Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HD122
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Description
The HD122 is designed for medium power linear and switching
applications.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 1/4
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current.............................................................................................................. 4 A
IC Collector Current (Pulse) .............................................................................................. 0.1 A
Electrical Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 100 - - V IC=1mA
*BVCEO 100 - - V IC=100mA
BVEBO 5 - - V IE=100uA
ICEO - - 2 mA VCE=50V
ICBO - - 1 mA VCB=100V
IEBO - - 2 mA VBE=5V
*VCE(sat)1 - - 2.5 V IC=1.5A, IB=30mA
*VCE(sat)2 - - 2.8 V IC=2A, IB=40mA
*VBE(on) - - 2.5 V IC=3A, VCE=3V
*hFE1 1000 - - IC=0.5A, VCE=3V
*hFE2 1000 - - IC=3A, VCE=3V
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 2/4
10000
1000
100
hFE
10
1
Collector Gain & Collector Current
25°C hFE @ VCE=4V
-40°C hFE @ VCE=4V
1 10 100 1000 10000
Collector Current-IC (mA)
Sturation Voltage & Collector Current
10000
-40¢XC V
BE(sat)
@ IC=100I
B
10000
CE(sat)
-40°C V
1000
Stu r at ion Voltage (m V)
100
100 1000 10000
@ IC=100I
Collector Current-IC (mA)
B
25°C V
CE(sat)
@ IC=100I
On Voltage & Collector Current
10000
BE(on)
Sturation Voltage & Collector Current
-40¢XC V
@ VCE=4V
B
BE(sat)
1000
Stu r at ion Voltage (m V)
100
100 1000 10000
25¢XC V
Collector Current-IC (mA)
@ IC=100I
B
Switching Time & Collector Current
10
VCC=30V, IC=250, IB1= -250I
Tstg
1
Switchin g T imes ( us)
B2
Tf
Ton
1000
On Voltage (mV)
100
10 100 1000 10000
BE(on)
25¢XC V
Collector Current-IC (mA)
@ VCE=4V
Capacitance & Reverse-Biased Voltage
1000
100
Capac itance (pF)
Cob
0.1
110
Collector Current-IC (A)
10
0.1 1 10 100
Reverse- Biased Vol t a ge (V)
HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 3/4
100000
Safe Operating Area
PT=1ms
10000
PT=100ms
1000
100
Collector Current-IC (mA)
PT=1s
10
1
1 10 100
Forw ar d - VCE ( V)
1.2
Power Derating
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Pow er Diss ipa tion
0.3
PD/PD(max) -- Normalized
0.2
0.1
0
0 50 100 150 200
Temperature (°C) -- Ta/Tc
HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 4/4
Marking :
A
D
C
N
M L K
E
F
3
2
1
O
H
G
J
B
I
HSMC Logo
Part Number
Date Code
Ink Marking
Style : Pin 1.Emitter 2.Collector 3.Base
Product Series
Rank
3-Lead TO-126ML Plastic Package
DIM
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
e Code : D
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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