Datasheet HFA1145 Datasheet (Intersil Corporation)

Page 1

HFA1145

Data Sheet September 1998 File Number 3955.3

330MHz, Low Power, Current Feedback Video Operational Ampliﬁer with Output Disable

The HFA1145 is a high speed, low power current feedback ampliﬁer built with Intersil’s proprietary complementary bipolar UHF-1 process.

This ampliﬁer features a TTL/CMOS compatible disable control, pin 8, which when pulled low reduces the supply current and forces the output into a high impedance state. This allows easy implementation of simple, low power video switching and routing systems. Component and composite video systems also beneﬁt from this op amp’s excellent gain ﬂatness, and good differential gain and phase speciﬁcations.

Multiplexed A/D applications will also ﬁnd the HFA1145 useful as the A/D driver/multiplexer.

The HFA1145 is a low power, high performance upgrade for the CLC410.

For Military grade product, please refer to the HFA1145/883 data sheet.

Ordering Information

PART NUMBER

(BRAND)

HFA1145IP -40 to 85 8 Ld PDIP E8.3 HFA1145IB

(H1145I) HFA11XXEVAL DIP Evaluation Board for High Speed Op Amps

TEMP. RANGE

(oC) PACKAGE

-40 to 85 8 Ld SOIC M8.15

PKG.

NO.

Features

• Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . 5.8mA

• High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 1MΩ

• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . . . . . . 330MHz

• Very Fast Slew Rate. . . . . . . . . . . . . . . . . . . . . . 1000V/µs

• Gain Flatness (to 75MHz) . . . . . . . . . . . . . . . . . . ±0.1dB

• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02%

• Differential Phase. . . . . . . . . . . . . . . . . . . . 0.03 Degrees

• Output Enable/Disable Time. . . . . . . . . . . . . . 180ns/35ns

• Pin Compatible Upgrade for CLC410

Applications

• Flash A/D Drivers

• Video Switching and Routing

• Professional Video Processing

• Video Digitizing Boards/Systems

• Multimedia Systems

• RGB Preamps

• Medical Imaging

• Hand Held and Miniaturized RF Equipment

• Battery Powered Communications

Pinout

-IN

+IN

V-

HFA1145

(PDIP, SOIC)

TOP VIEW

1 2

3 4

DISABLE

V+

OUT

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

Page 2

HFA1145

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11V

DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

SUPPLY

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V

Output Current (Note 1). . . . . . . . . . . . . . . . .Short Circuit Protected

30mA Continuous

60mA ≤ 50% Duty Cycle

ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >600V

Operating Conditions

Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Output is short circuit protectedto ground. Brief short circuits to ground will not degrade reliability, however continuous (100% dutycycle) output current must not exceed 30mA for maximum reliability.

is measured with the component mounted on an evaluation PC board in free air.

2. θ

Thermal Resistance (Typical, Note 2) θJA (oC/W)

PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170

Maximum Junction Temperature (Die Only). . . . . . . . . . . . . . . .175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC

Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

Electrical Speciﬁcations V

= ±5V, AV= +1, RF= 510Ω, RL = 100Ω, Unless Otherwise Speciﬁed

SUPPLY

(NOTE 3)

PARAMETER TEST CONDITIONS

TEST

LEVEL

TEMP.

(

C) MIN TYP MAX UNITS

INPUT CHARACTERISTICS

Input Offset Voltage A 25 - 2 5 mV

A Full - 3 8 mV Average Input Offset Voltage Drift B Full - 1 10 µV/ Input Offset Voltage

Common-Mode Rejection Ratio

Input Offset Voltage Power Supply Rejection Ratio

= ±1.8V A 25 47 50 - dB

∆V

= ±1.8V A 85 45 48 - dB

∆V

= ±1.2V A -40 45 48 - dB

∆V

= ±1.8V A 25 50 54 - dB

∆V

= ±1.8V A 85 47 50 - dB

∆V

= ±1.2V A -40 47 50 - dB

∆V

Non-Inverting Input Bias Current A 25 - 6 15 µA

A Full - 10 25 µA Non-Inverting Input Bias Current Drift B Full - 5 60 nA/ Non-Inverting Input Bias Current

