Datasheet HFA1105 Datasheet (Intersil Corporation)

Page 1

HFA1105

September 1998 File Number 3395.6

330MHz, Low Power, Current Feedback Video Operational Ampliﬁer

The HFA1105 is a high speed, low power current feedback ampliﬁer built with Intersil’s proprietary complementary bipolar UHF-1 process.

This ampliﬁer features an excellent combination of low power dissipation (58mW) and high performance. The slew rate, bandwidth, and low output impedance (0.08Ω) make this ampliﬁer a good choice for driving Flash ADCs. Component and composite video systems also beneﬁt from this op amp’s excellent gain ﬂatness, and good differential gain and phase speciﬁcations. The HFA1105 is ideal for interfacing to Intersil’s line of video crosspoint switches (HA4201, HA4600, HA4314, HA4404, HA4344), to create high performance, low power switchers and routers.

The HFA1105 is a low power, high performance upgrade for the CLC406. For a comparable ampliﬁer with output disable or output limiting functions, please see the data sheets for the HFA1145 and HFA1135 respectively.

For Military grade product, please refer to the HFA1145/883 data sheet.

Ordering Information

PART NUMBER

(BRAND)

HFA1105IP -40 to 85 8 Ld PDIP E8.3 HFA1105IB

(H1105I) HFA11XXEVAL DIP Evaluation Board for High Speed

TEMP.

RANGE (oC) PACKAGE PKG. NO.

-40 to 85 8 Ld SOIC M8.15

Op Amps

Features

• Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . 5.8mA

• High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 1MΩ

• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . . . . . . 330MHz

• Very Fast Slew Rate. . . . . . . . . . . . . . . . . . . . . . 1000V/µs

• Gain Flatness (to 75MHz) . . . . . . . . . . . . . . . . . . . . 0.1dB

• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02%

• Differential Phase. . . . . . . . . . . . . . . . . . . . 0.03 Degrees

• Pin Compatible Upgrade for CLC406

Applications

• Flash A/D Drivers

• Video Switching and Routing

• Professional Video Processing

• Video Digitizing Boards/Systems

• Multimedia Systems

• RGB Preamps

• Medical Imaging

• Hand Held and Miniaturized RF Equipment

• Battery Powered Communications

Pinout

HFA1105

(PDIP, SOIC)

TOP VIEW

-IN

+IN

1 2

3 4

V-

V+

OUT

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Page 2

HFA1105

Absolute Maximum Ratings Thermal Information

Supply Voltage (V+ to V-). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11V

DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V

Output Current (Note 1). . . . . . . . . . . . . . . . .Short Circuit Protected

30mA Continuous

60mA ≤ 50% Duty Cycle

ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >600V

SUPPLY

Operating Conditions

Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle) output current must not exceed 30mA for maximum reliability.

2. θJA is measured with the component mounted on an evaluation PC board in free air.

Thermal Resistance (Typical, Note 2) θJA (oC/W)

PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170

Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC

Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

Electrical Speciﬁcations V

PARAMETER TEST CONDITIONS

INPUT CHARACTERISTICS

Input Offset Voltage A 25 - 2 5 mV

Average Input Offset Voltage Drift B Full - 1 10 µV/oC Input Offset Voltage

Common-Mode Rejection Ratio

Input Offset Voltage Power Supply Rejection Ratio

Non-Inverting Input Bias Current A 25 - 6 15 µA

Non-Inverting Input Bias Current Drift B Full - 5 60 nA/oC Non-Inverting Input Bias Current

Power Supply Sensitivity

Non-Inverting Input Resistance ∆VCM = ±1.8V A 25 0.8 1.2 - MΩ

Inverting Input Bias Current A 25 - 2 7.5 µA

Inverting Input Bias Current Drift B Full - 60 200 nA/oC Inverting Input Bias Current

Common-Mode Sensitivity

Inverting Input Bias Current Power Supply Sensitivity

= ±5V, AV = +1, RF = 510Ω, RL = 100Ω, Unless Otherwise Speciﬁed

SUPPLY

(NOTE 3)

