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UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC HE8050 is a low voltage high current small
signal NPN transistor, designed for Class B push-pull 2W
audio amplifier for portable radio and general purpose
applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8550
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
Collector Dissipation(Ta=25°C) Pc 1 W
Collector Current Ic 1.5 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -65 ~ +150 °C
1
TO-92L
1:EMITTER 2:COLLECTOR 3: BASE
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=100µA,IE=0 40 V
Collector-Emitter Breakdown Voltage BVCEO Ic=2mA,IB=0 25 V
Emitter-Base Breakdown Voltage BVEBO IE=100µA,Ic=0 6 V
Collector Cut-Off Current ICBO VCB=35V,IE=0 100 nA
Emitter Cut-Off Current IEBO VEB=6V,Ic=0 100 nA
DC Current Gain hFE1
hFE2
hFE3
Collector-Emitter Saturation Voltage VCE(sat) Ic=800mA,IB=80mA 0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=800mA,IB=80mA 1.2 V
Base-Emitter Saturation Voltage VBE VCE=1V,Ic=10mA 1.0 V
Current Gain Bandwidth Product fT VCE=10V,Ic=50mA 100 MHz
Output Capacitance Cob VCB=10V,IE=0
VCE=1V,Ic=5mA
VCE=1V,Ic=100mA
VCE=1V,Ic=800mA
f=1MHz
45
135
85
160
40
110
9.0 pF
500
UTC UNISONIC TECHNOLOGIES CO., LTD.
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UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK C D E
RANGE 120-200 160-300 250-500
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
0.5
0.4
0.3
0.2
0.1
Ic,Collector current (mA)
0
0 0.4 0.8 1.2 1.6 2.0
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
4
10
3
10
2
10
Saturation voltage (mV)
1
10
B
Ic=10*I
VBE(sat)
VCE(sat)
0
-1
10
10
Ic,Collector current (mA)
1
10
IB=3.0mA
IB=2.5mA
IB=2.0mA
IB=1.5mA
IB=1.0mA
IB=0.5mA
2
10
10
10
10
HFE, DC current Gain
10
10
10
10
product,fT(MHz)
Current Gain-bandwidth
10
3
10
Fig.2 DC current Gain
3
VCE=1V
2
1
0
-1
10
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
3
2
1
0
0
10
Ic,Collector current (mA)
1
0
10
10
product
VCE=10V
1
10
2
10
Fig.3 Base-Emitter on Voltage
3
10
VCE=1V
2
10
1
10
Ic,Collector current (mA)
0
10
3
2
10
10
3
10
0.2 0.4 0.6 0.8 1.0 1.2
Base-Emitter voltage (V)
Fig.6 Collector output
3
10
2
10
1
10
Cob,Capacitance (pF)
0
10
Capacitance
f=1MHz
IE=0
0
10
1
10
2
10
Collector-Base voltage (V)
3
10
UTC UNISONIC TECHNOLOGIES CO., LTD.
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