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HCTS244T
Data Sheet July 1999 File Number
Radiation Hardened Octal Buffer/Line
Driver, Three-State
Intersil‘s Satellite Applications FlowTM (SAF) devices are
fully tested and guaranteed to 100kRAD total dose. These
QML Class T devices are processed to a standard flow
intended to meet the cost and shorter lead-time needs of
large volume satellite manufacturers, while maintaining a
high level of reliability.
The Intersil HCTS244T is a Radiation Hardened NonInverting Octal Buffer/Line Driver, Three-State, with two
active-low output enables.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HCTS244T are
contained in SMD 5962-95744. A “hot-link” is provided from
our website for downloading.
www.intersil.com/spacedefense/ne wsafc lasst.asp
Intersil‘s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
TEMP.
ORDERING
NUMBER
5962R9574401TRC HCTS244DTR -55 to 125
5962R9574401TXC HCTS244KTR -55 to 125
NOTE:
Minimumorderquantity for -T is150 units through
distribution, or 450 units direct.
PART
NUMBER
RANGE
(oC)
4618.1
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
5
- Gamma Dose (γ) 1 x 10
RAD(Si)
- Latch-Up Free Under Any Conditions
- SEP Effective LET No Upsets: >100 MEV-cm
- Single Event Upset (SEU) Immunity < 2 x 10
2
/mg
-9
Errors/Bit-Day (Typ)
• 3 Micron Radiation Hardened CMOS SOS
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
-V
= 0.8V Max
IL
-VI
= V
H
• Input Current Levels Ii ≤ 5mA at V
CC/2
Min
OL
, V
OH
Pinouts
HCTS244DTR (SBDIP), CDIP2-T20
TOP VIEW
OE
A0
Y3
A1
Y2
A2
Y1
A3
Y0
GND
1
1
2
1
3
2
4
1
5
2
6
1
7
2
8
1
9
2
10
20
V
CC
19
OE
2
18
Y0
1
17
A3
2
16
Y1
1
15
A2
2
14
Y2
1
13
A1
2
12
Y3
1
11
A0
2
HCTS244KTR (FLATPACK), CDFP4-F20
TOP VIEW
OE
1
A0
1
Y3
2
A1
1
Y2
2
A2
1
Y1
2
A3
1
Y0
2
GND
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
120
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3
4
5
6
7
8
9
10
19
18
17
16
15
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| Copyright © Intersil Corporation 1999
V
CC
OE
2
Y0
1
A3
2
Y1
1
A2
2
Y2
1
A1
2
Y3
1
A0
2
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Functional Diagram
HCTS244T
1OE
1Y0 1Y1 1Y2 1Y3 2Y0 2Y1 2Y2 2Y3
NPNPNPNPPNPNPNPN
1
2 4 6 8 11 13 15
1A0 1A1 1A2 1A3 2A0 2A1 2A2 2A3
357912141618
19
2OE
17
TRUTH TABLE
INPUTS OUTPUT
1OE, 2OE A Y
LLL
LHH
HXZ
H = High Voltage Level.
L = Low Voltage Level.
X = Immaterial.
Z = High Impedance.
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Die Characteristics
HCTS244T
DIE DIMENSIONS:
(2743µm x 2692µm x 533µm ±51µm)
108 x 106 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11.0k
Å ±1kÅ
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
1A1 (4)
2Y2 (5)
2Y3
(3)
1A0
(2)
HCTS244T
1OE
(1)
PASSIVATION:
Type: Silox (S
Thickness: 13.0k
)
iO2
Å ±2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
264
PROCESS:
CMOS SOS
V
(20)
CC
2OE
(19)
(18) 1Y0
(17) 2A3
(16) 1Y1
1A2 (6)
(15) 2A2
2Y1 (7)
(14) 1Y2
(8) (9) (10) (11) (12) (13)
1A3 2Y0 GND 2A0 1Y3 2A1
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask
series for the HCTS244 is TA14402A.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only .Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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