Page 1
VS-HFA25TB60SPbF
Vishay High Power Products
Ultrafast Soft Recovery Diode, 25 A
D2PAK
PRODUCT SUMMARY
V
R
V
at 25 A at 25 °C 1.7 V
F
I
F(AV)
t
(typical) 23 ns
rr
(maximum) 150 °C
T
J
Q
(typical) 112 nC
rr
dI
/dt (typical) 250 A/μs
(rec)M
I
RRM
N/C
Base
cathode
1
600 V
25 A
10 A
2
Anode
HEXFRED
3
®
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t
portion of recovery. The HEXFRED features combine to
b
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
RRM
rr
®
product line features
RRM
) and
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94066 For technical questions, contact: diodestech@vishay.com
Revision: 22-Feb-10 1
J
F
FSM
FRM
, T
R
TC = 100 °C 25
D
TC = 25 °C 125
T
= 100 °C 50
C
Stg
600 V
225
100
W
- 55 to + 150 °C
www.vishay.com
ASingle pulse forward current I
Page 2
VS-HFA25TB60SPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr1
rr2
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall recovery
current during t
b
See fig. 8
IR = 100 μA 600 - -
IF = 25 A
I
= 50 A - 1.5 2.0
F
I
= 25 A, TJ = 125 °C - 1.3 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 600 2000
J
VR = 200 V See fig. 3 - 55 100 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 23 -
See fig. 1
See fig. 2
TJ = 25 °C
-1.31.7
-1.520
-5075
TJ = 125 °C - 105 160
TJ = 25 °C - 4.5 10
TJ = 125 °C - 8.0 15
rr1
rr2
TJ = 25 °C - 112 375
TJ = 125 °C - 420 1200
I
= 25 A
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
/dt1 TJ = 25 °C - 250 -
/dt2 TJ = 125 °C - 160 -
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Marking device Case style D
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2 Revision: 22-Feb-10
0.063" from case (1.6 mm) for 10 s - - 300 °C
lead
R
--1.0
thJC
Typical socket mount - - 80
R
thJA
-2.0- g
-0.07- oz.
2
PAK HFA25TB60S
Document Number: 94066
K/W
Page 3
VS-HFA25TB60SPbF
100
10
- Instantaneous Forward Current (A)
F
I
94066_01
HEXFRED
Ultrafast Soft Recovery Diode, 25 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
1
0.6 1.0 1.4 1.8 2.2 2.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
1000
®
10 000
1000
100
- Reverse Current (μA)
R
I
0.01
94066_02
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Vishay High Power Products
TJ = 150 °C
TJ = 125 °C
10
1
0.1
0 100 200 300 500400 600
TJ = 25 °C
VR - Reverse Voltage (V)
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
1101001000
94066_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
94066_04
Single pulse
(thermal response)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Characteristics
thJC
P
DM
t
1
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t
2
1/t2
+ T
thJC
C
1
Document Number: 94066 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 22-Feb-10 3
Page 4
VS-HFA25TB60SPbF
Vishay High Power Products
(ns)
rr
t
94066_05
(A)
rr
I
140
120
100
IF = 50 A
80
= 25 A
I
F
= 10 A
I
F
60
40
20
100 1000
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
30
VR = 200 V
= 125 °C
T
J
25
= 25 °C
T
J
IF = 50 A
20
= 25 A
I
F
= 10 A
I
F
15
10
5
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
1400
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
IF = 50 A
= 25 A
I
800
600
400
200
F
= 10 A
I
F
0
100 1000
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
IF = 50 A
= 25 A
I
F
= 10 A
I
F
(nC)
rr
Q
94066_07
10 000
/dt (A/μs)
(rec)M
dI
1200
1000
1000
F
/dt
94066_06
0
100 1000
dIF/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
94066_08
100
100 1000
dIF/dt (A/μs)
Fig. 8 - Typical dI
/dt vs. dIF/dt
(rec)M
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94066
4 Revision: 22-Feb-10
Page 5
VS-HFA25TB60SPbF
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
= 200 V
V
R
0.01 Ω
L = 70 μH
(3)
a
(2)
D
IRFP250
S
t
rr
I
RRM
0.75 I
(4) Q
- area under curve dened by t
rr
and I
(5) dI
(rec)M
current during t
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
(1) dI
/dt - rate of change of current
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
t
Vishay High Power Products
D.U.T.
t
b
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
RRM
RRM
/dt - peak rate of change of
rr
Document Number: 94066 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 22-Feb-10 5
Page 6
VS-HFA25TB60SPbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS- HF A 25 TB 60 S TRL PbF
1 - HPP product suffix
2 - HEXFRED® family
- Process designator: A = Electron irradiated
3
-Current rating (25 = 25 A)
4
- Package outline (TB = TO-220, 2 leads)
5
- Voltage rating (60 = 600 V)
6
- S = D2PAK
7
- None = Tube (50 pieces)
8
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
- PbF = Lead (Pb)-free
9
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
324
51
6789
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: diodestech@vishay.com
6 Revision: 22-Feb-10
Document Number: 94066
Page 7
DIMENSIONS in millimeters and inches
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base
Metal
Plating
Conforms to JEDEC outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
D2PAK
SYMBOL
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
This document is subject to change without notice.
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
MILLIMETERS INCHES
www.vishay.com/doc?91000
NOTES
Page 8
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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