TEST

LEVEL

A Full - 3 8 mV

∆VCM = ±1.8V A 25 47 50 - dB ∆VCM = ±1.8V A 85 45 48 - dB ∆VCM = ±1.2V A -40 45 48 - dB ∆VPS = ±1.8V A 25 50 54 - dB ∆VPS = ±1.8V A 85 47 50 - dB ∆VPS = ±1.2V A -40 47 50 - dB

A Full - 10 25 µA

∆VPS = ±1.8V A 25 - 0.5 1 µA/V ∆VPS = ±1.8V A 85 - 0.8 3 µA/V ∆VPS = ±1.2V A -40 - 0.8 3 µA/V

∆VCM = ±1.8V A 85 0.5 0.8 - MΩ ∆VCM = ±1.2V A -40 0.5 0.8 - MΩ

A Full - 5 15 µA

∆VCM = ±1.8V A 25 - 3 6 µA/V ∆VCM = ±1.8V A 85 - 4 8 µA/V ∆VCM = ±1.2V A -40 - 4 8 µA/V ∆VPS = ±1.8V A 25 - 2 5 µA/V ∆VPS = ±1.8V A 85 - 4 8 µA/V ∆VPS = ±1.2V A -40 - 4 8 µA/V

TEMP.

(oC) MIN TYP MAX UNITS

Page 3

HFA1105

Electrical Speciﬁcations V

PARAMETER TEST CONDITIONS

= ±5V, AV = +1, RF = 510Ω, RL = 100Ω, Unless Otherwise Speciﬁed (Continued)

SUPPLY

(NOTE 3)

TEST

LEVEL

TEMP.

(oC) MIN TYP MAX UNITS

Inverting Input Resistance C 25 - 60 - Ω Input Capacitance C 25 - 1.6 - pF Input Voltage Common Mode Range

(Implied by VIO CMRR, +RIN, and -I

CMS Tests)

BIAS

A 25, 85 ±1.8 ±2.4 - V

A -40 ±1.2 ±1.7 - V Input Noise Voltage Density (Note 6) f = 100kHz B 25 - 3.5 - nV/√Hz Non-Inverting Input Noise Current Density (Note 6) f = 100kHz B 25 - 2.5 - pA/√Hz Inverting Input Noise Current Density (Note 6) f = 100kHz B 25 - 20 - pA/√Hz

TRANSFER CHARACTERISTICS

Open Loop Transimpedance Gain AV = -1 C 25 - 500 - kΩ AC CHARACTERISTICS RF = 510Ω, Unless Otherwise Speciﬁed

-3dB Bandwidth (V

= 0.2V

OUT

P-P

, Note 6)

AV = +1, +RS = 510Ω B 25 - 270 - MHz

B Full - 240 - MHz

AV = -1, RF = 425Ω B 25 - 300 - MHz AV = +2 B 25 - 330 - MHz

B Full - 260 - MHz

AV = +10, RF = 180Ω B 25 - 130 - MHz

B Full - 90 - MHz Full Power Bandwidth

(V 4V

OUT

P-P

= 5V

at AV = +2/-1,

P-P

at AV = +1, Note 6)

Gain Flatness (AV = +2, V

OUT

= 0.2V

P-P

, Note 6)

AV = +1, +RS = 510Ω B 25 - 135 - MHz AV = -1 B 25 - 140 - MHz AV = +2 B 25 - 115 - MHz To 25MHz B 25 - ±0.03 - dB

B Full - ±0.04 - dB

To 75MHz B 25 - ±0.11 - dB

B Full - ±0.22 - dB Gain Flatness

(AV = +1, +RS = 510Ω, V

OUT

= 0.2V

P-P

, Note 6)

To 25MHz B 25 - ±0.03 - dB

To 75MHz B 25 - ±0.09 - dB Minimum Stable gain A Full - 1 - V/V OUTPUT CHARACTERISTICS AV = +2, RF = 510Ω, Unless Otherwise Speciﬁed Output Voltage Swing (Note 6) AV = -1, RL = 100Ω A25±3 ±3.4 - V

A Full ±2.8 ±3- V

Output Current (Note 6) AV = -1, RL = 50Ω A 25, 85 50 60 - mA

A -40 28 42 - mA Output Short Circuit Current B 25 - 90 - mA Closed Loop Output Impedance (Note 6) DC B 25 - 0.08 - Ω Second Harmonic Distortion

