The HD74LV221A features output pulse-duration control by three methods. In the first method, the A
input is low and the B input goes high. In the second method, the B input is high and the A input goes low.
In the third method, the A input is low, the B input is high, and the clear (CLR) input goes high.
The basic pulse duration is programmed by selecting external resistance and capacitance values. The
external timing capacitor must be connected between Cext and Rext/Cext (positive) and an external resistor
connected between Rext/Cext and VCC.
To obtain variable pulse durations, connect an external variable resistance between Rext/Cext and VCC.
Pulse duration can be reduced by taking CLR low.
Features
• VCC = 2.0 V to 5.5 V operation
• All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V)
• All outputs VO (Max.) = 5.5 V (@VCC = 0 V)
• Output current ±6 mA (@VCC = 3.0 V to 3.6 V), ±12 mA (@VCC = 4.5 V to 5.5 V)
Page 2
HD74LV221A
Function Table
InputsOutputs
CLRABQ Q
L XXL H
XHXLH
XXLLH
HL↑
H↓H
↑LH
Note: H:High level
L:Low level
X:Immaterial
↑:Low to high transition
↓:High to low transition
: High level pulse
: Low level pulse
Pin Arrangement
1A
1B
1CLR
1Q
2Q
2Cext
2Rext / Cext
GND
1
2
3
4
5
6
7
89
(Top view)
16
V
CC
15
1Rext / Cext
14
1Cext
13
1Q
12
2Q
11
2CLR
2B
10
2A
2
Page 3
HD74LV221A
Absolute Maximum Ratings
ItemSymbolRatingsUnitConditions
Supply voltage rangeV
Input voltage range*
Output voltage range*
1
1, 2
Input clamp currentI
Output clamp currentI
Continuous output currentI
Continuous current through
V
or GND
CC
Maximum power dissipation
at Ta = 25°C (in still air)*
3
CC
V
I
V
O
IK
OK
O
or I
I
CC
GND
P
T
Storage temperatureTstg–65 to 150°C
Notes: The absolute maximum ratings are values which must not individually be exceeded, and furthermore,
no two of which may be realized at the same time.
1. The input and output voltage ratings may be exceeded if the input and output clamp-current
ratings are observed.
2. This value is limited to 5.5 V maximum.
3. The maximum package power dissipation was calculated using a junction temperature of 150°C.
–0.5 to 7.0V
–0.5 to 7.0V
–0.5 to VCC + 0.5VOutput: H or L
–0.5 to 7.0VCC: OFF
–20mAVI < 0
±50mAVO < 0 or VO> V
±25mAVO = 0 to V
CC
±50mA
785mWSOP
500TSSOP
CC
3
Page 4
HD74LV221A
Recommended Operating Conditions
ItemSymbolMinTypMaxUnitConditions
Supply voltage rangeV
Input voltage rangeV
Output voltage rangeV
Output currentI
CC
I
O
OH
I
OL
Input transition rise or fall rate∆t /∆v0—200ns/VVCC = 2.3 to 2.7 V
Cext = 28 pF or 100 pF or 0.01 µF or 0.1 µF
Rext = 1 kΩ or 2 kΩ or 10 kΩ
V
CC
Q
C = 15 pF or 50 pF
L
Q
C = 15 pF or 50 pF
L
Output
Output
9
Page 10
HD74LV221A
Timing diagram
A
B
CLR
Rext/
Cext
Q
Q
t
w
Caution in use
In order to prevent any malfunctions due to noise, connect a high frequency performance capacitor
between Vcc and GND, and keep the wiring between the external components and Cext, Rext/Cext
pins as short as possible.
Large values of Cext may cause problems when powering down the HD74LV221A because of the amount
of energy stored in the capacitoe. When a system containing diodes at pin 7 or pin15.
Current through the input protection diodes must be limited to 10 mA; therefore, the turn-off time of the Vcc
power supply must not be faster than t = Vcc • Cext/(20 mA). for example, if Vcc 5 V and Cext = 22 µF,
the Vcc supply must turn off no faster than t = (5 V) • (22 µF)/20mA = 5.5 ms. This is usually not a problem
because power supplies are heavily filtered and cannot discharge at this rate.
