Datasheet HGTP12N60A4D, HGTG12N60A4D, HGT1S12N60A4DS Datasheet (Intersil Corporation)

HGTG12N60A4D, HGTP12N60A4D,

HGT1S12N60A4DS

Data Sheet November 1999

600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49337.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG12N60A4D TO-247 12N60A4D
HGTP12N60A4D TO-220AB 12N60A4D
HGT1S12N60A4DS TO-263AB 12N60A4D

NOTE: Whenordering,usethe entirepartnumber. Add thesuffix9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.

Symbol

C

File Number 4697.3

Features

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A

• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

= 125oC

J

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

E

C

COLLECTOR

(FLANGE)

G

E

JEDEC TO-263AB

COLLECTOR

(FLANGE)

G

JEDEC STYLE TO-247

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

2-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999

E

C

G

COLLECTOR

(FLANGE)

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG12N60A4D,
HGTP12N60A4D,

HGT1S12N60A4DS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

CM

GES

GEM

54 A
23 A
96 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

167 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300

260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,

= 12A,

VGE = 15V

TJ = 25oC - 2.0 2.7 V

TJ = 125oC - 1.6 2.0 V
IC = 250µA, VCE = 600V - 5.6 - V
VGE = ±20V - - ±250 nA

60 - - A

L = 100µH, VCE = 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

rI

fI
ON1
ON2
OFF

IC = 12A, VCE = 300V - 8 - V
IC = 12A,

VCE = 300V
IGBT and Diode at TJ = 25oC,

ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω,
L = 500µH,
Test Circuit (Figure 24)

VGE = 15V - 78 96 nC
VGE = 20V - 97 120 nC

-17- ns

-8-ns

-96- ns

-18- ns

-55- µJ

- 160 - µJ

-50- µJ

IGBT and Diode at TJ = 125oC,
ICE = 12A,
VCE = 390V, VGE = 15V,
RG= 10Ω,
L = 500µH,
Test Circuit (Figure 24)

-17- ns

-16- ns

- 110 170 ns

-7095ns

-55- µJ

- 250 350 µJ

- 175 285 µJ

2-2

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V
Diode Reverse Recovery Time t

EC

rr

IEC = 12A - 2.2 - V
IEC = 12A, dIEC/dt = 200A/µs - 30 - ns
IEC = 1A, dIEC/dt = 200A/µs - 18 - ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.75
Diode - - 2.0

NOTES:

2. Turn-Off Energy Loss(E

) isdefinedas the integral of theinstantaneouspower loss starting atthetrailing edge of the inputpulseand ending

OFF

at the pointwherethecollector current equals zero (ICE= 0A). Alldevicesweretested per JEDEC Standard No. 24-1 MethodforMeasurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values fortwoTurn-On loss conditionsareshown for the convenienceofthe circuit designer.E

is theturn-onloss of theIGBTonly. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in
Figure 24.

Typical Performance Curves Unless Otherwise Specified

60

50

40

30

20

VGE= 15V,

70

TJ= 150oC, RG = 10Ω, VGE= 15V, L = 200µH

60

50

40

30

20

o
o

C/W
C/W

ON2

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTORCURRENTvs CASE

TEMPERATURE

500

T

300

100

f

= 0.05 / (t

MAX1

f

= (PD- PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)

R

= 0.75oC/W, SEE NOTES

ØJC

, OPERATING FREQUENCY (kHz)

TJ= 125oC, RG = 10Ω, L = 500µH, VCE= 390V

MAX

f

10

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

3

+ t

ON2

d(ON)I

+ E

OFF

)

)

75

C

o

C

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

V

GE

15V

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20

VCE = 390V, RG = 10Ω, TJ= 125oC

18
16
14
12
10

8
6
4
2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

3010 20

9 101112 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

t

SC

13 14

300
275
250
225
200
175
150
125
100
75

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

50

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

2-3

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

24

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

20

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0 0.5 1.0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 12V

