Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 1/3
HD44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HD44H11 is designed for various specific and general purpose
applications, such as:ou tput and dr iv er st ages o f ampli fiers oper ating
at frequencies from DC to greater than 1MHz; series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.....................................................................................+150 °C Maximum
TO-220
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 50 W
Total Power Dissipation (Ta=25°C).................................................................................. 1.67 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 80 V
BVCEO Collector to Emitter Voltage.................................................................................... 80 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................. 10 A
IB Base Current..................................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=100mA, IB=0
BVCEO 80 - - V IC=100mA, IB=0
BVCES 80 - - V IC=1mA, IC=0
BVEBO 5 - - V IE=1mA
ICES - - 10 uA VCE=80V
IEBO - - 100 uA VEB=5V
*VCE(sat) - - 1 V IC=8A, IB=0.4A
*VBE(sat) - - 1.5 V IC=8A, IB=0.8A
*hFE1 60 - - IC=2A, VCE=1V
*hFE2 40 - - IC=4A, VCE=1V
Cob - 130 - pF VCB=10V
fT - 50 - MHz VCE=1V, IC=500mA, f=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HD44H11 HSMC Product Specification
Page 2
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 2/3
1000
125oC
100
hFE
10
1 10 100 1000 10000
25oC
hFE @ VCE=1V
Collect o r Current IC (mA)
75oC
Sat urati on Voltage & Col lector Current
10000
Current Gai n & Collector Current
1000
100
Satur ation Voltage ( m V)
10
1 10 100 1000 10000
75oC
125oC
25oC
Collect o r Current IC (mA)
VC
E(sat)
@ IC=20I
Capacita nce & Reverse- B i ased Volta ge
1000
Sat ura tion Voltage & C ollector C urrent
B
1000
Saturat ion Voltag e ( m V)
100
25oC
125oC
1 10 100 1000 10000
75oC
BE(sat)
V
Collect o r Current IC (mA)
Safe Operating Area
100
10
1
PT=1 ms
Collector Current (A
0.1
PT=100 ms
PT=1s
@ IC=10I
100
Capacitance (Pf )
Cob
B
10
1 10 100
Reverse Biased Volt a ge ( V)
0.01
1 10 100 1000
Forwar d Vol t a ge ( V)
HD44H11 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A
D
B
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 3/3
Marking:
E
C
H
D44H11
Date Code
Control Code
H
Style: Pin 1.Base 2.Collector 3.Emitter
G
I
3
M
2
K
N
1
4
OP
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HD44H11 HSMC Product Specification
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