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HI-SINCERITY
MICROELECTRONICS CORP.
HE9012
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE9012 is designed for use in 1W output amplifier of portable radios in
class B push-pull operation.
Spec. No. : HE6103
Issued Date : 1992.09.09
Revised Date : 2002.02.18
Page No. : 1/4
Features
• High total power dissipation (PT: 625mW)
• High collector current (IC: 500mA)
• Complementary to HE9013
• Excellent linearity
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................ -20 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current.................................................................................................................. -500 mA
IBP Base Current...................................................................................................................... -100 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA, IE=0
BVCEO -20 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-100uA, IC=0
ICBO - - -100 nA VCE=-25V, IE=0
IEBO - - -100 nA VEB=-3V, IC=0
*VCE(sat) - - -0.6 V IC=-500mA, IB=-50mA
*VBE(sat) - - -1. 2 V IC=-500mA, I B=-50mA
VBE(on) - - -0.9 V VCE=-1V, IC=-10mA
*hFE1 112 180 300 VCE=-1V, IC=-50mA
*hFE2 40 - - VCE=-1V, IC=-500mA
Cob - - 8 pF VCB=-10V, f=1MHz
fT 100 - - MHz VCE=-1V, IC=-10mA, f=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification on hFE1
Rank G H I1 I2
Range 112-166 144-202 176-246 214-300
HE9012 HSMC Product Specification
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HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6103
Issued Date : 1992.09.09
Revised Date : 2002.02.18
Page No. : 2/4
1000
125oC
100
hFE
10
25oC
75oC
hFE @ VCE=1V
1 10 100 1000
Collector Current-IC (mA)
Sat urati on Voltage & C ol lector C urrent
1000
25oC
Cur ren t Ga in & C ollector Cu rrent
1000
Sat urati on Voltage & C ollector Cu rrent
CE(sat)
V
100
Satur ation Voltag e (mV)
10
0.1 1 10 100 1000
1000
B
@ IC=10I
75oC
125oC
Collector Current-IC (mA)
25oC
ON Voltage & Collector Current
25oC
75oC
125oC
Saturation Voltage (mV)
100
0.1 1 10 100 1000
Collec tor Current-IC (mA)
BE(sat)
V
@ IC=10I
Capa citance & Rev er se- B i ased Voltage
100
10
Capacitance (pF)
Cob
75oC
125oC
ON Voltage (mV)
BE(ON)
V
B
100
0.1 1 10 100 1000
Collec tor Current-IC (mA)
@ VCE=1V
Cut off Frequ ency & Collector Cu rrent
1000
VCE=1
100
Cutoff Fr eque ncy ( M Hz)...
1
0.1 1 10 100
Reverse- Biased Voltage ( V)
10
1 10 100 1000
Collec tor Current (mA )
HE9012 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6103
Issued Date : 1992.09.09
Revised Date : 2002.02.18
Page No. : 3/4
10000
1000
(mA)
C
100
Collect or Curre n t-I
PT=1ms
PT=100ms
PT=1s
10
1
1 10 100
Forwar d Voltage- VCE (V)
Safe Operati ng Area
700
PD-Ta
600
500
400
300
200
Power Dissipation-PD (mW)
100
0
0 50 100 150 200
Ambient Tem p eratu r e- Ta (oC)
HE9012 HSMC Product Specification
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HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6103
Issued Date : 1992.09.09
Revised Date : 2002.02.18
Page No. : 4/4
A
α2
B
31
2
Marking:
HE
091
2
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
DIM
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
α1
α2
α3
*: Typical
Min. Max. Min. Max.
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HE9012 HSMC Product Specification
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