GE

TJ = 150oC

TJ = 125oC

TJ = 25oC

1.5 2 2.5

24

DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs

20

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0 0.5 1.0 1.5 2 2.5

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 150oC

TJ = 125oC

TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

700

RG = 10Ω, L = 500µH, VCE = 390V

600

TJ = 125oC, VGE = 12V, VGE = 15V

500

400

300

200

, TURN-ON ENERGY LOSS (µJ)

100

ON2

E

0

2

64 101214168 18202224

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 25oC, VGE = 12V, VGE = 15V

400

RG = 10Ω, L = 500µH, VCE = 390V

350

300

TJ = 125oC, VGE = 12V OR 15V

50

0

642 101214168 18202224

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

, TURN-OFF ENERGY LOSS (µJ)

OFF

E

250

200

150

100

TJ = 25oC, VGE = 12V OR 15V

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

18

RG = 10Ω, L = 500µH, VCE = 390V

17

16

TJ = 25oC, TJ = 125oC, VGE = 12V

TJ = 25oC, TJ = 125oC, VGE = 15V

, TURN-ON DELAY TIME (ns)

d(ON)I

t

15

14

13

12

11

10

642 10121416818202224

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

2-4

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

32

RG = 10Ω, L = 500µH, VCE = 390V

28

, RISE TIME (ns)

rI

t

24

20

16

12

8

4

0

TJ = 125oC OR TJ = 25oC, VGE= 12V

TJ = 25oC OR TJ = 125oC, VGE= 15V

64210121416818202224

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

115

RG = 10Ω, L = 500µH, VCE = 390V

110

105

100

95

, TURN-OFF DELAY TIME (ns)

90

d(OFF)I

t

85

482

6

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

VGE = 12V, VGE = 15V, TJ = 125oC

VGE = 12V, VGE = 15V, TJ = 25oC

12

10

1614

18 20 22 24

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

250

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

200

150

100

CE

= 10V

TJ = 25oC

TJ = -55oC

TJ = 125oC

90

RG = 10Ω, L = 500µH, VCE = 390V

80

, FALL TIME (ns)

fI

t

70

60

50

40

30

20
10

482 6 12 161410 18 20 22 24

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 12. FALLTIMEvs COLLECTOR TOEMITTER

CURRENT

16

I

= 1mA, RL = 25Ω, TC = 25oC

G(REF)

14

12

VCE = 600V

10

8

6

VCE = 400V

VCE = 200V

50

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

6

V

, GATE TO EMITTER VOLTAGE (V)

GE

11

1378910 12

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

1.2
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V

E

= E

TOTAL

1.0

0.8

0.6

0.4

, TOTAL SWITCHING

ENERGY LOSS (mJ)

0.2

TOTAL

E

0

+ E

ON2

OFF

50 75 100

, CASE TEMPERATURE (oC)

T

C

ICE = 24A

ICE = 12A

ICE = 6A

FIGURE 15. TOTAL SWITCHING LOSS vsCASE

TEMPERATURE

14 15

12525 150

4

, GATE TO EMITTER VOLTAGE (V)

2

GE

V

16

0

02010 30

QG, GATE CHARGE (nC)

10

TJ = 125oC, L = 500µH,
VCE = 390V, VGE = 15V
E

= E

TOTAL

1

ICE = 12A

, TOTAL SWITCHING

ENERGY LOSS (mJ)

TOTAL

E

0.1

ICE = 6A

10 100

5 1000

ON2

ICE = 24A

+ E

OFF

R

, GATE RESISTANCE (Ω)

G

50 60 70 80

40

FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

2-5

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

3.0
FREQUENCY = 1MHz

2.5

2.0

C

1.5

1.0

C, CAPACITANCE (nF)

0.5

0

0 5 10 15 20 25

IES

C

OES

C

RES

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 17. CAPACITANCE vs COLLECTORTO EMITTER

VOLTAGE

14

DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs

12

10

8

6

4

, FORWARD CURRENT (A)

EC

I

2

0

0 2.0

0.5 1.0 1.5 2.5
VEC, FORWARD VOLTAGE (V)

