• Extensive Characterization of Recovery Parameters
BASE (ISOLATED)
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Absolute Maximum Ratings (per Leg)
ParameterMax. Units
V
R
IF @ TC = 25°CContinuous Forward Current83
IF @ TC = 100°CContinuous Forward Current40
I
FSM
I
AS
E
AS
PD @ TC = 25°CMaximum Power Dissipation180
PD @ TC = 100°CMaximum Power Dissipation71
T
J
T
STG
Cathode-to-Anode Voltage600V
Single Pulse Forward Current 400
Maximum Single Pulse Avalanche Current 2.0
Non-Repetitive Avalanche Energy 220µJ
Operating Junction and
Storage Temperature Range
-55 to +150
VR = 600V
VF = 1.4V
Qrr * = 780nC
di
/dt * = 240A/µs
(rec)M
* 125°C
TO-244AB
(ISOLATED)
A
W
C
Thermal - Mechanical Characteristics
R
θJC
R
θCS
WtWeight––––79 (2.8)––––g (oz)
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max T
ParameterMin.Typ.Max.Units
Junction-to-Case, Single Leg Conducting––––––––0.70
Junction-to-Case, Both Legs Conducting––––––––0.35
Case-to-Sink, Flat , Greased Surface––––0.10––––
Junction Capacitance––– 140 250pFVR = 200V
Series Inductance–––7.0–––nH
From top of terminal hole to mounting
plane
ParameterMin. Typ. Max. Units Test Conditions
Reverse Recovery Time–––33–––IF = 1.0A, dif/dt = 200A/µs, VR = 30V
–––76115nsTJ = 25°C
––– 130 200TJ = 125°CIF = 50A
Peak Recovery Current–––8.015TJ = 25°C
–––1222TJ = 125°CVR = 200V
Reverse Recovery Charge––– 300 900TJ = 25°C
––– 780 2200TJ = 125°Cdif/dt = 200A/µs
/dt1Peak Rate of Fall of Recovery Current––– 340 –––TJ = 25°C
/dt2During t
b
––– 240 –––TJ = 125°C
A
nC
A/µs
7.49 (0.295)
6.99 (0.275)
(2 PLCS.)
23.55 (0.927)
20.42 (0.804)
DIA.
40.26 (1.585)
39.75 (1.565)
1
80.01 (3.150)
34.925 (1.375)
REF.
63.50 (2.500)
60.96 (2.400)
23
92.71 (3.650)
90.17 (3.550)
20.32 (0.800)
17.78 (0.700)
1/4-20 SLOTTED HEX
15.75 (0.620)
14.99 (0.590)
3.35 (0.132)
3.02 (0.119)
LEAD ASSIGNMENTS
1 - ANODE
2 - CATHODE
3 - ANODE
OUTLINE TO-244AB (IS OLATE D)
Dimensions in Millimeters and (In ches)
Page 3
1000
To Order
Next Data SheetIndex
Previous Datasheet
10000
R
1000
100
HFA100MD60C
T = 150°C
J
T = 125°C
J
F
100
T = 150°C
J
T = 125°C
J
T = 25°C
J
10
Instantaneous Forward Current - I (A)
1
0.01.02.03.0
Forward Voltage Drop - V (V)
FM
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
(per Leg)
1
10
1
T = 25°C
J
Reverse Current - I (µA)
0.1
0200400600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage, (per Leg)
A
10000
T
1000
100
10
Junction Capacitance - C (pF)
1101001000
Reverse Voltage - V (V)
T = 25°C
J
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
thJC
0.1
0.01
Thermal Impedance - Z (K/W)
0.001
0.000010.00010.0010.010.1110100
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S ingle Pulse
(Thermal Resistance)
t , Rectangular Pulse Duration (Seconds)
1
Fig. 4 - Maximum Thermal Impedance Z
P
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
Characteristics, (per Leg)
thjc
JDMthJC
t
1
t
2
21
C
Page 4
HFA100MD60C
To Order
Next Data SheetIndex
Previous Datasheet
200
V = 200V
R
T = 125°C
J
T = 25°C
J
160
120
I = 100A
rr
t - (ns)
F
I = 50A
F
I = 30A
F
80
40
1001000
di /dt - (A/µs)
f
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
(per Leg)
3000
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 100A
F
I = 50A
F
I = 30A
10
IRRM
I - (A)
1
1001000
di /dt - (A/µs)
f
F
Fig. 6 - Typical Recovery Current vs. dif/dt,
(per Leg)
10000
V = 200V
R
T = 125°C
J
T = 25°C
J
2000
I = 100A
F
I = 50A
RR
F
Q - (nC)
I = 30A
F
1000
0
1001000
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt,
(per Leg)
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 140A
1000
I = 30A
di(rec)M/dt - (A/µs)
100
1001000
I = 70A
F
Fig. 8 - Typical di
F
F
di /dt - (A/µs)
f
(rec)M
/dt vs. dif/dt,
(per Leg)
Page 5
REVERSE RECOVERY CIRCUIT
To Order
Next Data SheetIndex
Previous Datasheet
V = 200V
R
Ω
0.01
L = 70µH
D.U.T.
dif/dt
ADJUST
G
D
IRFP250
S
HFA100MD60C
I
F
0
1
1. dif/dt - Rate of change of current
through zero crossing
2. I
- Peak reverse recovery current
RRM
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
di /dt
f
RRM
t
a
3
t
rr
t
b
4
Q
2
I
RRMI
0.75
4. Qrr - Area under curve defined by t
and I
t
Qrr =
2
5. di
(rec)M
current during tb portion of t
rr
0.5
RRM
di(rec)M/dt
I
RRM
RRM
/dt - Peak rate of change of
X I
rr
RRM
5
rr
rr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
L = 100µH
HIGH-SPEED
DUT
Rg = 25 ohm
SWITCH
FREE-WHEEL
DIODE
CURRENT
MONITOR
Fig. 11 - Avalanche Test Circuit and Waveforms
Vd = 50V
Fig. 10 - Reverse Recovery Waveform and
Definitions
I
L(PK)
+
DECAY
TIME
V
(AVAL)
V
R(RATED)
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST
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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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Data and specifications subject to change without notice.
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