Power Supply Sensitivity

Non-Inverting Input Resistance ∆V

= ±1.8V A 25 - 0.5 1 µA/V

∆V

= ±1.8V A 85 - 0.8 3 µA/V

∆V

= ±1.2V A -40 - 0.8 3 µA/V

∆V

= ±1.8V A 25 0.8 1.2 - MΩ

= ±1.8V A 85 0.5 0.8 - MΩ

∆V

= ±1.2V A -40 0.5 0.8 - MΩ

∆V

Inverting Input Bias Current A 25 - 2 7.5 µA

A Full - 5 15 µA Inverting Input Bias Current Drift B Full - 60 200 nA/ Inverting Input Bias Current

Common-Mode Sensitivity

= ±1.8V A 25 - 3 6 µA/V

∆V

= ±1.8V A 85 - 4 8 µA/V

∆V

= ±1.2V A -40 - 4 8 µA/V

∆V

Page 3

HFA1145

Electrical Speciﬁcations V

= ±5V, AV= +1, RF= 510Ω, RL = 100Ω, Unless Otherwise Speciﬁed (Continued)

SUPPLY

(NOTE 3)

PARAMETER TEST CONDITIONS

Inverting Input Bias Current Power Supply Sensitivity

TEST

LEVEL

∆VPS = ±1.8V A 25 - 2 5 µA/V

= ±1.8V A 85 - 4 8 µA/V

∆V

= ±1.2V A -40 - 4 8 µA/V

∆V

TEMP.

C) MIN TYP MAX UNITS

(

Inverting Input Resistance C 25 - 60 - Ω Input Capacitance C 25 - 1.6 - pF Input Voltage Common Mode Range

(Implied by V

CMRR, +RIN, and -I

tests)

BIAS

CMS

A 25, 85 ±1.8 ±2.4 - V

A -40 ±1.2 ±1.7 - V

Input Noise Voltage Density (Note 6) f = 100kHz B 25 - 3.5 - nV/√ Non-Inverting Input Noise Current Density

f = 100kHz B 25 - 2.5 - pA/√

(Note 6) Inverting Input Noise Current Density

f = 100kHz B 25 - 20 - pA/√

(Note 6)

TRANSFER CHARACTERISTICS

Open Loop Transimpedance Gain A AC CHARACTERISTICS R

= 510Ω, Unless Otherwise Speciﬁed

-3dB Bandwidth

= 0.2V

OUT

P-P

, Note 6)

= -1 C 25 - 500 - kΩ

AV = +1, +RS = 510Ω B 25 - 270 - MHz

B Full - 240 - MHz

= -1, RF = 425Ω B 25 - 300 - MHz

= +2 B 25 - 330 - MHz

B Full - 260 - MHz

= +10, RF = 180Ω B 25 - 130 - MHz

B Full - 90 - MHz Full Power Bandwidth

(V 4V

OUT

P-P

= 5V

at AV = +2/-1,

P-P

at AV = +1, Note 6)

Gain Flatness (A

= +2, V

OUT

= 0.2V

P-P

, Note 6)

AV = +1, +RS = 510Ω B 25 - 135 - MHz

= -1 B 25 - 140 - MHz

= +2 B 25 - 115 - MHz

To 25MHz B 25 - ±0.03 - dB

B Full - ±0.04 - dB

To 75MHz B 25 - ±0.11 - dB

B Full - ±0.22 - dB Gain Flatness

=+1, +RS=510Ω,V

OUT

=0.2V

P-P

,Note 6)

To 25MHz B 25 - ±0.03 - dB

To 75MHz B 25 - ±0.09 - dB Minimum Stable gain A Full - 1 - V/V OUTPUT CHARACTERISTICS A Output Voltage Swing

(Note 6)

Output Current (Note 6)

= +2, RF = 510Ω, Unless Otherwise Speciﬁed

= -1, RL = 100Ω A25±3 ±3.4 - V

= -1, RL = 50Ω A 25, 85 50 60 - mA

A Full ±2.8 ±3- V

A -40 28 42 - mA Output Short Circuit Current B 25 - 90 - mA Closed Loop Output Impedance (Note 6) DC B 25 - 0.08 - Ω