125

o

C

25oC

2.4

2.3

2.2

2.1

2.0

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

1.9

V

89

DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, T

ICE = 18A

ICE = 12A

ICE = 6A

11 13 14 15 16

10 12

VGE, GATE TO EMITTER VOLTAGE (V)

= 25oC

J

FIGURE 18. COLLECTOR TO EMITTER ON-STATEVOLTAGE

vs GATE TO EMITTER VOLTAGE

90

dIEC/dt = 200A/µs

80
70

125oC t

rr

60
50
40
30

, RECOVERY TIMES (ns)

20

rr

t

10

0

112118

234567 910

125oC t

IEC, FORWARD CURRENT (A)

a

125oC t

b

25oC t

rr

25oC t

a

25oC t

b

FIGURE 19. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

65
60

125oC t

55
50
45
40
35
30
25
20

, RECOVERY TIMES (ns)

rr

t

15
10

5

200 600

b

125oC t

a

300 400 500 700 800

diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

IEC = 12A, VCE = 390V

25oC t
25oC t

900 1000

a

b

FIGURE 21. RECOVERYTIMES vs RATE OFCHANGEOF

CURRENT

2-6

FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT

400

VCE = 390V

350

300

250

200

150

100

50

, REVERSE RECOVERY CHARGE (nc)

rr

Q

0

200 300 400 900

diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)

125oC IEC = 12A

125oC IEC = 6A

25oC IEC = 12A

25oC IEC = 6A

600 700 800

FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF

CURRENT

1000500

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Typical Performance Curves Unless Otherwise Specified (Continued)

0

10

0.50

0.20

0.10

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

θJC

-2

10

Z

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Test Circuit and Waveforms

P

DUTY FACTOR, D = t1 / t
PEAK TJ = (PDX Z

-1

10

t

1

D

t

2

2

X R

θJC

) + T

C

1

10

θJC

0

10

HGTP12N60A4D

DIODE TA49371

90%

E

ON2

10%

t

d(ON)I

t

rI

RG = 10Ω

L = 500µH

DUT

V

GE

E

V

CE

90%

+

= 390V

V

DD

-

I

CE

t

d(OFF)I

10%

OFF

t

fI

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS

2-7

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production bynumerousequipmentmanufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:

1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.

2. When devicesare removedbyhand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devicesshouldnever be inserted into or removed from
circuits with power on.

5. Gate Voltage Rating - Neverexceedthegate-voltage
rating of V
permanent damage to the oxide layer in the gate region.

6. Gate Termination-The gates of these devices are
essentially capacitors. Circuits that leave the gate open­circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.

7. GateProtection-Thesedevices do not haveaninternal
monolithic Zener diode from gate to emitter. If gate
protection isrequiredanexternal Zenerisrecommended.

. Exceeding the rated VGE can result in

GEM

Operating Frequency Information

Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f

MAX1

or f

MAX2

point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.

f

is defined by f

MAX1

MAX1

= 0.05/(t
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t

d(OFF)I

and t

d(ON)I

Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.

f

is defined by f

MAX2

allowable dissipation (P

= (PD - PC)/(E

MAX2

) is defined by PD=(TJM-TC)/R

D

The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P

=(VCExICE)/2.

C

E

and E

ON2

shown in Figure 25. E

. A 50% duty factor was used (Figure 3) and

D

are defined in the switching waveforms

OFF

) are approximated by

C

is the integral of the

ON2

instantaneous power loss (I
E

is the integral of the instantaneous power loss

OFF

(I

CExVCE

calculation for E
(I

CE

) during turn-off. All tail losses are included in the

; i.e., the collector current equals zero

OFF

= 0).

) plots are possible using

CE

; whichever is smaller at each

d(OFF)I

+ t

d(ON)I

).

are defined in Figure 25.

. t

JM

d(OFF)I

+ E

OFF

x VCE) during turn-on and

CE

ON2

). The

θJC

.

2-8

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