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Bulletin PD-20395 rev. A 01/02
HFA80FA120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• Fast Recovery Time Characteristic
• Electrically Isolated Base Plate
• Large Creepage Distance Between Terminal
• Simplified Mechanical Designs, Rapid Assembly
Description/ Applications
The dual diode series configuration (HFA80FA120) is used for output rectification
or frewheeling/ clamping operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact assemblies to be built.
These modules are intended for general applications such as HV power
supplies, electronic welders, motor control and inverters.
Absolute Maximum Ratings
Parameters Max Units
V
R
I
F
I
FSM
I
FRM
P
D
V
ISOL
TJ, T
Cathode-to-Anode Voltage 1200 V
Continuous Forward Current, TC = 60°C Per Leg 40 A
Single Pulse Forward Current, TJ = 25°C Per Leg 400
Maximum Repetitive Forward Current, Rated VR,72
Square wave, 20KHz, TC = 60°C
Max Power Dissipation, TC = 100°C 71 W
Max Power Dissipation, TC = 25°C 178
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
Operating Junction and Storage Temperatures - 55 to 150 °C
STG
VR = 1200V
V
t
F(typ)
I
F(AV)
rr (typ)
= 2.6V
= 80A
= 25ns
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Case Styles
HFA80FA120
SOT-227
K2
K1
A2
A1
1
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HFA80FA120
Bulletin PD-20395 rev. A 01/02
Electrical Characteristics @ T
Parameters Min Typ Max Test Conditions
V
BR
V
FM
I
RM
C
T
Cathode Anode 1200 - - V I R = 100µA
Breakdown Voltage
Forward Voltage - 2.6 3.0 V I F = 25A Fig. 1
Reverse Leakage Current - 2.0 - µA V R = VR Rated Fig. 2
Junction Capacitance - 43 - pF V R = 200V Fig. 3
= 25°C (unless otherwise specified)
J
Units
- 2.9 3.3 V I F = 40A
- 3.4 - V I F = 80A, T J = 125°C
- 0.5 2 mA T J = 125°C, VR = 0.8 x VR Rated
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
t
rr
I
RRM
Q
Parameters Min Typ Max Test Conditions
Reverse Recovery Time - 25 - ns I F = 1A, diF/dt = 200A/µs, VR = 30V
-52- TJ = 25°C
- 110 - TJ = 125°C
Peak Recovery Current - 5.9 - A T J = 25°C
- 10.8 - TJ = 125°C
rr
Reverse Recovery Charge - 160 - nC T J = 25°C
- 630 - TJ = 125°C
Units
I
= 40A
F
diF /dt = - 200A/µs
VR = 200V
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
R
thCS
Wt Weight 30 g
T Mounting Torque 1.3 (N*m)
2
Junction to Case, Single Leg Conducting 0.7 °C/W
Both Leg Conducting 0.35 K/W
Case to Heat Sink, Flat, Greased Surface 0.05
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HFA80FA120
Bulletin PD-20395 rev. A 01/02
100
(A)
F
10
Instantaneous Forward Current - I
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
10
Tj = 150˚C
1
(µA)
R
0.1
0.01
Reverse Current - I
0.001
0.0001
0 200 400 600 800 1000 1200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
Tj = 25˚C
(pF)
T
100
125˚C
25˚C
1
1 1.5 2 2.5 3 3.5 4
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1
D = 0.50
D = 0.20
(°C/W)
0.1
thJC
D = 0.10
D = 0.05
D = 0.02
0.01
0.001
Thermal Impedance Z
D = 0.01
Single Pulse
(Thermal Resistance)
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
10
1 10 100 1000 10000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2 .
