International Rectifier's HFA16TB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16TB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
) and does not
RRM
Bulletin PD -2.492 rev. B 09/02
HFA16TB120
VR = 1200V
VF(typ.)* = 2.3V
I
= 16A
F(AV)
Qrr (typ.)= 260nC
I
(typ.) = 5.8A
RRM
trr(typ.) = 30ns
di
/dt (typ.)* = 76A/µs
(rec)M
TO-220AC
Absolute Maximum Ratings
V
R
IF @ TC = 100°CContinuous Forward Current16
I
FSM
I
FRM
PD @ TC = 25°CMaximum Power Dissipation151
PD @ TC = 100°C Maximum Power Dissipation60
T
J
T
STG
* 125°C
ParameterMax Units
Cathode-to-Anode Voltage1200V
Single Pulse Forward Current190A
Maximum Repetitive Forward Current64