Hz Hz

Page 4

HFA1145

Electrical Speciﬁcations V

= ±5V, AV= +1, RF= 510Ω, RL = 100Ω, Unless Otherwise Speciﬁed (Continued)

SUPPLY

(NOTE 3)

PARAMETER TEST CONDITIONS

Second Harmonic Distortion (V

OUT

= 2V

P-P

, Note 6)

Third Harmonic Distortion

= 2V

OUT

Reverse Isolation (S TRANSIENT CHARACTERISTICS A

P-P

, Note 6)

, Note 6) 30MHz B 25 - -55 - dB

= +2, RF = 510Ω, Unless Otherwise Speciﬁed

Rise and Fall Times V

TEST

LEVEL

10MHz B 25 - -48 - dBc 20MHz B 25 - -44 - dBc 10MHz B 25 - -50 - dBc 20MHz B 25 - -45 - dBc

OUT

= 0.5V

P-P

B 25 - 1.1 - ns

TEMP.

C) MIN TYP MAX UNITS

(

B Full - 1.4 - ns Overshoot (Note 4)

= 0 to 0.5V, VIN t

OUT

Overshoot (Note 4)

= 0.5V

OUT

P-P

Slew Rate (V

OUT

= 4V

, AV = +1, +RS = 510Ω)

P-P

, VIN t

RISE

= 1ns)

+OS B 25 - 3 - %

-OS B 25 - 5 - % +OS B 25 - 3 - %

-OS B 25 - 11 - % +SR B 25 - 1000 - V/µs

B Full - 975 - V/µs

-SR (Note 5) B 25 - 650 - V/µs B Full - 580 - V/µs

Slew Rate

= 5V

OUT

, AV = +2)

P-P

+SR B 25 - 1400 - V/µs

B Full - 1200 - V/µs

-SR (Note 5) B 25 - 800 - V/µs B Full - 700 - V/µs

Slew Rate

= 5V

OUT

, AV = -1)

P-P

+SR B 25 - 2100 - V/µs

B Full - 1900 - V/µs

-SR (Note 5) B 25 - 1000 - V/µs B Full - 900 - V/µs

Settling Time

= +2V to 0V step, Note 6)

OUT

To 0.1% B 25 - 15 - ns To 0.05% B 25 - 23 - ns

To 0.02% B 25 - 30 - ns Overdrive Recovery Time V VIDEO CHARACTERISTICS A

= +2, RF = 510Ω, Unless Otherwise Speciﬁed

Differential Gain (f = 3.58MHz)

Differential Phase (f = 3.58MHz)

= ±2V B 25 - 8.5 - ns

= 150Ω B 25 - 0.02 - %

= 75Ω B 25 - 0.03 - %

= 150Ω B 25 - 0.03 - Degrees

= 75Ω B 25 - 0.05 - Degrees

DISABLE CHARACTERISTICS

Disabled Supply Current V

DISABLE

= 0V A Full - 3 4 mA DISABLE Input Logic Low A Full - - 0.8 V DISABLE Input Logic High A 25, 85 2.0 - - V

A -40 2.4 - - V

DISABLE Input Logic Low Current V

DISABLE

= 0V A Full - 100 200 µA

Page 5

HFA1145

Electrical Speciﬁcations V

PARAMETER TEST CONDITIONS

DISABLE Input Logic High Current V Output Disable Time (Note 6) V

Output Enable Time (Note 6) V

Disabled Output Capacitance V Disabled Output Leakage V

Off Isolation (V

DISABLE

POWER SUPPLY CHARACTERISTICS

Power Supply Range C 25 ±4.5 - ±5.5 V Power Supply Current (Note 6) A 25 - 5.8 6.1 mA

NOTES:

3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.

4. Undershoot dominates for output signal swings below GND (e.g. 0.5V

5. Slew rates are asymmetrical if theoutput swings below GND (e.g. a bipolar signal). Positiveunipolar output signals have symmetric positive and

6. See Typical Performance Curves for more information.

= 0V, VIN = 1V

condition. See the “Application Information” section for details.

negative slew rates comparable to the +SR specification. See the “Application Information” section, and the pulse response graphs for details.

