3mH,

TC = +175oC18--A
VG = 5V,
RG = 0Ω

TC = +25oC26--A

- - 1.0

o

C/W

3-67

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Typical Performance Curves

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V

50

40

30

= +175oC

T

C

TC = +25oC

20

= -40oC

T

C

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

1

2

VGE, GATE-TO-EMITTER VOLTAGE (V)

3

45

6

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T

100

VGE=10V

80

60

40

20

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

0

, COLLECTOR-TO-EMITTER VOLTAGE (V)

V

CE

7V

24 6810

6.5V

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

50

40

30

VGE = 4.5V

-40oC

40

30

TC= +175oC

VGE = 5.0V

VGE = 4.5V

6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

= +25oC

C

+25oC

+175oC

20

10

, COLLECTOR EMITTER CURRENT (A)

CE

I

0

01234

V

, SATURATION VOLTAGE (V)

CE(SAT)

VGE = 4.0V

FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE

1.4
ICE= 10A

VGE= 4.0V

1.3

1.2

, SATURATION VOLTAGE (V)

CE(SAT)

V

1.1

-25

+25

TJ, JUNCTION TEMPERATURE (oC)

+75

VGE= 4.5V

VGE= 5.0V

+125

+175

FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE

20

10

, COLLECTOR EMITTER CURRENT (A)

CE

I

0

0

1

V

CE(SAT)

2

, SATURATION VOLTAGE (V)

3

4

5

FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF SATURATION VOLTAGE

2.2

2.1

2.0

1.9

1.8

1.7

, SATURATION VOLTAGE (V)

1.6

CE(SAT)

V

1.5

ICE= 20A

VGE= 4.0V

VGE= 4.5V

VGE= 4.5V

VGE= 4.5V

VGE= 5.0V

-25 +25 +75 +125
TJ, JUNCTION TEMPERATURE (oC)

+175

FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF

JUNCTION TEMPERATURE

3-68

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Typical Performance Curves (Continued)

25

VGE= 5.0V

20

PACKAGE LIMITED

15

10

5

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

+25

+50

+75

T

, CASE TEMPERATURE (oC)

C

+100

+125 +150

+175

FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION

OF CASE TEMPERATURE

5

10

4

10

3

10

2

10

V

= 20V

ECS

1.2
ICE= 1mA

1.1

1.0

0.9

0.8

0.7

0.6

, NORMAILZED THRESHOLD VOLTAGE

TH

V

0.5

-25 +75

+25

, JUNCTION TEMPERATURE (oC)

T

J

+125 +175

FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A

FUNCTION OF JUNCTION TEMPERATURE

18

VCL= 300V, RGE= 25Ω, VGE= 5V, L= 550H

16

ICE= 6A, RL= 50Ω

14

1

10

LEAKAGE CURRENT ( A)

0

10

-1

10

+25

+50

V

= 250V

CES

+75

, JUNCTION TEMPERATURE (oC)

T

J

+100

+125

+150

FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF

JUNCTION TEMPERATURE

45

40

35

+25oC

30
25

20

15

+175oC

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

5

0

2

4

6

INDUCTANCE (mH)

VGE= 5V

8

+175

10

, TURN OFF TIME (s)

(OFF)I

t

12

ICE=15A, RL= 20Ω

ICE=10A, RL= 30Ω

10

+25

+50

+75

T

, JUNCTION TEMPERATURE (oC)

J

+100

+125

FIGURE 10. TURN-OFF TIME AS A FUNCTION OF

JUNCTION TEMPERATURE

1200

1000

+25oC

800

600

, ENERGY (mJ)

AS

E

400

200

0

2

+175oC

4

6

INDUCTANCE (mH)

+150

VGE= 5V

8

+175

10

FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING

CURRENT AS A FUNCTION OF INDUCTANCE

FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING

ENERGY AS A FUNCTION OF INDUCTANCE

3-69

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

Typical Performance Curves (Continued)

1600

FREQUENCY = 1MHz

1400

1200

1000

C

IES

800

600

C, CAPACITANCE (pF)

400

C

OES

200

C

RES

0

5

10 15

20

25

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-

EMITTER VOLTAGE

0

10

0.5

t

0.2

0.1

-1

10

0.05

0.02

0.01

-2

10

, NORMALIZED THERMAL RESPONSE

θJC

Z

SINGLE PULSE

-5

10

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-3

10

10

1

P

D

t

2

2

X R

θJC

) + T

C

1

10

θJC

-1

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 15. NORMALIZED TRANSIENT THERMAL

IMPEDANCE, JUNCTION TO CASE

12

IG REF = 1.022mA, RL= 1.2Ω, TC= +25oC

10

VCE= 12V

8

6

VCE= 8V

VCE= 4V

4

2

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0

0

10

Q

G

20

, GATE CHARGE (nC)

30

40

FIGURE 14. GATE CHARGE WAVEFORMS

350

345

TC = +25oC AND +175oC

340

, COLLECTOR-EMITTER

BKDN VOLTAGE (V)

CER

BV

335

0 2000 4000 6000 8000 10000

, GATE-TO-EMITTER RESISTANCE (V)

R

GE

I

CER

= 10mA

FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF

GATE - EMITTER RESISTANCE

6

5

4

3

2

1

0

, GATE-EMITTER VOLTAGE (V)

GE

V

Test Circuits

R

= 25Ω

GEN

5V

FIGURE 17. USE TEST CIRCUIT FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT

R

L

2.3mH
V

DD

C

R

G

DUT

G

E

1/R

= 1/R

G

R

10V

GEN

GEN

+ 1/R

= 50Ω

GE

G

= 50Ω

R

GE

C

DUT

L = 550µH

+

-

V

CC

300V

E

3-70

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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