OUT

= 2V

P-P

, Note 6)

Third Harmonic Distortion (V

OUT

= 2V

P-P

, Note 6)

10MHz B 25 - -48 - dBc 20MHz B 25 - -44 - dBc 10MHz B 25 - -50 - dBc

20MHz B 25 - -45 - dBc Reverse Isolation (S12, Note 6) 30MHz B 25 - -55 - dB TRANSIENT CHARACTERISTICS AV = +2, RF = 510Ω, Unless Otherwise Speciﬁed Rise and Fall Times V

OUT

= 0.5V

P-P

B 25 - 1.1 - ns B Full - 1.4 - ns

Page 4

HFA1105

Electrical Speciﬁcations V

PARAMETER TEST CONDITIONS

Overshoot (Note 4) (V

= 0 to 0.5V, VIN t

OUT

Overshoot (Note 4) (V

= 0.5V

OUT

Slew Rate (V

= 4V

OUT

Slew Rate (V

= 5V

OUT

Slew Rate (V

= 5V

OUT

Settling Time (V

= +2V to 0V step, Note 6)

OUT

Overdrive Recovery Time VIN = ±2V B 25 - 8.5 - ns VIDEO CHARACTERISTICS AV = +2, RF = 510Ω, Unless Otherwise Speciﬁed Differential Gain

(f = 3.58MHz) Differential Phase

(f = 3.58MHz)

POWER SUPPLY CHARACTERISTICS

Power Supply Range C 25 ±4.5 - ±5.5 V Power Supply Current (Note 6) A 25 - 5.8 6.1 mA

NOTES:

3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.

4. Undershoot dominates for output signal swings below GND (e.g., 0.5V condition. See the “Application Information” section for details.

5. Slew rates are asymmetrical if the output swings belowGND(e.g.abipolarsignal). Positive unipolar output signals have symmetric positive and negative slew rates comparable to the +SR specification. See the “Application Information” section, and the pulse response graphs for details.

6. See Typical Performance Curves for more information.

, VIN t

P-P

, AV = +1, +RS = 510Ω)

P-P

, AV = +2)

P-P

, AV = -1)

P-P

RISE

= 1ns)

= ±5V, AV = +1, RF = 510Ω, RL = 100Ω, Unless Otherwise Speciﬁed (Continued)

SUPPLY

(NOTE 3)

TEST

LEVEL

+OS B 25 - 3 - %

-OS B 25 - 5 - % +OS B 25 - 3 - %

-OS B 25 - 11 - % +SR B 25 - 1000 - V/µs

B Full - 975 - V/µs

-SR (Note 5) B 25 - 650 - V/µs B Full - 580 - V/µs

+SR B 25 - 1400 - V/µs

B Full - 1200 - V/µs

-SR (Note 5) B 25 - 800 - V/µs B Full - 700 - V/µs

+SR B 25 - 2100 - V/µs

B Full - 1900 - V/µs

-SR (Note 5) B 25 - 1000 - V/µs B Full - 900 - V/µs

To 0.1% B 25 - 15 - ns To 0.05% B 25 - 23 - ns To 0.02% B 25 - 30 - ns

RL = 150Ω B 25 - 0.02 - % RL = 75Ω B 25 - 0.03 - % RL = 150Ω B 25 - 0.03 - Degrees RL = 75Ω B 25 - 0.05 - Degrees

A Full - 5.9 6.3 mA

), yielding a higher overshoot limit compared to the V

P-P

TEMP.

(oC) MIN TYP MAX UNITS

OUT

= 0 to 0.5V

Application Information

Optimum Feedback Resistor

Although a current feedback ampliﬁer’s bandwidth dependency on closed loop gain isn’t as severe as that of a voltage feedback ampliﬁer, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback

ampliﬁer’s unique relationship between bandwidth and R

All current feedback ampliﬁers require a feedback resistor, even for unity gain applications, and R

, in conjunction with

the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the ampliﬁer’s bandwidth is inversely proportional to R optimized for R

= 510Ω at a gain of +2. Decreasing R

. The HFA1105 design is

decreases stability, resulting in excessive peaking and

Page 5

HFA1105

overshoot (Note: Capacitive feedback will cause the same problemsdue to the feedbackimpedance decrease at higher frequencies). At higher gains, however, the ampliﬁer is more stable so R

can be decreased in a trade-off of stability for

bandwidth. The table below lists recommended R

values for various

gains, and the expected bandwidth. For a gain of +1, a resistor (

) in series with +IN is required to reduce gain

peaking and increase stability.

