Datasheet HFA100MD60C Datasheet (International Rectifier)

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PD-2.442
L
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HFA100MD60C
TM
Features
• Reduced RFI and EMI
LUG TERMINAL ANODE 1
LUG TERMINAL CATHODE
Ultrafast, Soft Recovery DiodeHEXFRED
LU G TERMINA ANODE 2
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
BASE (ISOLATED)
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings (per Leg)
V
R
IF @ TC = 25°C Continuous Forward Current 83 IF @ TC = 100°C Continuous Forward Current 40 I
FSM
I
AS
E
AS
PD @ TC = 25°C Maximum Power Dissipation 180 PD @ TC = 100°C Maximum Power Dissipation 71 T
J
T
STG
Cathode-to-Anode Voltage 600 V
Single Pulse Forward Current 400 Maximum Single Pulse Avalanche Current 2.0 Non-Repetitive Avalanche Energy 220 µJ
Operating Junction and Storage Temperature Range
-55 to +150
VR = 600V
VF = 1.4V
Qrr * = 780nC
di
/dt * = 240A/µs
(rec)M
* 125°C
TO-244AB (ISOLATED)
A
W
C
Thermal - Mechanical Characteristics
R
θJC
R
θCS
Wt Weight –––– 79 (2.8) –––– g (oz)
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max T
Parameter Min. Typ. Max. Units Junction-to-Case, Single Leg Conducting –––– –––– 0.70 Junction-to-Case, Both Legs Conducting –––– –––– 0.35 Case-to-Sink, Flat , Greased Surface –––– 0.10 ––––
Mounting Torque 35 (4.0) –––– 50 (5.7) Terminal Torque 50 (5.7) –––– 75 (8.5)
See Fig. 12
J
°C/W K/W
lbf•in
(N•m)
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Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V
BR
V
FM
I
RM
C
T
L
S
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
di
(rec)M
Cathode Anode Breakdown Voltage 600 ––– ––– V IR = 100µA Max Forward Voltage 1.2 1.4 IF = 50A
––– 1.4 1.6 V IF = 100A
1.1 1.3 IF = 50A, TJ = 125°C
Max Reverse Leakage Current 4.0 20 µA VR = VR Rated
1.0 4.0 mA TJ = 125°C, VR = 480V
Junction Capacitance ––– 140 250 pF VR = 200V Series Inductance ––– 7.0 ––– nH
From top of terminal hole to mounting plane
Parameter Min. Typ. Max. Units Test Conditions Reverse Recovery Time ––– 33 ––– IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 76 115 ns TJ = 25°C ––– 130 200 TJ = 125°C IF = 50A
Peak Recovery Current ––– 8.0 15 TJ = 25°C
––– 12 22 TJ = 125°C VR = 200V
Reverse Recovery Charge ––– 300 900 TJ = 25°C
––– 780 2200 TJ = 125°C dif/dt = 200A/µs /dt1 Peak Rate of Fall of Recovery Current ––– 340 ––– TJ = 25°C /dt2 During t
b
––– 240 ––– TJ = 125°C
A
nC
A/µs
7.49 (0.295)
6.99 (0.275) (2 PLCS.)
23.55 (0.927)
20.42 (0.804)
DIA.
40.26 (1.585)
39.75 (1.565)
1
80.01 (3.150)
34.925 (1.375) REF.
63.50 (2.500)
60.96 (2.400)
2 3
92.71 (3.650)
90.17 (3.550)
20.32 (0.800)
17.78 (0.700)
1/4-20 SLOTTED HEX
15.75 (0.620)
14.99 (0.590)
3.35 (0.132)
3.02 (0.119)
LEAD ASSIGNMENTS 1 - ANODE 2 - CATHODE 3 - ANODE
OUTLINE TO-244AB (IS OLATE D)
Dimensions in Millimeters and (In ches)
Page 3
1000
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10000
R
1000
100
HFA100MD60C
T = 150°C
J
T = 125°C
J
F
100
T = 150°C
J
T = 125°C
J
T = 25°C
J
10
Instantaneous Forward Current - I (A)
1
0.0 1.0 2.0 3.0
Forward Voltage Drop - V (V)
FM
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
(per Leg)
1
10
1
T = 25°C
J
Reverse Current - I (µA)
0.1 0 200 400 600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage, (per Leg)
A
10000
T
1000
100
10
Junction Capacitance - C (pF)
1 10 100 1000
Reverse Voltage - V (V)
T = 25°C
J
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
thJC
0.1
0.01
Thermal Impedance - Z (K/W)
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
D = 0.50 D = 0.33 D = 0.25 D = 0.17
D = 0.08
S ingle Pulse (Thermal Resistance)
t , Rectangular Pulse Duration (Seconds)
1
Fig. 4 - Maximum Thermal Impedance Z
P
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
Characteristics, (per Leg)
thjc
J DM thJC
t
1
t
2
21
C
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HFA100MD60C
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200
V = 200V
R
T = 125°C
J
T = 25°C
J
160
120
I = 100A
rr
t - (ns)
F
I = 50A
F
I = 30A
F
80
40
100 1000
di /dt - (A/µs)
f
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
(per Leg)
3000
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 100A
F
I = 50A
F
I = 30A
10
IRRM
I - (A)
1
100 1000
di /dt - (A/µs)
f
F
Fig. 6 - Typical Recovery Current vs. dif/dt,
(per Leg)
10000
V = 200V
R
T = 125°C
J
T = 25°C
J
2000
I = 100A
F
I = 50A
RR
F
Q - (nC)
I = 30A
F
1000
0
100 1000
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt,
(per Leg)
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 140A
1000
I = 30A
di(rec)M/dt - (A/µs)
100
100 1000
I = 70A
F
Fig. 8 - Typical di
F
F
di /dt - (A/µs)
f
(rec)M
/dt vs. dif/dt,
(per Leg)
Page 5
REVERSE RECOVERY CIRCUIT
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V = 200V
R
0.01
L = 70µH
D.U.T.
dif/dt ADJUST
G
D
IRFP250
S
HFA100MD60C
I
F
0
1
1. dif/dt - Rate of change of current through zero crossing
2. I
- Peak reverse recovery current
RRM
3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 I extrapolated to zero current
and 0.50 I
RRM
di /dt
f
RRM
t
a
3
t
rr
t
b
4
Q
2
I
RRM I
0.75
4. Qrr - Area under curve defined by t and I
t Qrr = 2
5. di
(rec)M
current during tb portion of t
rr
0.5
RRM
di(rec)M/dt
I
RRM
RRM
/dt - Peak rate of change of
X I
rr
RRM
5
rr
rr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
L = 100µH
HIGH-SPEED
DUT
Rg = 25 ohm
SWITCH
FREE-WHEEL DIODE
CURRENT MONITOR
Fig. 11 - Avalanche Test Circuit and Waveforms
Vd = 50V
Fig. 10 - Reverse Recovery Waveform and
Definitions
I
L(PK)
+
DECAY TIME
V
(AVAL)
V
R(RATED)
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
Data and specifications subject to change without notice.
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