Datasheet HFA1205 Datasheet (Intersil Corporation)

Page 1
HFA1205
September 1998 File Number 3605.5
Dual, 400MHz, Low Power, Video Operational Amplifier
The HFA1205 is a dual, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 process.
These amplifiers deliver 400MHz bandwidth and 1275V/µs slew rate, on only 60mW of quiescent power. They are specifically designed to meet the performance, power, and cost requirements of high volume video applications. The excellent gain flatness and differential gain/phase performance make these amplifiers well suited for component or composite video applications. Video performance is maintained even when driving a back terminated cable (R when driving two back terminated cables (R
= 150), and degrades only slightly
L
=75Ω). RGB
L
applications will benefit from the high slew rates, and high full power bandwidth.
The HFA1205 is a pin compatible, low power, high performance upgrade for the popular Intersil HA5023. For a dual amplifier with output disable capability, please see the HFA1245 datasheet.
Ordering Information
PART NUMBER
(BRAND)
HFA1205IP -40 to 85 8 Ld PDIP E8.3 HFA1205IB
(H1205I) HA5023EVAL High Speed Op Amp DIP Evaluation Board
TEMP.
RANGE (oC) PACKAGE
-40 to 85 8 Ld SOIC M8.15
PKG.
NO.
Features
• Low Supply Current . . . . . . . . . . . . . . . . . 5.8mA/Op Amp
• High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 2M
• Wide -3dB Bandwidth (A
= +2). . . . . . . . . . . . . . 400MHz
V
• Very Fast Slew Rate. . . . . . . . . . . . . . . . . . . . . . 1275V/µs
• Gain Flatness (to 50MHz). . . . . . . . . . . . . . . . . . . . ±0.03dB
• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.03%
• Differential Phase. . . . . . . . . . . . . . . . . . . . 0.03 Degrees
• Pin Compatible Upgrade to HA5023
Applications
• Flash A/D Drivers
• High Resolution Monitors
• Video Switching and Routing
• Professional Video Processing
• Video Digitizing Boards/Systems
• Multimedia Systems
• RGB Preamps
• Medical Imaging
• Hand Held and Miniaturized RF Equipment
• Battery Powered Communications
• High Speed Oscilloscopes and Analyzers
Pinout
HFA1205
(PDIP, SOIC)
TOP VIEW
OUT1
1 2
-IN1
+IN1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
-
+
3 4
V-
8
V+
7
OUT2
6
-IN2
-
+
5
+IN2
Page 2
HFA1205
Absolute Maximum Ratings Thermal Information
Voltage Between V+ and V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8V
Output Current (Note 2). . . . . . . . . . . . . . . . .Short Circuit Protected
30mA Continuous
60mA 50% Duty Cycle
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . .600V
SUPPLY
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle) output current must not exceed 30mA for maximum reliability.
Thermal Resistance (Typical, Note 1) θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Maximum Junction Temperature (Die Only) . . . . . . . . . . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications V
PARAMETER TEST CONDITIONS
INPUT CHARACTERISTICS
Input Offset Voltage A 25 - 2 5 mV
Average Input Offset Voltage Drift B Full - 1 10 µV/oC Input Offset Voltage
Common-Mode Rejection Ratio
Input Offset Voltage Power Supply Rejection Ratio
Non-Inverting Input Bias Current A 25 - 6 15 µA
Non-Inverting Input Bias Current Drift B Full - 5 60 nA/oC Non-Inverting Input Bias Current
Power Supply Sensitivity
Non-Inverting Input Resistance VCM = ±1.8V A 25 0.8 2 - M
Inverting Input Bias Current A 25 - 2 8.5 µA
Inverting Input Bias Current Drift B Full - 60 200 nA/oC Inverting Input Bias Current
Common-Mode Sensitivity
= ±5V, AV = +1, RF = 560, RL = 100, Unless Otherwise Specified
SUPPLY
(NOTE 3)
TEST
LEVEL
A Full - 3 8 mV
VCM = ±1.8V A 25 45 48 - dB ∆VCM= ±1.8V A 85 43 46 - dB ∆VCM = ±1.2V A -40 43 46 - dB ∆VPS = ±1.8V A 25 48 52 - dB ∆VPS = ±1.8V A 85 46 50 - dB ∆VPS = ±1.2V A -40 46 50 - dB
A Full - 10 25 µA
VPS = ±1.8V A 25 - 0.5 1 µA/V ∆VPS = ±1.8V A 85 - 0.8 3 µA/V ∆VPS = ±1.2V A -40 - 0.8 3 µA/V
VCM = ±1.8V A 85 0.5 1.3 - MΩ ∆VCM = ±1.2V A -40 0.5 1.3 - MΩ
A Full - 5 15 µA
VCM = ±1.8V A 25 - 3 6 µA/V ∆VCM = ±1.8V A 85 - 4 8 µA/ V ∆VCM = ±1.2V A -40 - 4 8 µA/V
TEMP.