P-P

, Note 6)

= ±5V, AV= +1, RF= 510Ω, RL = 100Ω, Unless Otherwise Speciﬁed (Continued)

SUPPLY

(NOTE 3)

TEST

LEVEL

DISABLE IN

DISABLE DISABLE DISABLE

OUT

At 5MHz B 25 - -75 - dB At 25MHz B 25 - -60 - dB

= 5V A Full - 1 15 µA

= ±1V,

= 2.4V to 0V

= ±1V,

= 0V to 2.4V

= 0V B 25 - 2.5 - pF

= 0V, VIN = 2V,

= ±3V

), yielding a higher overshoot limit compared to the V

P-P

B 25 - 35 - ns

B 25 - 180 - ns

A Full - 3 10 µA

A Full - 5.9 6.3 mA

TEMP.

C) MIN TYP MAX UNITS

(

OUT

= 0 to 0.5V

Application Information

Optimum Feedback Resistor

Although a current feedback amplifier’s bandwidth dependency on closed loop gain isn’t as severe as that of a voltage feedbac k amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier’s unique relationship between bandwidth and R current feedback amplifiers require a f eedback resistor, even for unity gain applications, and R

, in conjunction with the

internal compensation capacitor,sets the dominant pole ofthe frequency response. Thus, the amplifier’ s bandwidth is inverselyproportional toR for R

= 510Ω at a gain of +2. Decreasing RF decreases

. The HFA1145design isoptimized

stability, resulting in excessive peaking and overshoot (Note: Capacitive feedback will cause the same problems due to the feedback impedance decrease at higher frequencies). At higher gains, however, the amplifier is more stable so R be decreased in a trade-off of stability for bandwidth.

The table below lists recommended R

values for various

gains, and the expected bandwidth. For a gain of +1, a resistor (

) in series with +IN is required to reduce gain

peaking and increase stability.

can

. All

GAIN (ACL) R

-1 425 300 +1 510 (+RS = 510Ω) 270 +2 510 330 +5 200 300

+10 180 130

(Ω)

BANDWIDTH

(MHz)

Non-inverting Input Source Impedance

For best operation, the DC source impedance seen by the non-inverting input should be ≥50Ω. This is especially important in inverting gain conﬁgurations where the noninverting input would normally be connected directly to GND.

DISABLE Input TTL Compatibility

The HFA1145 derives an internal GND reference for the digital circuitry as long as the power supplies are symmetrical about GND. With symmetrical supplies the digital switching threshold (V

0.8)/2) is 1.4V, which ensures the TTL compatibility of the DISABLE input. If asymmetrical supplies (e.g. +10V,0V) are utilized, the switching threshold becomes:

V+ V-+

------------------- 1.4V+=

and the V

and VIL levels will be VTH± 0.6V, respectively.

= (VIH + VIL)/2 = (2.0 +

Page 6

HFA1145

Optional GND Pad (Die Use Only) for TTL Compatibility

The die version of the HFA1145 provides the user with a GND pad for setting the disable circuitry GND reference. With symmetrical supplies the GND pad may be left unconnected, or tied directly to GND. If asymmetrical supplies (e.g. +10V, 0V) are utilized, and TTL compatibility is desired, die users must connect the GND pad to GND. With an external GND, the DISABLE input is TTL compatible regardless of supply voltage utilized.

Pulse Undershoot and Asymmetrical Slew Rates

The HF A1145 utiliz es a quasi-complementary output stage to achieve high output current while minimizing quiescent supply current. In this approach, a composite device replaces the traditional PNP pulldown transistor . The composite device switches modes after crossing 0V, resulting in added distortion for signals swinging belo w ground, and an increased undershoot on the negative portion of the output wavef orm (See Figures 5, 8, and 11). This undershoot isn’t present for small bipolar signals, or large positive signals. Another artifact of the composite device is asymmetrical slew rates f or output signals with a negative voltage component. The slew r ate degradesas theoutput signalcrosses through0V (SeeFigures 5, 8, and 11), resulting in a slower over all negativ e sle w rate . Positiv e only signals ha v e symmetrical slew r ates as illustrated in the large signal positivepulse response graphs (See Figures 4, 7, and 10).

