Page 1
VS-HFA30PA60CPbF
TO-2 47 AC
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 15 A
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
V
at I
F
F
(typ.) 19 ns
t
rr
T
max. 150 °C
J
Diode variation Single die
2 x 15 A
600 V
1.7 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30PA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A per leg continuous
current, the VS-HFA30PA60CPbF is especially well suited
for use as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED
line features extremely low values of peak recovery current
(I
RRM
the t
to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA30PA60CPbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
and Q
RRM
) and does not exhibit any tendency to “snap-off” during
portion of recovery. The HEXFRED features combine
b
rr
®
product
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94068 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per leg
per device 30
This document is subject to change without notice.
R
I
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C
TC = 25 °C 74
T
= 100 °C 29
C
Stg
600 V
15
150
60
W
- 55 to + 150 °C
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A
Page 2
VS-HFA30PA60CPbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 15 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
See fig. 8
b
V
BR
IR = 100 µA 600 - -
IF = 15 A
I
FM
I
RM
T
S
t
rr
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
/dt1 TJ = 25 °C - 250 -
dI
(rec)M
/dt2 TJ = 125 °C - 160 -
dI
(rec)M
= 30 A - 1.5 2.0
F
I
= 15 A, TJ = 125 °C - 1.2 1.6
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 400 1000
J
VR = 200 V See fig. 3 - 25 50 pF
Measured lead to lead 5 mm from package body - 12 - nH
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 19 -
TJ = 25 °C
TJ = 125 °C - 70 120
TJ = 25 °C - 4.0 6.0
TJ = 125 °C - 6.5 10
TJ = 25 °C - 80 180
TJ = 125 °C - 220 600
®
I
= 15 A
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
See fig. 1
See fig. 2
-1.31.7
-1.010
-4260
V
µA
nst
A
nC
A/µs
THERMAL-MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
Junction to case,
single leg conduction
Junction to case,
R
thJC
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
thJA
R
thCS
Weight
Mounting torque
Marking device Case style TO-247AC (JEDEC) HFA30PA60C
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063” from case (1.6 mm) for 10 s - - 300 °C
--1.7
- - 0.85
Typical socket mount - - 40
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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K/W
kgf · cm
(lbf · in)
Page 3
HEXFRED
I
F
- Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
1.0 1.2 1.4 1.8 2.21.6 2.0 2.4
1
10
100
94068_01
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (µA)
VR - Reverse Voltage (V)
0 100 200 300 500400 600
0.01
0.1
1
10
100
1000
10 000
94068_02
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
0 100 200 500400300 600
10
100
94068_03
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
94068_04
Single pulse
(thermal response)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
®
Ultrafast Soft Recovery Diode, 2 x 15 A
VS-HFA30PA60CPbF
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
Document Number: 94068 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
This document is subject to change without notice.
Characteristics (Per Leg)
thJC
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Page 4
VS-HFA30PA60CPbF
t
rr
(ns)
dIF/dt (A/µs)
100 1000
0
100
80
20
40
60
94068_05
IF = 30 A
I
F
= 15 A
I
F
= 5.0 A
VR = 200 V
T
J
= 125 °C
T
J
= 25 °C
I
RR
(A)
dIF/dt (A/µs)
100 1000
0
25
20
5
10
15
94068_06
VR = 200 V
T
J
= 125 °C
T
J
= 25 °C
IF = 30 A
I
F
= 15 A
I
F
= 5.0 A
Vishay Semiconductors
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
800
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
600
400
(nC)
rr
Q
200
94068_07
Fig. 7 - Typical Stored Charge vs. dI
IF = 30 A
= 15 A
I
F
= 5.0 A
I
F
0
100 1000
dIF/dt (A/µs)
/dt (Per Leg)
F
Fig. 6 - Typical Recovery Current vs. dI
/dt (Per Leg)
F
10 000
/dt (A/µs)
(rec)M
dI
94068_08
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
IF = 30 A
= 15 A
I
1000
100
F
= 5.0 A
I
F
100 1000
dIF/dt (A/µs)
Fig. 8 - Typical dI
/dt vs. dIF/dt (Per Leg)
(rec)M
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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Page 5
HEXFRED
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
®
Ultrafast Soft Recovery Diode, 2 x 15 A
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
VS-HFA30PA60CPbF
Vishay Semiconductors
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Document Number: 94068 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 10 - Reverse Recovery Waveform and Definitions
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Page 6
VS-HFA30PA60CPbF
1 - Vishay Semiconductors product
2
- HEXFRED® family
3
- Electron irradiated
4
-Current rating (30 = 30 A)
5
- PA = TO-247AC
Device code
51 32 4 6 7 8
HFVS- A 30 PA 60 C PbF
6
7
-
Circuit configuration
C = Common cathode
8
-
PbF = Lead (Pb)-free
- Voltage rating: (60 = 600 V)
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 15 A
ORDERING INFORMATION TABLE
HEXFRED
®
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95223
Part marking information www.vishay.com/doc?95226
SPICE model www.vishay.com/doc?95182
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Page 7
www.vishay.com
0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6)
Ø P
(Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay Semiconductors
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
(3)
(4)
(5)
(6)
(7)
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 95223
Page 8
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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