(oC) MIN TYP MAX UNITS
2
Page 3
HFA1205
Electrical Specifications V
= ±5V, AV = +1, RF = 560, RL = 100, Unless Otherwise Specified (Continued)
SUPPLY
(NOTE 3)
PARAMETER TEST CONDITIONS
Inverting Input Bias Current Power Supply Sensitivity
TEST
LEVEL
VPS = ±1.8V A 25 - 2 5 µA/V ∆VPS = ±1.8V A 85 - 4 8 µA/V
TEMP.
(oC) MIN TYP MAX UNITS
VPS = ±1.2V A -40 - 4 8 µA/V Inverting Input Resistance C 25 - 60 - Input Capacitance C 25 - 1.6 - pF Input Voltage Common Mode Range
(Implied by VIO CMRR, +RIN, and -I tests)
BIAS
CMS
A 25, 85 ±1.8 ±2.4 - V A -40 ±1.2 ±1.7 - V
Input Noise Voltage Density f = 100kHz B 25 - 3.5 - nV/Hz Non-Inverting Input Noise Current Density f = 100kHz B 25 - 2.5 - pA/Hz Inverting Input Noise Current Density f = 100kHz B 25 - 20 - pA/Hz
TRANSFER CHARACTERISTICS
Open Loop Transimpedance Gain AV = -1 C 25 - 500 - k AC CHARACTERISTICS AV = +2, RF = 464, Unless Otherwise Specified
-3dB Bandwidth (V
OUT
= 0.2V
)A
P-P
= +1, +RS= 432 B 25 - 280 - MHz
V
AV = +2 B 25 - 400 - MHz
AV = -1, RF= 332 B 25 - 360 - MHz Full Power Bandwidth
(V
=5V
at AV= +2/-1,
P-P
at AV = +1)
4V
OUT
P-P
AV = +1, RS= 432 B 25 - 140 - MHz
AV = +2 B 25 - 125 - MHz
AV = -1, RF= 332 B 25 - 180 - MHz Gain Flatness (AV = +2,V
OUT
= 0.2V
) To 25MHz B 25 - ±0.02 - dB
P-P
To 50MHz B 25 - ±0.03 - dB Minimum Stable Gain A Full - 1 - V/V Crosstalk 5MHz B 25 - -60 - dB
10MHz B 25 - -54 - dB OUTPUT CHARACTERISTICS RF = 560, Unless Otherwise Specified Output Voltage Swing AV= -1, RL= 100 A25±3 ±3.4 - V
A Full ±2.8 ±3- V
Output Current AV = -1, RL = 50 A 25, 85 50 60 - mA
A -40 28 42 - mA Output Short Circuit Current B 25 - 90 - mA Closed Loop Output Impedance DC, AV = +2, RF = 464 B 25 - 0.07 - Second Harmonic Distortion
(AV= +2, RF= 464, V
OUT
Third Harmonic Distortion (AV= +2, RF= 464, V
OUT
=2V
=2V
P-P
P-P
)
)
10MHz B 25 - -50 - dBc 20MHz B 25 - -45 - dBc 10MHz B 25 - -55 - dBc
20MHz B 25 - -50 - dBc TRANSIENT CHARACTERISTICS AV = +2, RF = 464Ω, Unless Otherwise Specified Rise and Fall Times (V
OUT
= 0.5V
) Rise Time B 25 - 0.8 - ns
P-P
Fall Time B 25 - 1.25 - ns
3
Page 4
HFA1205
Electrical Specifications V
PARAMETER TEST CONDITIONS
Overshoot V
Slew Rate (V
= 4V
OUT
Slew Rate (V
Slew Rate (V
OUT
Settling Time (V
Overdrive Recovery Time VIN = ±2V B 25 - 10 - ns VIDEO CHARACTERISTICS AV = +2, RF = 464Ω, Unless Otherwise Specified Differential Gain (f = 3.58MHz) RL = 150 B 25 - 0.03 - %
Differential Phase (f = 3.58MHz) RL = 150 B 25 - 0.03 - Degrees
POWER SUPPLY CHARACTERISTICS
Power Supply Range C 25 ±4.5 - ±5.5 V Power Supply Current A 25 5.6 5.8 6.1 mA/
NOTE:
3. Test Level: A. Production Tested.; B. Typical or Guaranteed Limit Based on Characterization.; C. Design Typical for Information Only.