PC Board Layout

This ampliﬁer’s frequency response depends greatly on the care taken in designing the PC board. The use of low

inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must!

Attention should be given to decoupling the power supplies. A large value (10µF) tantalum in parallel with a small value (0.1µF) chip capacitor works well in most cases.

Terminated microstrip signal lines are recommended at the device’s input and output connections. Capacitance, parasitic or planned, connected to the output must be minimized, or isolated as discussed in the next section.

Care must also be taken to minimize the capacitance to ground at the ampliﬁer’s inverting input (-IN), as this capacitance causes gain peaking, pulse overshoot, and if large enough, instability. To reduce this capacitance, the designer should remove the ground plane under traces connected to -IN, and keep connections to -IN as short as possible.

An example of a good high frequency lay out is theEvaluation Board shown in Figure 2.

Driving Capacitive Loads

Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the ampliﬁer’s phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (R

) in series with the output

prior to the capacitance. Figure 1 details starting points for the selection of this

resistor. The points on the curve indicate the R

and C

combinations for the optimum bandwidth, stability, and settling time, but experimental ﬁne tuning is recommended. Picking a point above or to the right of the curve yields an overdampedresponse, while points below or left of the curve indicate areas of underdamped performance.

and CLform a low pass network at the output, thus limiting

system bandwidth well below the amplifier bandwidth of 270MHz (for A

= +1). By decreasing RSas CLincreases (as

illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. In spite of this, the bandwidth decreases as the load capacitance increases.For example, at A

= +1, RS = 62Ω, CL= 40pF, the overall bandwidth is

limited to 180MHz, and bandwidth drops to 75MHz at A

= +1, RS = 8Ω, CL= 400pF.

SERIES OUTPUT RESISTANCE (Ω)

0 100 200 300 400

FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs

LOAD CAPACITANCE

AV = +1

AV = +2

150 250 35050

LOAD CAPACITANCE (pF)

Evaluation Board

The performance of the HFA1145 may be evaluated using the HFA11XX Evaluation Board.

The layout and schematic of the board are shown in Figure

2. The V pin, but note that this connection has no 50 order evaluation boards (part number HFA11XXEVAL), please contact your local sales ofﬁce.

connection may be used to exercise the DISABLE

Ω termination. To

Page 7

+IN

HFA1145

OUT

V+

V-

GND

FIGURE 2A. TOP LAYOUT

10µF

FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT

T ypical Performance Curves V

200

AV = +1

= 510Ω

150

100

-50

FIGURE 2B. TOP LAYOUT

510 510

50Ω

0.1µF

SUPPLY

2 3 4

-5V

GND

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω,Unless Otherwise Speciﬁed

0.1µF

50Ω

6 5

GND

3.0

2.5

2.0

1.5

1.0

0.5

10µF

OUT V

AV = +1 +RS = 510Ω

+5V

-100

OUTPUT VOLTAGE (mV)

-150

-200 TIME (5ns/DIV.)

OUTPUT VOLTAGE (V)

-0.5

-1.0 TIME (5ns/DIV.)

FIGURE 3. SMALL SIGNAL PULSE RESPONSE FIGURE 4. LARGE SIGNAL POSITIVE PULSE RESPONSE

Page 8

HFA1145

T ypical Performance Curves V

2.0 AV = +1

+RS = 510Ω

1.5

1.0

0.5

-0.5

-1.0

OUTPUT VOLTAGE (V)

-1.5

-2.0 TIME (5ns/DIV.)

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω,Unless Otherwise Speciﬁed (Continued)

SUPPLY

200

AV = +2

150

100

-50

-100

OUTPUT VOLTAGE (mV)

-150

-200 TIME (5ns/DIV.)

