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UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
2W audio amplifier for portable radio and general purpose
applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8050
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -6 V
Collector Dissipation(Ta=25¡æ) Pc 1 W
Collector Current Ic -1.5 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -65 ~ +150 °C
1
TO-92L
1:EMITTER 2:COLLECTOR 3:BASE
ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=-100µA,IE=0 -40 V
Collector-Emitter Breakdown Voltage BVCEO Ic=-2mA,IB=0 -25 V
Emitter-Base Breakdown Voltage BVEBO IE=-100µA,Ic=0 -6 V
Collector Cut-Off Current ICBO VCB=-35V,IE=0 -100 nA
Emitter Cut-Off Current IEBO VEB=-6V,Ic=0 -100 nA
DC Current Gain(note) hFE1
hFE2
hFE3
Collector-Emitter Saturation Voltage VCE(sat) Ic=-800mA,IB=-80mA -0.28 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=-800mA,IB=-80mA -0.98 -1.2 V
Base-Emitter Voltage VBE VCE=-1V,Ic=-10mA -0.66 -1.0 V
Current Gain Bandwidth Product fT VCE=-10V,Ic=-50mA 100 190 MHz
Output Capacitance Cob VCB=-10V,IE=0
VCE=-1V,Ic=-5mA
VCE=-1V,Ic=-100mA
VCE=-1V,Ic=-800mA
f=1MHz
45
170
85
16080500
40
9.0 pF
UTC UNISONIC TECHNOLOGIES CO. LTD
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UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
CLASSIFICATION OF hFE
RANK C D E
RANGE 120-200 160-300 250-500
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
-0.5
-0.4
-0.3
-0.2
-0.1
Ic,Collector current (mA)
0
-0 -0.4 -0.8 -1.2 -1.6 -2.0
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
4
-10
3
-10
2
-10
Saturation voltage (mV)
1
-10
B
Ic=10*I
VBE(sat)
VCE(sat)
0
-1
-10
-10
Ic,Collector current (mA)
1
-10
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
2
-10
Current Gain-bandwidth
3
-10
Fig.2 DC current Gain
3
10
2
10
1
10
HFE, DC current Gain
0
10
10
10
10
product,fT(MHz)
10
0
-1
-10
-10
-10
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
3
2
1
0
0
-10
product
1
-10
Ic,Collector current (mA)
VCE=-1V
1
VCE=-10V
2
-10
Fig.3 Base-Emitter on Voltage
3
-10
VCE=-1V
2
-10
1
-10
Ic,Collector current (mA)
0
-10
3
2
-10
-10
3
-10
0 -0.2 -0.4 -0.6 -0.8 -1.0
Base-Emitter voltage (V)
Fig.6 Collector output
3
10
2
10
1
10
Cob,Capacitance (pF)
0
10
-10
Capacitance
f=1MHz
IE=0
0
1
-10
Collector-Base voltage (V)
2
-10
3
-10
UTC UNISONIC TECHNOLOGIES CO. LTD
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