Page 1
for High Definition and New Super-Slim CRT Display
Features
■ STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR “ENHANCED
GENERATION“ EHVS1
■ WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
■ LESS SENSI T I VE TO O P ERATIN G
TEMPERATURE VARIATION
HD1530JL
High Voltage NPN Power Transistor
PRELIMINARY DATA
Figure 1. Package
Applications
■ HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV, AND HIGH -END
MONITORS
Description
The device uses a Diffused Collector in Planar
technology which adopts ”Enhanced High Voltage
Structure” (EHVS1) that was developed to fit
High-Definition CRT displays.
The new HD product series features improved
silicon efficiency , bringing updated performance to
Horizontal Deflection output stages.
Table 1. Order Codes
Part Number Marking Package Packing
3
2
1
TO-264
Figure 2. Internal S chematic Diagram
HD1530JL HD1530JL TO-264 TUBE
rev.1
July 2005 1/5
www.st.com
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HD1530JL
Table 2. Absolute Maximum Rating
Symbol Parameter Value Unit
V
V
V
P
T
CES
CEO
EBO
I
I
CM
I
I
BM
TOT
STG
T
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitte-Base Voltage (IC = 0)
Collector Current 26 A
C
Collector Peak Current (tP < 5ms)
Base Current 10 A
B
Base Peak Current (tP < 5ms)
Total dissipation at Tc = 25°C
1500 V
700 V
10 V
40 A
20 A
200 W
Storage Temperature -65 to 150 °C
Max. Operating Junction Temperature 150 °C
J
Table 3. Thermal Data
Symbol Parameter Value Unit
R
thJC
Thermal Resistance Junction-Case____________________Max 0.625 °C/W
Table 4.
Electrical Characteristics (T
= 25°C; unles s otherwise s pecified)
CASE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(SUS)
Note: 1
V
EBO
V
CE(sat)
= 1500V
Collector Cut-off Current
= 0)
(V
BE
Emitter Cut-off Current
= 0)
(I
C
Collector-Emitter
Susting Voltage (I
= 0)
B
V
CE
= 1500V____TC = 125°C
V
CE
V
= 5V 10 μA
EB
I
= 10mA 700 V
C
Emitter-Base Voltage (IC = 0) IE = 10mA 10 V
Colle ctor-Em itter Sa turat ion V olta ge I
= 13A _____ IB = 3.25A 2.5 V
C
0.2
2
Note: 1
V
BE(sat)
Base-Emitter Saturation Volt age
I
= 13A _____ IB = 3.25A 1 1.5 V
C
Note: 1
h
DC Current Gain IC = 1A _____ V
FE
INDUCTIVE LOAD
t
Storage Time
s
t
Fall Time
f
INDUCTIVE LOAD
t
Storage Time
s
t
Fall Time
f
INDUCTIVE LOAD
t
Storage Time
s
t
Fall Time
f
= 5V
CE
I
= 13A ____ V
C
= 12A ____ _ fh = 32KHz
I
C
= 1.5A ___ I
I
B(on)
= 12A _____ fh = 48KHz
I
C
I
= 2A ____ I
B(on)
= 6.5A _____ fh = 100KHz
I
C
I
= 0.9A ___ I
B(on)
CE
B(off)
B(off)
B(off)
= 5V
5
= -6.1A
= -6.7A
= -4.6A
28
8
3.3
240
2.8
200
1.5
110
mA
mA
μs
ns
μs
ns
μs
ns
Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%.
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HD1530JL
Table 5. TO-264 Mechanical Data
Figure 3. TO-264 Drawing
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HD1530JL
Table 6. Revision History
Date Revision Changes
05-July-2005 1 Initial release.
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HD1530JL
I
s
o
d
b
ct
t
ot
a
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grante
y implic ation or oth erwise under any pat ent or patent rights of STMicroelectron i cs. Specifications mentioned in this pub l ic at i on are subje
o change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are n
uthoriz ed for use as crit ic al component s i n l i fe support devic es or systems wi thout express written appr oval of STMicroelectron ics.
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All other nam es are the pro perty of their respective owners
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