FIGURE 5. LARGE SIGNAL BIPOLAR PULSE RESPONSE FIGURE 6. SMALL SIGNAL PULSE RESPONSE

3.0 AV = +2 AV = +2

2.5

2.0

1.5

2.0

1.5

1.0

0.5

OUTPUT VOLTAGE (V)

-0.5

-1.0

TIME (5ns/DIV.)

1.0

0.5

-0.5

-1.0

OUTPUT VOLTAGE (V)

-1.5

-2.0

TIME (5ns/DIV.)

FIGURE 7. LARGE SIGNAL POSITIVE PULSE RESPONSE FIGURE 8. LARGE SIGNAL BIPOLAR PULSE RESPONSE

200

150

100

-50

-100

OUTPUT VOLTAGE (mV)

AV = +10 R

= 180Ω

3.0

2.5

2.0

1.5

1.0

0.5

OUTPUT VOLTAGE (V)

AV = +10 R

= 180Ω

-150

-200 TIME (5ns/DIV.)

-0.5

-1.0 TIME (5ns/DIV.)

FIGURE 9. SMALL SIGNAL PULSE RESPONSE FIGURE 10. LARGE SIGNAL POSITIVE PULSE RESPONSE

Page 9

HFA1145

T ypical Performance Curves V

2.0 AV = +10

1.5

1.0

0.5

-0.5

OUTPUT VOLTAGE (V)

-1.0

-1.5

-2.0

= 180Ω

TIME (5ns/DIV.)

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω,Unless Otherwise Speciﬁed (Continued)

SUPPLY

DISABLE

800mV/DIV.

(0.4V to 2.4V)

OUT

400mV/DIV.

AV = +1, VIN= 1V

TIME (50ns/DIV.)

FIGURE 11. LARGE SIGNAL BIPOLAR PULSE RESPONSE FIGURE 12. OUTPUT ENABLE AND DISABLE RESPONSE

= 200mV

+RS = 510Ω (+1)

GAIN (dB)

-3

OUT

= 0Ω (-1)

P-P

AV = +1

AV = -1

-3

AV = +10

AV = +5

AV = +2

0.3 1 10 100 500 FREQUENCY (MHz)

FIGURE 13. FREQUENCY RESPONSE

AV = +2

3 0

-3

NORMALIZED GAIN (dB)

0.3 1 10 100 500

OUT

= 1.5V

OUT

FREQUENCY (MHz)

= 1.5V

= 5V

OUT

P-P P-P

= 200mV

P-P

OUT

= 200mV

P-P

= 5V

AV = -1

AV = +1

P-P

NORMALIZED GAIN (dB)

90 180

270

NORMALIZED PHASE (DEGREES)

0.3 1 10 100 500

3 0

-3

0 90 180

270

PHASE (DEGREES)

NORMALIZED GAIN (dB)

= 200mV

OUT

RF = 510Ω (+2) R

= 200Ω (+5)

= 180Ω (+10)

P-P

FREQUENCY (MHz)

AV = +5

AV = +2

AV = +10

90 180

270

FIGURE 14. FREQUENCY RESPONSE

AV = -1

= 4V = 5V

(+1)

P-P

(-1, +2)

P-P

FREQUENCY (MHz)

AV = +1

AV = +2

OUT

= 510Ω (+1)

1 10 100 200

PHASE (DEGREES)

FIGURE 15. FREQUENCY RESPONSE FOR VARIOUSOUTPUT

VOLTAGES

FIGURE 16. FULL POWER BANDWIDTH

Page 10

HFA1145

T ypical Performance Curves V

= 200mV

OUT

AV = +2

-3

NORMALIZED GAIN (dB)

0.3 1 10 100 500

P-P

FREQUENCY (MHz)

RL = 500Ω

RL = 50Ω

RL = 100Ω

RL = 1kΩ RL = 500Ω

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω,Unless Otherwise Speciﬁed (Continued)

SUPPLY

RL = 1kΩ

RL = 50Ω

FIGURE 17. FREQUENCY RESPONSE FOR VARIOUSLOAD

RESISTORS

= 200mV

OUT

+RS = 510Ω (+1)

0.25

0.20

0.15

0.10

0.05 0

-0.05

NORMALIZED GAIN (dB)