GAIN

(ACL)R

-1 425 300 +1 510 (+RS = 510Ω) 270 +2 510 330 +5 200 300

+10 180 130

(Ω)

BANDWIDTH

(MHz)

Non-Inverting Input Source Impedance

For best operation, the DC source impedance seen by the non-inverting input should be ≥50Ω. This is especially important in inverting gain conﬁgurations where the noninverting input would normally be connected directly to GND.

Pulse Undershoot and Asymmetrical Slew Rates

The HFA1105 utilizes a quasi-complementary output stage to achievehighoutput current while minimizing quiescent supply current. In this approach, a composite device replaces the traditional PNP pulldown transistor. The composite device switches modes after crossing 0V, resulting in added distortion for signals swinging below ground, and an increased undershoot on the negative portion of the output waveform (See Figures 5, 8, and 11). This undershoot isn’t present for small bipolar signals, or large positive signals. Another artifact of the composite device is asymmetrical slew rates for output signals with a negative voltage component. The slew rate degrades as the output signal crosses through 0V (See Figures 5, 8, and 11), resulting in a slower overall negative slew rate. Positive only signals have symmetrical slew rates as illustrated in the large signal positive pulse response graphs (See Figures 4, 7, and 10).

Terminated microstrip signal lines are recommended at the device’s input and output connections. Capacitance, parasitic or planned, connected to the output must be minimized, or isolated as discussed in the next section.

Care must also be taken to minimize the capacitance to ground at the ampliﬁer’s inverting input (-IN), as this capacitance causes gain peaking, pulse overshoot, and if large enough, instability. To reduce this capacitance, the designer should remove the ground plane under traces connected to

-IN, and keep connections to -IN as short as possible. An example of a good high frequency layout is the

Evaluation Board shown in Figure 2.

Driving Capacitive Loads

Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the ampliﬁer’s phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (R prior to the capacitance.

Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the R combinations for the optimum bandwidth, stability, and settling time, but experimental ﬁne tuning is recommended. Picking a point above or to the right of the curve yields an overdampedresponse,while points below or left of the curve indicate areas of underdamped performance.

and CLform a low pass network at the output, thus limiting

system bandwidth well below the amplifier bandwidth of 270MHz (for A

= +1). By decreasing RSas CLincreases (as

illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. In spite of this, the bandwidth decreases as the load capacitance increases. For example, at A

= +1, RS=62Ω,CL= 40pF, the overallbandwidth is limited

to 180MHz, and bandwidth drops to 75MHz at A R

=8Ω, CL = 400pF.

) in series with the output

and C

= +1,

PC Board Layout

The ampliﬁer’s frequency response depends greatly on the care taken in designing the PC board. The use of low

inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must!

Attention should be given to decoupling the power supplies. A large value (10µF) tantalum in parallel with a small value (0.1µF) chip capacitor works well in most cases.

Page 6

HFA1105

SERIES OUTPUT RESISTANCE (Ω)

0 100 200 300 400

LOAD CAPACITANCE (pF)

AV = +1

AV = +2

150 250 35050

FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs

LOAD CAPACITANCE

Evaluation Board

The performance of the HFA1105 may be evaluated using the HFA11XX Evaluation Board.

The layout and schematic of the board are shown in Figure

2. To order evaluationboards (part number HFA11XXEVAL), please contact your local sales ofﬁce.

10µF

510 510

50Ω

0.1µF

-5V

1 2 3 4

8 7 6 5

GND

0.1µF 50Ω

GND

OUT V

10µF

+5V

FIGURE 2C. SCHEMATIC

FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT

+IN

FIGURE 2A. TOP LAYOUT

OUT

V+

V-

GND

FIGURE 2B. BOTTOM LAYOUT

Page 7

HFA1105

T ypical P erf ormance Curves

200

AV = +1 +R

= 510Ω

150

100

-50

-100

OUTPUT VOLTAGE (mV)

-150

-200

2.0

1.5

1.0

TIME (5ns/DIV.)