2. Peak Tj = Pdm x ZthJC + Tc .
Characteristics
thJC
3
Page 4
HFA80FA120
Bulletin PD-20395 rev. A 01/02
160
140
120
100
DC
80
60
40
Square wave
(D = 0.50)
20
Allowable Case Temperature (°C)
0
0 10203040506070
Average Forward Current - I
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
140
120
If = 40A, Tj = 125˚C
If = 20A, Tj = 125˚C
100
F(AV)
(A)
200
180
RMS Limit
160
140
120
100
80
60
40
Average Power Loss ( Watts )
20
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0 102030405060
Average Forward Current - I
Fig. 6 - Forward Power Loss Characteristics
1800
1600
1400
If = 40A, Tj = 125˚C
1200
If = 20A, Tj = 125˚C
DC
F(AV)
(A)
80
trr ( ns )
60
40
20
100 1000
di
F
Fig. 7 - Typical Reverse Recovery vs. di
(3) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
F(AV)
4
If = 40A, Tj = 25˚C
If = 20A, Tj = 25˚C
/dt (A/µs )
) x R
thJC
;
F(AV)
REV
x VFM @ (I
/dt
F
/ D) (see Fig. 6);
= rated V
R1
1000
800
Qrr ( nC )
600
If = 40A, Tj = 25˚C
400
If = 20A, Tj = 25˚C
200
0
100 1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di
R
/dt
F
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Page 5
dif/dt
ADJUST
L = 70µH
G
V = 200V
R
0.01
D
IRFP250
S
HFA80FA120
Bulletin PD-20395 rev. A 01/02
3
t
I
F
0
Ω
D.U.T.
1. diF/dt - Rate of change of current through
zero crossing
2. I
- Peak reverse recovery current
RRM
- Reverse recovery time measured from
3. t
rr
zero crossing point of negative going I
point where a line passing through 0.75 I
and 0.50 I
extrapolated to zero current
RRM
1
di /dt
f
Fig. 10 - Reverse Recovery Waveform and DefinitionsFig. 9 - Reverse Recovery Parameter Test Circuit
rr
t
a
to
F
RRM
t
b
2
I
RRM
di(rec)M/dt
0.75
I
RRM
4. Qrr - Area under curve defined by
t
and I
rr
5. di
/ dt - Peak rate of change
(rec) M
of current during t b portion of t
0.5
RRM
4
Q
rr
I
RRM
5
t rr x I
RRM
=
Q
rr
2
rr
SOT-227 Package Details
38.30 ( 1.508 )
4
1
37.80 ( 1.488 )
30.20 ( 1.189 )
29.80 ( 1.173 )
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4.40 (.173 )
4.20 (.165 )
12.50 ( .492 )
7.50 ( .295 )
2.10 ( .082 )
1.90 ( .075 )
-A-
4X
3
2
8.10 ( .319 )
7.70 ( .303 )
CHAMFER
2.00 ( .079 ) X 457
6.25 ( .246 )
R FULL
15.00 ( .590 )
0.25 ( .010 ) M C A M B M
2.10 ( .082 )
1.90 ( .075 )
-C-
25.70 ( 1.012 )
25.20 ( .992 )
-B-
0.12 ( .005 )
LEAD ASSIGMENTS
C
E
G
E
IGBT
A1
K2
4
1
K1
A2
HEXFRED
S
D
LEAD ASSIGNMENTS
4
1
K2 A2
A1
G
S
HEXFET
4
1
3
2
K1
K1 A1
HEXFRED
12.30 ( .484 )
11.80 ( .464 )
3
2
K2
3
2
A2
5
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HFA80FA120
Bulletin PD-20395 rev. A 01/02
SOT-227 Package Details
Tube
QUANTITIES PER TUBE IS 10
M4 SCREW AND WASHER INCLUDED
Ordering Information Table
Device Code
HF A 80 FA 120
1 5
2
1 - Hexfred Family
2 - Process Designator (A = Electron Irradiated)
3 - Average Current (80 = 80A)
4 - Package Outline (FA = SOT-227)
5 - Voltage Rating (120 = 1200V)
This product has been designed and qualified for Industrial Level.
4
3
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Visit us at www.irf.com for sales contact information. 01/02
6
TAC Fax: (310) 252-7309
www.irf.com
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