-0.10

P-P

AV = +2

AV = +1

0 90 180 270

PHASE (DEGREES)

500

400

300

200

BANDWIDTH (MHz)

100

-100 -50 0 50 100 150

AV = +2

= +1

= +10

TEMPERATURE (oC)

= 200mV

OUT

RF = 180Ω (+10) +RS = 510Ω (+1)

FIGURE 18. -3dB BANDWIDTH vs TEMPERATURE

-30 AV = +2

-40

= 1V

P-P

-50

-60

-70

-80

OFF ISOLATION (dB)

-90

P-P

11075

FREQUENCY (MHz)

FIGURE 19. GAIN FLATNESS FIGURE 20. OFF ISOLATION

-40 V

= 2V

OUT

-50

-60

-70

-80

-90

REVERSE ISOLATION (dB)

0.3 1 10 100

P-P

FREQUENCY (MHz)

AV = +1, +2

AV = -1

OUTPUT IMPEDANCE (Ω)

100

0.01

FIGURE 21. REVERSE ISOLATION (S12)

0.3 1 10 100 FREQUENCY (MHz)

AV = +2

0.1

0.3 1 10 100 FREQUENCY (MHz)

1000

FIGURE 22. ENABLED OUTPUT IMPEDANCE

Page 11

HFA1145

T ypical Performance Curves V

0.8

0.6

0.4

0.2

0.1 0

-0.2

-0.4

SETTLING ERROR (%)

-0.6

-0.8

3 8 13 18 23 28 33 38 43 48

TIME (ns)

SUPPLY

FIGURE 23. SETTLING RESPONSE FIGURE 24. SECOND HARMONIC DISTORTION vs P

-30 AV = +2

-40

20MHz

-50

DISTORTION (dBc)

-60

-70

-5 0 5 10 15 OUTPUT POWER (dBm)

10MHz

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω,Unless Otherwise Speciﬁed (Continued)

-30 AV = +2

-40

20MHz

-50

10MHz

DISTORTION (dBc)

-60

-70

-5 0 5 10 15 OUTPUT POWER (dBm)

3.6 A

= -1

3.5

3.4

3.3

3.2

3.1

3.0

2.9

OUTPUT VOLTAGE (V)

2.8

2.7

2.6

-50 -25 0 25 50 75 100 125

OUT

|-V

| (RL= 100Ω)

OUT

(RL= 100Ω)

(RL= 50Ω)

|-V

OUT

TEMPERATURE (

| (RL= 50Ω)

OUT

AV = +2

= 2V

OUT

FIGURE 25. THIRD HARMONIC DISTORTION vs P

100

NOISE VOLTAGE (nV/√Hz)

0.1 1 10 100 FREQUENCY (kHz)

NI+

OUT

100

NI-

Hz)

NOISE CURRENT (pA/√

FIGURE 26. OUTPUT VOLTAGE vs TEMPERATURE

6.1

6.0

5.9

5.8

5.7

POWER SUPPLY CURRENT (mA)

5.6

3.5 4 4.5 5 5.5 6 6.5 7 7.5

POWER SUPPLY VOLTAGE (±V)

FIGURE 27. INPUT NOISE CHARACTERISTICS FIGURE 28. SUPPLY CURRENT vs SUPPLY VOLTAGE

Page 12

Die Characteristics

HFA1145

DIE DIMENSIONS:

59 mils x 59 mils x 19 mils 1500µm x 1500µm x 483µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8k

Å ±0.4kÅ

Type: Metal 2: AICu(2%) Thickness: Metal 2: 16k

Å ±0.8kÅ

Metallization Mask Layout

-IN

HFA1145

PASSIVATION:

Type: Nitride Thickness: 4k

Å ±0.5kÅ

TRANSISTOR COUNT:

SUBSTRATE POTENTIAL (Powered Up):

Floating (Recommend Connection to V-)

DISABLE

V+

OUT

+IN

V-

OPTIONAL GND (NOTE)

NOTE: This pad is notbonded out on packaged units. Die users mayset a GNDreference,via thispad,to ensure the TTL compatibility of the DIS input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V). See the “Application Information” section for details.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com