FIGURE 3. SMALL SIGNAL PULSE RESPONSE FIGURE 4. LARGE SIGNAL POSITIVE PULSE RESPONSE

AV = +1 +RS = 510Ω

SUPPLY

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified

3.0 AV = +1

+RS = 510Ω

2.5

2.0

1.5

1.0

0.5

OUTPUT VOLTAGE (V)

-0.5

-1.0 TIME (5ns/DIV.)

200

AV = +2

150

100

0.5

-0.5

-1.0

OUTPUT VOLTAGE (V)

-1.5

-2.0

TIME (5ns/DIV.)

-50

-100

OUTPUT VOLTAGE (mV)

-150

-200 TIME (5ns/DIV.)

FIGURE 5. LARGE SIGNAL BIPOLAR PULSE RESPONSE FIGURE 6. SMALL SIGNAL PULSE RESPONSE

3.0

2.5

2.0

1.5

1.0

0.5

OUTPUT VOLTAGE (V)

AV = +2 AV = +2

2.0

1.5

1.0

0.5

-0.5

OUTPUT VOLTAGE (V)

-1.0

-0.5

-1.0 TIME (5ns/DIV.)

-1.5

-2.0 TIME (5ns/DIV.)

FIGURE 7. LARGE SIGNAL POSITIVE PULSE RESPONSE FIGURE 8. LARGE SIGNAL BIPOLAR PULSE RESPONSE

Page 8

HFA1105

T ypical P erf ormance Curves

200

AV = +10 R

150

100

-50

-100

OUTPUT VOLTAGE (mV)

-150

-200

2.0

1.5

1.0

E (V)

0.5

= 180Ω

TIME (5ns/DIV.)

FIGURE 9. SMALL SIGNAL PULSE RESPONSE FIGURE 10. LARGE SIGNAL POSITIVE PULSE RESPONSE

AV = +10 R

= 180Ω

SUPPLY

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued)

3.0 AV = +10

= 180Ω

2.5

2.0

1.5

1.0

0.5

OUTPUT VOLTAGE (V)

-0.5

-1.0 TIME (5ns/DIV.)

= 200mV

+RS = 510Ω (+1)

-3

GAIN (dB)

OUT

= 0Ω (-1)

P-P

AV = +1

AV = -1

P-P

0 90 180

270

NORMALIZED PHASE (DEGREES)

0 90 180

270

PHASE (DEGREES)

OUT

AV = -1

AV = +1

= 200mV

P-P

= 5V

-0.5

-1.0

OUTPUT VOLTA

-1.5

-2.0 TIME (5ns/DIV.)

FIGURE 11. LARGE SIGNAL BIPOLAR PULSE RESPONSE

-3

NORMALIZED GAIN (dB)

= 200mV

OUT

RF = 510Ω (+2) R

= 200Ω (+5)

= 180Ω (+10)

0.3 1 10 100 500

FIGURE 13. FREQUENCY RESPONSE FIGURE 14. FREQUENCY RESPONSE FOR VARIOUSOUTPUT

P-P

FREQUENCY (MHz)

AV = +10

AV = +5

AV = +10

AV = +5

AV = +2

90 180

270

PHASE (DEGREES)

0.3 1 10 100 500 FREQUENCY (MHz)

FIGURE 12. FREQUENCY RESPONSE

AV = +2

3 0

= 1.5V

-3

NORMALIZED GAIN (dB)

0.3 1 10 100 500

OUT

FREQUENCY (MHz)

= 5V

OUT

= 1.5V

P-P

= 200mV

P-P

VOLTAGES

Page 9

HFA1105

T ypical P erf ormance Curves

3 0

= 4V = 5V

P-P P-P

(+1)

(-1, +2)

FREQUENCY (MHz)

OUT

-3 V

OUT

+RS = 510Ω (+1)

NORMALIZED GAIN (dB)

1 10 100 200

SUPPLY

AV = +1

AV = +2

FIGURE 15. FULL POWER BANDWIDTH FIGURE 16. FREQUENCY RESPONSE FOR VARIOUS LOAD

500

400

300

200

BANDWIDTH (MHz)

