Page 1
PD-95741
HFA25TB60PbF
TM
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low
Very Low Q
I
RRM
rr
Specified at Operating Conditions
Lead-Free
Benefits
Reduced RFI and EMI
1
CATHODE
BASE
CATHODE
4
2
Ultrafast, Soft Recovery DiodeHEXFRED
ANODE
2
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (I
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
) and does not exhibit any
RRM
VR = 600V
VF(typ.)* = 1.3V
I
= 25A
F(AV)
Qrr (typ.)= 112nC
I
= 10A
RRM
3
trr(typ.) = 23ns
di
/dt (typ.) = 250A/µs
(rec)M
TO-220AC
Absolute Maximum Ratings
Parameter Max Units
V
R
IF @ TC = 100°C Continuous Forward Current 25
I
FSM
I
FRM
PD @ TC = 25°C Maximum Power Dissipation 125
PD @ TC = 100°C Maximum Power Dissipation 50
T
J
T
STG
Cathode-to-Anode Voltage 600 V
Single Pulse Forward Current 225 A
Maximum Repetitive Forward Current 100
Operating Junction and
Storage Temperature Range
-55 to +150
C
W
* 125°C
www.irf.com 1
10/19/04
Page 2
HFA25TB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Test Conditions
V
BR
V
FM
I
RM
C
T
L
S
Cathode Anode Breakdown Voltage 600 V IR = 100µA
Max Forward Voltage
1.3 1.7 I
1.5 2.0 V IF = 50A
= 25A
F
1.3 1.7 IF = 25A, TJ = 125°C
Max Reverse Leakage Current
1.5 20 V
600 2000 T
µA
= VR Rated
R
= 125°C, VR = 0.8 x VR Rated
J
Junction Capacitance 55 100 pF VR = 200V
Series Inductance 8.0 nH
Measured lead to lead 5mm from
package body
See Fig. 1
See Fig. 2
D Rated
See Fig. 3
Dynamic Recovery Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min Typ Max Units Test Conditions
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
di
(rec)M
Reverse Recovery Time 23 IF = 1.0A, dif/dt = 200A/µs, VR = 30V
See Fig. 5, 6 & 16
50 75 ns TJ = 25°C
105 160 TJ = 125°C IF = 25A
Peak Recovery Current 4.5 10 TJ = 25°C
See Fig. 7& 8
8.0 15 TJ = 125°C VR = 200V
Reverse Recovery Charge 112 375 TJ = 25°C
See Fig. 9 & 10
420 1200 TJ = 125°C dif/dt = 200A/µs
/dt1 Peak Rate of Fall of Recovery Current 250 TJ = 25°C
/dt2 During t
b
See Fig. 11 & 12
160 TJ = 125°C
A
nC
A/µs
Thermal - Mechanical Characteristics
Parameter Min Typ Max Units
T
Lead Temperature 300 °C
lead
R
JC
th
R
Thermal Resistance, Junction to Ambient 80
JA
th
R
Thermal Resistance, Case to Heat Sink 0.5
CS
th
Wt
Thermal Resistance, Junction to Case 1.0
Weight
Mounting Torque
6. 0 12 Kg-cm
5.0 10 lbfin
2.0 g
0.07 (oz)
K/W
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
Page 3
HFA25TB60PbF
1
1
A
1
0
A
0000
T = 150°C
1000
(µA)
R
Reverse Current - I
100
10
1
0.1
0.01
J
T = 125°C
J
T = 25°C
J
0 100 200 300 400 500 600
Reverse Voltage - V (V)
R
(A)
F
00
T = 150°C
J
T = 125°C
J
T = 25°C
10
J
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
000
Instantaneous Forward Current - I
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V (V)
FM
A
(pF)
T
100
T = 25°C
J
Junction Capacitance -C
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
10
1 10 100 100
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
thJC
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
J DM thJC C
Characteristics
thjc
www.irf.com
1 2
P
DM
t
1
t
2
3
Page 4
HFA25TB60PbF
1
1
2
2
3
A
1
1
1
A
1
A
1
1
1
A
40
20
00
I = 50A
F
80
trr- (nC)
I = 25A
F
I = 10A
F
60
40
20
100 1000
di /dt - (A/µs)
f
V = 200V
R
T = 125°C
J
T = 25°C
J
Fig. 5 - Typical Reverse Recovery vs. dif/dt
400
V = 200V
R
T = 125°C
J
T = 25°C
J
200
0
V = 200V
R
T = 125°C
J
T = 25°C
J
5
I = 50A
F
0
I = 25A
F
I = 10A
Irr- ( A)
F
5
0
5
0
100 1000
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
0000
V = 200V
R
T = 125°C
J
T = 25°C
J
000
800
Qrr- (nC)
600
400
200
Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di
4
I = 50A
F
I = 25A
F
I = 10A
F
0
100 1000
di /dt - (A/µs)
f
I = 50A
1000
di (rec) M/dt- (A /µs)
F
I = 25A
F
I = 10A
F
100
100 1000
di /dt - (A/µs)
f
/dt vs. dif/dt
(rec)M
www.irf.com
Page 5
0
REVERSE RECOVERY CIRCUIT
dif/dt
ADJUST
L = 70µH
G
V = 200V
R
0.01
D
IRFP250
S
HFA25TB60PbF
3
t
RRM
rr
I
RRM
t
b
Q
0.5
t
a
2
di(rec)M/dt
0.75 I
RRM
4. Qrr - Area under curve defined by t
and I
RRM
t
Qrr =
2
5. di
/dt - Peak rate of change of
(rec)M
current during tb portion of t
I
rr
RRM
4
5
rr
X I
rr
RRM
rr
I
F
Ω
1
di /dt
RRM
f
and 0.50 I
D.U.T.
1. dif/dt - Rate of change of current
through zero crossing
2. I
- Peak reverse recovery current
RRM
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I
extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
www.irf.com
5
Page 6
HFA25TB60PbF
TO-220AC Package Outline
Dimensions are shown in millimeters (inches)
TO-220AC Part Marking Information
PART NUMBER
DATE CODE
P = LE AD-FREE
YEAR 1 = 2001
WEEK 19
LINE C
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 19
P = LEAD-FREE
T HIS IS A H F A06T B 1 20
EXAMPLE:
LOT CODE 1789
ASS E MBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
EXAMPLE:
THIS IS A HFA06TB120
LOT CODE 1789
ASS EMBLED ON WW 19, 2001
IN THE A SSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
AS S EMB L Y
LOT CODE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
6
www.irf.com
Loading...