, AV = +1, +RS = 432)
P-P
= 5V
OUT
= 5V
, AV = -1, RF = 332)
P-P
= +2V to 0V step) To 0.1% B 25 - 15 - ns
OUT
, AV = +2) +SR B 25 - 1375 - V/µs
P-P
= ±5V, AV = +1, RF = 560, RL = 100, Unless Otherwise Specified (Continued)
SUPPLY
(NOTE 3)
TEST
LEVEL
= 0.5V
OUT
VIN t
RISE
+SR B 25 - 1050 - V/µs
-SR B 25 - 750 - V/µs
-SR B 25 - 875 - V/µs
+SR B 25 - 2250 - V/µs
-SR B 25 - 1275 - V/µs
To 0.05% B 25 - 20 - ns
To 0.02% B 25 - 30 - ns
RL = 75 B 25 - 0.03 - %
RL = 75 B 25 - 0.05 - Degrees
P-P
= 2.5ns
,
B 25-5- %
A Full 5.4 5.9 6.3 mA/
TEMP.
(oC) MIN TYP MAX UNITS
Op Amp
Op Amp
Application Information
Optimum Feedback Resistor
Although a current feedback amplifier’s bandwidth dependency on closed loop gain isn’t as severeas that of a voltage feedback amplifier,therecanbe an appreciable decrease in bandwidth at higher gains. This decrease may be minimized b y taking advantage of the current feedback amplifier’s unique relationship between bandwidth and R amplifiers require a feedback resistor, even for unity gain applications, and R
, in conjunction with the internal
F
compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier’ s bandwidth is inversely proportional to R for a 464 R
at a gain of +2. Decreasing RF decreases
F
. The HF A1205 design is optimized
F
stability, resulting in excessive peaking and overshoot (Note: Capacitive feedbac k will cause the same problems due to the feedback impedance decrease at higher frequencies). At
4
. All current feedback
F
higher gains the amplifier is more stable, so R
can be
F
decreased in a trade-off of stability for bandwidth. The table below lists recommended R
values for v arious
F
gains, and the expected bandwidth. For good channel-to­channel gain matching, it is recommended that all resistors (termination as well as gain setting) be ±1% tolerance or better. Note that a series input resistor, on +IN, is required fora gain of +1, to reduce gain peaking and increase stability.
GAIN
(ACL)R
-1 332 360 +1 464 (+RS = 432) 280 +2 464 400
F
()
BANDWIDTH
(MHz)
Page 5
HFA1205
Non-inverting Input Source Impedance
For best operation, the DC source impedance seen by the non-inverting input should be 50Ω. This is especially important in inverting gain configurations where the non­inverting input would normally be connected directly to GND.
PC Board Layout
The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The
use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must!
Attention should be given to decoupling the power supplies. A large value (10µF) tantalum in parallel with a small value (0.1µF) chip capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section.
