Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6110
Issued Date : 1992.09.30
Revised Date : 2001.07.18
Page No. : 1/4
HE8050S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8050S is designed for gen er al purp ose amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage ........................................................................................ 25 V
VCEO Collector to Emitter Voltage ..................................................................................... 20 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current....................................................................................................... 700 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 25 - - V IC=10uA, IE=0
BVCEO 20 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 1 uA VCB=20V, IE=0
IEBO - - 100 nA VEB=5V, IC=0
*VCE(sat) - - 0.5 V IC=0.5A, IB=50mA
VBE(on) - - 1 V VCE=1V, IC=150mA
*hFE1 100 - 500 VCE=1V, IC=150mA
*hFE2 - 140 - VCE=1V, IC=500mA
fT 150 - - MHz VCE=10V, IC=20mA, f=100MHz
Cob - - 10 pF VCB=10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classifications of hFE
Rank C C1 D D1 E
hFE1 100-180 100-180 160-300 160-300 250-500
hFE2 -
50
>
-
50
>
-
HE8050S HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6110
Issued Date : 1992.09.30
Revised Date : 2001.07.18
Page No. : 2/4
1000
100
hFE
10
0.1 1 10 100 1000
10000
Current Gain & Collector Current
VCE=1V
Collector Curren t (m A )
On Vol t age & Collector Current
1000
100
Satu r ation Volt age (mV)
10
1000
Saturation Voltage & Collector Current
CE(sat)
V
@ IC=10I
0.1 1 10 100 1000
Collector Curren t (m A )
Cutoff Frequency & Collector Current
VCE=10V
B
1000
BE(on)
V
On Voltage (mV)
100
0.1 1 10 100 1000
Collector Curren t (m A )
@ VCE=1V
Capa citance & Reverse- Bi ased Volta ge
100
10
Capac itanc e (pF)
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collector Curren t (m A )
Safe Operating Area
10000
PT=1ms
PT=100ms
PT=1s
(mA)
C
Collector Curren t-I
1000
100
10
1
0.1 1 10 100
Reverse Biased Volt age ( V)
1
1 10 100
Forwar d Vol tage-VCE (V)
HE8050S HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6110
Issued Date : 1992.09.30
Revised Date : 2001.07.18
Page No. : 3/4
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
0
0 20 40 60 80 100 120 140 160
Ambient Temper ature- Ta(oC)
PD-Ta
HE8050S HSMC Product Specification
Page 4
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6110
Issued Date : 1992.09.30
Revised Date : 2001.07.18
Page No. : 4/4
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Collector 3.Bas e
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H C 0.5000 - 12.70 - I D 0.0142 0.0220 0.36 0.56
E-*0.0500 -
1.27
*
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your l ocal HSMC sales office.
1
α
2
α
3
α
-
-
-
0.1000 -
*
0.0500 -
*
5
°
*
2
°
*
2
°
*
-
-
-
*:Typical
2.54
*
1.27
*
5
°
*
2
°
*
2
°
*
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HE8050S HSMC Product Specification
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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