Datasheet HEF4060BDB, HEF4060BD, HEF4060BU, HEF4060BT, HEF4060BPB Datasheet (Philips)

DATA SH EET

Product specification
File under Integrated Circuits, IC04

January 1995

INTEGRATED CIRCUITS

HEF4060B
MSI

14-stage ripple-carry binary
counter/divider and oscillator

For a complete data sheet, please also download:

•The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC

•The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC

January 1995 2

Philips Semiconductors Product specification

14-stage ripple-carry binary
counter/divider and oscillator

HEF4060B

MSI

DESCRIPTION

The HEF4060B is a 14-stage ripple-carry binary
counter/divider and oscillator with three oscillator terminals
(RS, RTCand CTC), ten buffered outputs (O3to O9and
O11to O13) and an overriding asynchronous master reset
input (MR). The oscillator configuration allows design of
either RC or crystal oscillator circuits. The oscillator may

be replaced by an external clock signal at input RS. The
counter advances on the negative-going transition of RS.
A HIGH level on MR resets the counter (O

3

to O9and

O11to O13= LOW), independent of other input conditions.
Schmitt-trigger action in the clock input makes the circuit

highly tolerant to slower clock rise and fall times.

Fig.1 Functional diagram.

Fig.2 Pinning diagram.

PINNING

FAMILY DATA, I

DD

LIMITS category MSI

See Family Specifications

MR master reset
RS clock input/oscillator pin
R

TC

oscillator pin

C

TC

external capacitor connection

O

3

to O

9

counter outputs

O

11

to O

13

HEF4060BP(N): 16-lead DIL; plastic (SOT38-1)
HEF4060BD(F): 16-lead DIL; ceramic (cerdip) (SOT74)
HEF4060BT(D): 16-lead SO; plastic (SOT109-1)
( ): Package Designator North America

January 1995 3

Philips Semiconductors Product specification

14-stage ripple-carry binary counter/divider

and oscillator

HEF4060B

MSI

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Fig.3 Logic diagram.

January 1995 4

Philips Semiconductors Product specification

14-stage ripple-carry binary counter/divider
and oscillator

HEF4060B

MSI

AC CHARACTERISTICS

V

SS

= 0 V; T

amb

=25°C; CL= 50 pF; input transition times ≤ 20 ns

V

DD

V

SYMBOL MIN. TYP. MAX.