Care must also be taken to minimize the capacitance to ground seen by the amplifier’s inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under traces connected to -IN, and connections to -IN should be kept as short as possible.
50
40
30
20
10
SERIES OUTPUT RESISTANCE ()
0
0 100 200 300 400
LOAD CAPACITANCE (pF)
FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs
LOAD CAPACITANCE
AV = +1
AV = +2
150 250 35050
Evaluation Board
The performance of the HFA1205 may be evaluated using the HA5023 Evaluation Board. The feedback and gain setting resistors must be replaced with the appropriate value (see “Optimum Feedback Resistor” section) for the gain being evaluated. Also, replace the two 0 series output resistors with 50 resistors.
To order evaluation boards (Part Number HA5023EVAL), please contact your local sales office.
Driving Capacitive Loads
Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier’s phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (R prior to the capacitance.
Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the R combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdampedresponse,while points below or left of the curve indicate areas of underdamped performance.
R
and CLform a low pass network at the output, thus
S
limiting system bandwidth well below the amplifier bandwidth of 280MHz (for A C
increases (as illustrated in the curves), the maximum
L
bandwidth is obtained without sacrificing stability. In spite of this, bandwidth decreases as the load capacitance increases. For example, at A the overall bandwidth is limited to 180MHz, and bandwidth drops to 70MHz at A
= +1, RS = 8, CL = 400pF.
V
) in series with the output
S
and C
S
= +1). By decreasing RS as
V
= +1, RS=62Ω, CL= 40pF,
V
L
5
Page 6
HFA1205
Typical Performance Curves
200
A
= +2
V
150
100
50
0
-50
-100
OUTPUT VOLTAGE (mV)
-150
-200
FIGURE 2. SMALL SIGNAL PULSE RESPONSE FIGURE 3. LARGE SIGNAL PULSE RESPONSE
V
= 200mV
OUT
3 0
-3
-6
NORMALIZED GAIN (dB)
1 10 100 1000
TIME (5ns/DIV.)
P-P
AV = +2 AV = +1
AV = +2
AV = -1
AV = +1
FREQUENCY (MHz)
V
= ±5V , RF = Optimum Value From “Apps Info” T able, TA = 25oC, RL = 100Ω,
SUPPLY
Unless Otherwise Specified
AV = -1
+180 +90 0
-90
-180 NORMALIZED PHASE (DEGREES)
2.0 AV = +2
1.5
1.0
0.5
0
-0.5
OUTPUT VOLTAGE (V)
-1.0
-1.5
-2.0
3 0
-3
-6
NORMALIZED GAIN (dB)
TIME (5ns/DIV.)
10 100
FREQUENCY (MHz)
AV = -1
AV = +1 AV = +2
30010.3
FIGURE 4. FREQUENCY RESPONSE FIGURE 5. FULL POWER BANDWIDTH
V
= 200mV
OUT
0.3
0.2
0.1 0
-0.1
-0.2
NORMALIZED GAIN (dB)
-0.3
1 10 100
P-P
AV = +2
FREQUENCY (MHz)
FIGURE 6. GAIN FLATNESS FIGURE 7. CROSSTALK vs FREQUENCY
6
AV = +1
-40
-45
-50
-55
-60
-65
-70
CROSSTALK (dB)
-75
-80
-85
RL = 100
RL = 1k
1 10 1000.3
FREQUENCY (MHz)
Page 7
Die Characteristics
HFA1205
DIE DIMENSIONS:
69 mils x 92 mils x 19 mils 1750µm x 2330µm x 483µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8k
Å ±0.4kÅ
Type: Metal 2: AICu(2%) Thickness: Metal 2: 16k
Å ±0.8kÅ
Metallization Mask Layout
NC
-IN1
HFA1205
OUT1
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
PASSIVATION:
Type: Nitride Thickness: 4k
Å ±0.5kÅ
TRANSISTOR COUNT:
180
NC
V+
+IN1
NC
NC
V-
NC
+IN2
OUT2
-IN2
NC
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only .Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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