When a more rapid decrease of Vcc to zero volts occurs, the HD74LV221A may sustain damage. To avoid
this possibility, use an external calmping diode.
t
w
t
w
10
Page 11
HD74LV221A
• Waveform
Input A
Input B
Input CLR
Output Q
– 1
90%
10%
10%
50%
t
f
10%
t
r
90%
50%
t
r
90%
90%
50%50%
t (trigger)
PLH
50% V
t (trigger)
PHL
t
f
t
r
50%
10%10%
t (L)
w
t
PHL
CC
t
50% V
PLH
90%
CC
V
CC
GND
V
CC
GND
V
CC
GND
V
OH
V
OL
Output Q
50% V
CC
50% V
CC
V
OH
V
OL
11
Page 12
HD74LV221A
• Waveform – 2
Input A
Input B
Output Q
Output Q
Note:
t
f
t
r
50%
10%10%
t (L)
w
t
r
90%
50%
t
f
10%
t
r
90%
50%
90%
t (H)
w
t
f
90%90%90%
50%50%50%
10%10%10%
t (L)
w
50% V
50% V
1. Input waveform: PRR ≤ 1 MHz, Zo = 50 Ω, t ≤ 3 ns, t ≤ 3 ns
t (H)
w
CC
CC
rf
50% V
t (out)
w
50% V
CC
CC
2. The output are measured one at a time with one transition per measurement.
V
CC
GND
V
CC
GND
V
OH
V
OL
V
OH
V
OL
12
Page 13
Application Data
10000.0
1000.0
WQ
100.0
10.0
Output pulse width t (µs)
1.0
0.1
10
HD74LV221A
Vcc = 2.5 V
Rext
1 kΩ
10 kΩ
100 kΩ
1 MΩ
2
10
3
10
4
10
5
10
6
10
7
Timing capacitance Cext (pF)
13
Page 14
HD74LV221A
10000.0
1000.0
WQ
100.0
10.0
Output pulse width t (µs)
1.0
0.1
10
Vcc = 3.3 V
Rext
1 kΩ
10 kΩ
100 kΩ
1 MΩ
2
10
3
10
4
10
5
10
6
10
7
WQ
Output pulse width t (µs)
10000.0
1000.0
100.0
10.0
1.0
0.1
10
Timing capacitance Cext (pF)
Vcc = 5.0 V
Rext
1 kΩ
10 kΩ
100 kΩ
1 MΩ
2
10
3
10
4
10
5
10
6
10
7
14
Timing capacitance Cext (pF)
Page 15
1.4
1.3
1.2
1.1
1.0
HD74LV221A
Rext = 2 kΩ
Cext
1000 pF
10000 pF
100000 pF
1000000 pF
Coefficient of output pulse width K
0.9
0.8
2.02.53.03.54.04.55.06.05.5
1.4
1.3
1.2
1.1
1.0
Supply voltage V (V)
CC
Rext = 10 kΩ
Cext
1000 pF
10000 pF
100000 pF
1000000 pF
Coefficient of output pulse width K
0.9
0.8
2.02.53.03.54.04.55.06.05.5
Supply voltage V (V)
CC
15
Page 16
HD74LV221A
Package Dimensions
16
10.06
10.5 Max
9
5.5
1
0.80 Max
1.27
0.42 ± 0.08
± 0.06
0.40
Dimension including the plating thickness
Base material dimension
8
0.12
2.20 Max
0.10 ± 0.10
0.15
M
7.80
0.22 ± 0.05
0.20 ± 0.04
0.70 ± 0.20
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
+ 0.20
– 0.30
1.15
0
° – 8°
FP-16DA
—
Conforms
0.24 g
16
Page 17
16
HD74LV221A
Unit: mm
9.9
10.3 Max
9
1
1.27
0.635 Max
*0.42 ± 0.08
0.40 ± 0.06
*Dimension including the plating thickness
Base material dimension
8
0.25
+ 0.11
– 0.04
0.14
0.15
3.95
1.75 Max
M
6.10
1.08
0.20 ± 0.03
*0.22 ± 0.03
0.60
Hitachi Code
JEDEC
EIAJ
Weight
+ 0.10
– 0.30
0° – 8°
+ 0.67
– 0.20
(reference value)
FP-16DN
Conforms
Conforms
0.15 g
17
Page 18
HD74LV221A
0.22
0.20 ± 0.06
5.0
5.3 Max
169
4.40
18
0.65
+ 0.08
– 0.07
0.13
0.65 Max
1.0
M
6.40 ± 0.20
0.10
1.10 Max
Dimension including the plating thickness
Base material dimension
0.17 ± 0.05
0.15 ± 0.04
+0.03
–0.04
0.07
0° – 8°
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
0.50 ± 0.10
TTP-16DA
—
—
0.05 g
18
Page 19
HD74LV221A
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as in aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safe
devices, so that the equipment incorporating the Hitachi product does not cause bodily injury, fire or
other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URLNorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore): http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan): http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong): http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
19
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