Datasheet HEF4070BD, HEF4070BTD, HEF4070BT, HEF4070BPN, HEF4070BP Datasheet (Philips)

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Page 1
DATA SH EET
Product specification File under Integrated Circuits, IC04
January 1995
INTEGRATED CIRCUITS
HEF4070B gates
For a complete data sheet, please also download:
•The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC
•The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC
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January 1995 2
Philips Semiconductors Product specification
Quadruple exclusive-OR gate
HEF4070B
gates
DESCRIPTION
The HEF4070B provides the positive quadruple exclusive-OR function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.
Fig.1 Functional diagram.
HEF4070BP(N): 14-lead DIL; plastic
(SOT27-1)
HEF4070BD(F): 14-lead DIL; ceramic (cerdip)
(SOT73)
HEF4070BT(D): 14-lead SO; plastic
(SOT108-1)
( ): Package Designator North America
Fig.2 Pinning diagram.
Fig.3 Logic diagram (one gate).
APPLICATION INFORMATION
Some examples of applications for the HEF4070B are:
• Logical comparators
• Parity checkers and generators
FAMILY DATA, I
DD
LIMITS category GATES
See Family Specifications
TRUTH TABLE
Note
1. H = HIGH state (the more positive voltage) L = LOW state (the less positive voltage)
I
1
I
2
O
1
LLL HLH LHH HHL
Page 3
January 1995 3
Philips Semiconductors Product specification
Quadruple exclusive-OR gate
HEF4070B
gates
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
=25°C; CL= 50 pF; input transition times ≤20 ns
V
DD
V
SYMBOL TYP. MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
In→ O
n
5 85 175 ns 58 ns + (0,55 ns/pF) C
L
HIGH to LOW 10 t
PHL
35 75 ns 24 ns + (0,23 ns/pF) C
L
15 30 55 ns 21 ns + (0,16 ns/pF) C
L
5 75 150 ns 48 ns + (0,55 ns/pF) C
L
LOW to HIGH 10 t
PLH
30 65 ns 19 ns + (0,23 ns/pF) C
L
15 25 50 ns 17 ns + (0,16 ns/pF) C
L
Output transition times 5 60 120 ns 10 ns + (1,0 ns/pF) C
L
HIGH to LOW 10 t
THL
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
5 60 120 ns 10 ns + (1,0 ns/pF) C
L
LOW to HIGH 10 t
TLH
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
V
DD
V
TYPICAL FORMULA FOR P (µW)
Dynamic power 5 1100 f
i
+∑(foCL) × V
DD
2
where
dissipation per 10 4900 f
i
+∑(foCL) × V
DD
2
fi= input freq. (MHz)
package (P) 15 14 400 f
i
+∑(foCL) × V
DD
2
fo= output freq. (MHz) C
L
= load capacitance (pF)
∑ (f
oCL
) = sum of outputs
V
DD
= supply voltage (V)
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