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HI-SINCERITY
MICROELECTRONICS CORP.
HE9013
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9013 is designed for use in 1W output amplifier of portable radios in
class B push-pull operation.
Spec. No. : HE6104
Issued Date : 1992.09.09
Revised Date : 2002.03.06
Page No. : 1/4
Features
• High Total Power Dissipation (PT: 625mW)
• High Collector Current (IC: 500mA)
• Complementary to HE9012
• Excellent lnearity
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................................... 40V
VCEO Collector to Emitter Voltage .................................................................................................. 20V
VEBO Emitter to Base Voltage........................................................................................................... 5V
IC Collector Current.................................................................................................................... 500 mA
Icp Base Current......................................................................................................................... 100 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCEO 20 - - V IC=1mA, IB=0
BVEBO 5 - - V I E= 100uA, IC=0
ICBO - - 100 nA VCE=25V, IE=0
IEBO - - 100 nA VEB=3V , IC=0
*VCE(sat) - - 0.6 V IC=500mA, IB=5 0mA
*VBE(sat) - - 1.2 V IC=500mA, IB=50mA
VBE(on) - - 0.9 V VCE=1V, IC=10mA
*hFE1 112 180 300 VCE=1V, IC=50mA
*hFE2 40 - - VCE=1V, IC=500mA
Cob - - 8 pF VCB=10V, f=1MHz
fT 100 - - MHz VCE=1V, IC=10mA, f=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification on hFE1
Rank G H I1 I2
Range 112-166 144-202 176-246 214-300
HE9013 HSMC Product Specification
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HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6104
Issued Date : 1992.09.09
Revised Date : 2002.03.06
Page No. : 2/4
1000
100
hFE
10
0.1 1 10 100 1000
1000
Cur rent G ain & C o llector Current
125oC
25oC
75oC
hFE @ VCE=1V
Collector Current- IC (mA)
Sat uration Voltage & Collect or Cur rent
25oC
75oC
1000
CE(sat)
V
100
Satur ation Voltage ( m V)
10
0.1 1 10 100 1000
125oC
25oC
B
@ IC=10I
75oC
Collect o r Current- IC (mA)
ON Voltage & Collector Current
1000
25oC
Sat urati on Voltage & Col lector Current
125oC
BE(sat)
V
@ IC=10I
Saturat ion Volta ge ( m V)
100
0.1 1 10 100 1000
Collector Current- IC (mA)
Capacitance & Rev erse-Biased Voltage
100
10
Capacitance ( pF)
Cob
75oC
B
ON Voltage ( m V)
100
0.1 1 10 100 1000
125oC
Collector Current- IC (mA)
BE(ON)
V
@ VCE=1V
Cutoff Frequency & Coll ect or Current
1000
VCE=1
100
Cutoff Frequency (MHz)...
1
0.1 1 10 100
Reverse-Biased Vol t a ge ( V)
10
1 10 100 1000
Collect o r Current ( mA)
HE9013 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6104
Issued Date : 1992.09.09
Revised Date : 2002.03.06
Page No. : 3/4
10000
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10
1
1 10 100
Forwar d Vol t a ge- VCE (V)
(mA)
C
Collect or Current-I
1000
100
700
PD-Ta
600
500
400
300
200
Power Dis s ip ation- PD (mW)
100
0
0 50 100 150 200
Ambient Temperature- Ta (oC)
HE9013 HSMC Product Specification
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HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6104
Issued Date : 1992.09.09
Revised Date : 2002.03.06
Page No. : 4/4
A
α2
B
31
2
Marking:
HE
091
3
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
DIM
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
α1
α2
α3
*: Typical
Min. Max. Min. Max.
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HE9013 HSMC Product Specification
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