TYPICAL EXTRAPOLATION

FORMULA

Propagation delays

RS → O

3

5 210 420 ns 183 ns + (0,55 ns/pF) C

L

HIGH to LOW 10 t

PHL

80 160 ns 69 ns + (0,23 ns/pF) C

L

15 50 100 ns 42 ns + (0,16 ns/pF) C

L

5 210 420 ns 183 ns + (0,55 ns/pF) C

L

LOW to HIGH 10 t

PLH

80 160 ns 69 ns + (0,23 ns/pF) C

L

15 50 100 ns 42 ns + (0,16 ns/pF) C

L

On→ O

n + 1

52550ns

HIGH to LOW 10 t

PHL

10 20 ns

15 6 12 ns

52550ns

LOW to HIGH 10 t

PLH

10 20 ns

15 6 12 ns

MR → O

n

5 100 200 ns 73 ns + (0,55 ns/pF) C

L

HIGH to LOW 10 t

PHL

40 80 ns 29 ns + (0,23 ns/pF) C

L

15 30 60 ns 22 ns + (0,16 ns/pF) C

L

Output transition 5 60 120 ns 10 ns + (1,0 ns/pF) C

L

times 10 t

THL

30 60 ns 9 ns + (0,42 ns/pF) C

L

HIGH to LOW 15 20 40 ns 6 ns + (0,28 ns/pF) C

L

5 60 120 ns 10 ns + (1,0 ns/pF) C

L

LOW to HIGH 10 t

TLH

30 60 ns 9 ns + (0,42 ns/pF) C

L

15 20 40 ns 6 ns + (0,28 ns/pF) C

L

Minimum clock pulse 5 120 60 ns

width input RS 10 t

WRSH

50 25 ns

HIGH 15 30 15 ns

Minimum MR pulse 5 50 25 ns

width; HIGH 10 t

WMRH

30 15 ns

15 20 10 ns

Recovery time 5 160 80 ns

for MR 10 t

RMR

80 40 ns

15 60 30 ns

Maximum clock pulse 5 4 8 MHz

frequency input RS 10 f

max

10 20 MHz

15 15 30 MHz

January 1995 5

Philips Semiconductors Product specification

14-stage ripple-carry binary counter/divider
and oscillator

HEF4060B

MSI

AC CHARACTERISTICS

V

SS

= 0 V; T

amb

=25°C; input transition times ≤ 20 ns

Notes

1. where:
f

i

= input frequency (MHz)
fo= output frequency (MHz)
CL= load capacitance (pF)
VDD= supply voltage (V)
Ct= timing capacitance (pF)
f

osc

= oscillator frequency (MHz)

RC oscillator

V

DD

V

TYPICAL FORMULA FOR P (µW)

(1)

Dynamic power dissipation 5 700 fi+ foCLV

DD

2

per package 10 3 300 fi+ foCLV

DD

2

(P) 15 8 900 fi+ foCLV

DD

2

Total power dissipation 5 700 f

osc

+ foCLV

DD

2

+ 2CtV

DD

2

f

osc

+ 690 V

DD

when using the 10 3 300 f

osc

+ foCLV

DD

2

+ 2CtV

DD

2

f

osc

+ 6 900 V

DD

on-chip oscillator (P) 15 8 900 f

osc

+ foCLV

DD

2

+ 2CtV

DD

2

f

osc

+ 22 000 V

DD

Fig.4 External component connection for RC oscillator.

Typical formula for oscillator frequency:

f

osc

1

2,3 RtCt××

-------------------------------- -=

January 1995 6

Philips Semiconductors Product specification

14-stage ripple-carry binary counter/divider
and oscillator

HEF4060B

MSI

Timing component limitations

The oscillator frequency is mainly determined by
RtCt, provided Rt<< R2 and R2C2 << RtCt. The function
of R2 is to minimize the influence of the forward voltage
across the input protection diodes on the frequency. The
stray capacitance C2 should be kept as small as possible.
In consideration of accuracy, Ctmust be larger than the
inherent stray capacitance. Rtmust be larger than the
LOCMOS ‘ON’ resistance in series with it, which typically
is 500 Ω at VDD= 5 V, 300 Ω at VDD= 10 V and 200 Ω at
V

DD

= 15 V.

The recommended values for these components to
maintain agreement with the typical oscillation formula are:

Ct≥ 100 pF, up to any practical value,
10 kΩ≤Rt≤1 MΩ.

Typical crystal oscillator circuit

In Fig.5, R2 is the power limiting resistor. For starting and
maintaining oscillation a minimum transconductance is
necessary.

Fig.5 External component connection for crystal

oscillator.

Fig.6 Test set-up for measuring forward transconductance gfs=dio/dviat vois constant (see also graph Fig.7);

MR = LOW.

January 1995 7

Philips Semiconductors Product specification

14-stage ripple-carry binary counter/divider
and oscillator

HEF4060B

MSI

Fig.7 Typical forward transconductance gfsas a

function of the supply voltage at T

amb

= 25 °C.

A: average
B: average + 2 s,
C: average − 2 s, where ‘s’ is the observed standard deviation.

Fig.8 RC oscillator frequency as a function of

Rtand Ctat VDD= 5 to 15 V; T

amb

=25°C.

Ctcurve at Rt= 100 kΩ; R2 = 470 kΩ.
Rtcurve at Ct= 1 nF; R2 = 5 Rt.

Fig.9 Oscillator frequency deviation (∆f

osc

) as a function of ambient temperature; referenced at: f

osc

at

T

amb

=25°C and VDD= 10 V.

___ Rt= 100 kΩ; Ct= 1 nF; R2 = 0.

--- Rt= 100 kΩ;Ct= 1 nF; R2 = 300 kΩ.