100

-100 -50 0 50 100 150

AV = +2

= +1

= +10

TEMPERATURE (oC)

= 200mV

OUT

RF = 180Ω (+10) +RS = 510Ω (+1)

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued)

= 200mV

AV = -1

OUT

AV = +2

-3

NORMALIZED GAIN (dB)

0.3 1 100 500

P-P

FREQUENCY (MHz)

RL = 500Ω

RL = 50Ω

RL = 100Ω

RL = 1kΩ

RL = 500Ω

RL = 1kΩ

RL = 50Ω

RL = 100Ω

RESISTORS

= 200mV

P-P

OUT

+RS = 510Ω (+1)

0.25

0.20

0.15

0.10

0.05 0

-0.05

NORMALIZED GAIN (dB)

-0.10

11075

P-P

AV = +2

AV = +1

FREQUENCY (MHz)

0 90 180 270

PHASE (DEGREES)

FIGURE 17. -3dB BANDWIDTH vs TEMPERATURE

-40 V

= 2V

OUT

-50

-60

-70

-80

-90

REVERSE ISOLATION (dB)

0.3 1 10 100

P-P

AV = +1, +2

FREQUENCY (MHz)

FIGURE 19. REVERSE ISOLATION FIGURE 20. OUTPUT IMPEDANCE

AV = -1

FIGURE 18. GAIN FLATNESS

AV = +2

100

0.1

0.01

OUTPUT IMPEDANCE (Ω)

0.3 1 10 100 FREQUENCY (MHz)

1000

Page 10

HFA1105

T ypical P erf ormance Curves

0.8

0.6

0.4

0.2

0.1 0

-0.2

-0.4

SETTLING ERROR (%)

-0.6

-0.8

3 8 13 18 23 28 33 38 43 48

TIME (ns)

SUPPLY

FIGURE 21. SETTLING RESPONSE FIGURE 22. SECOND HARMONIC DISTORTION vs P

-30 AV = +2

-40

20MHz

-50

DISTORTION (dBc)

-60

-70

-5 0 5 10 15 OUTPUT POWER (dBm)

10MHz

= ±5V, RF = 510Ω, TA = 25oC, RL = 100Ω, Unless Otherwise Specified (Continued)

-30 AV = +2

-40

10MHz

-50

20MHz

DISTORTION (dBc)

-60

-70

-5 0 5 10 15 OUTPUT POWER (dBm)

3.6 = -1

3.5

3.4

3.3

3.2

3.1

3.0

2.9

OUTPUT VOLTAGE (V)

2.8

2.7

2.6

-50 -25 0 25 50 75 100 125

OUT

(RL= 50Ω)

OUT

TEMPERATURE (

|-V

(RL= 100Ω)

|-V

OUT

| (RL= 100Ω)

| (RL= 50Ω)

OUT

AV = +2

= 2V

OUT

FIGURE 23. THIRD HARMONIC DISTORTION vs P

100

NI-

NOISE VOLTAGE (nV/√Hz)

0.1 1 10 100 FREQUENCY (kHz)

NI+

FIGURE 25. INPUT NOISE CHARACTERISTICS

OUT

100

Hz)

NOISE CURRENT (pA/√

FIGURE 24. OUTPUT VOLTAGE vs TEMPERATURE

6.1

6.0

5.9

5.8

5.7

POWER SUPPLY CURRENT (mA)

5.6

3.5 4 4.5 5 5.5 6 6.5 7 7.5

POWER SUPPLY VOLTAGE (±V)

FIGURE 26. SUPPLY CURRENT vs SUPPLY VOLTAGE

Page 11

Die Characteristics

DIE DIMENSIONS:

HFA1105

PASSIVATION:

59 mils x 59 mils x 19 mils 1500µm x 1500µm x 483µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8k

Å ±0.4kÅ

Type: Metal 2: AICu(2%) Thickness: Metal 2: 16k

Å ±0.8kÅ

Metallization Mask Layout

-IN

HFA1105

Type: Nitride Thickness: 4k

Å ±0.5kÅ

TRANSISTOR COUNT:

SUBSTRATE POTENTIAL (Powered Up):

Floating (Recommend Connection to V-)

V+

OUT

+IN

V-

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