Datasheet HCF4555B Datasheet (STMicroelectronics)

Page 1
HCF4555B
DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXER
OUTPUT HIGH ON SELECT
■ EXPANDABLE WITH MULTIPLE PACKAGES
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ QUIESCENT CURRENT SPECIFIED UP TO
20V
■ 5V, 10V AND 15V PARAMETRIC RAT INGS
■ INPUT LEAKAGE CURRENT
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■
MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIF ICATIONS FOR DESCRIPTI ON OF B SERI ES CMOS DEVICES"
DESCRIPTION
The HCF4555B is a m onolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4555B is a dual 1 of 4 decoder/ demultiplexer. Each decoder has two select inputs (A and B), an Enabl e input (E
), and four mutually
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4555BEY
SOP HCF4555BM1 HCF4555M013TR
exclusive outputs. O n the HCF4555B the ou tputs are high on select. When the Enable input is high, the outputs is low regardless of the state of the select inputs A and B.
PIN CONNECTION
1/10September 2001
Page 2
HCF4555B
IINPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
2, 3 A, B Select Inputs (1/2 of dual)
1E
4, 5, 6, 7 Q0 to Q3 Outputs (1/2 of dual)
14, 13 A, B Select Inputs (1/2 of dual)
15 E
12, 11, 10, 9 Q0 to Q3 Outputs (1/2 of dual)
8
16
TRUTH TABLE
INPUTS ENABLE SELECT OUTPUTS
V
SS
V
DD
Enable Input (1/2 of dual)
Enable Input (1/2 of dual)
Negative Supply Voltage Positive Supply Voltage
E
LLLLLLH LLHLLHL LHLLHLL LHHHLLL HXXLLLL
X : Don’t Care
B A Q3 Q2 Q1 Q0
FUNCTIONAL DIAGRAM
2/10
Page 3
LOGIC DIAGRAM
HCF4555B
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
V
Power Dissipation per Output Transistor 100 mW
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values ar e referred t o V
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
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Page 4
HCF4555B
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.04 5 150 150
L
V
(V)
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.04 10 300 300 0/15 15 0.04 20 600 600 0/20 20 0.08 100 3000 3000
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
Low Level Output
V
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
High Level Input
V
IH
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
V
IL
Low Level Input Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
I
OH
Output Drive Current
0/5 2.5 <1 5 -1.36 -3.2 -1.1 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36 0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9 0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
I
I
Current
C
Input Capacitance
I
The Noi se Margin for both "1" and "0 " le vel is: 1V min. wi th VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
Any Input 5 7.5 pF
±10
-5
-40 to 85°C -55 to 125°C
±0.1 ±1 ±1 µA
Unit
µA
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
t
PLH tPHL
t
PLH tPHL
t
TLH tTHL
(*) Typical temperat ure coeffici ent for all VDD value is 0.3 %/°C.
Propagation Delay Time 5
Propagation Delay Time 5
Transition Time 5 100 200
4/10
(V)
V
DD
15 70 140
15 65 130
15 40 80
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
220 440
A or B Input to any Output
ns10 95 190
200 400
Input to any Output
E
ns10 85 170
ns10 50 100
Page 5
TYPICAL APPLICATIONS
1 OF 4 LINE DATA DEMULTIPLEXER USING HCF4555B
TRUTH TABLE
B A Q0 Q1 Q2 Q3
LLDATALLL
LH LDATAL L H L L L DATA L HHLLLDATA
1 OF 8 DECODER USING HCF4555B
TRUTH TABLE
Inputs Outputs
Select Inputs
HCF4555B
Outputs
CBA01234567
LLLHLLLLLLL LLHLHLLLLLL LHLLLHLLLLL
LHHLLLHLLLL HLLLLLLHLLL HLHLLLLLHLL HHLLLLLLLHL HHHLLLLLLLH
5/10
Page 6
HCF4555B
1 OF 16 DECODER USING HCF4555B AND HCF4556B
TRUTH TABLE
INPUTS Q OUTPUTS
EDCBA0 123456789101112131415
000001000000000000000 000010100000000000000 000100010000000000000 000110001000000000000 001000000100000000000 001010000010000000000 001100000001000000000 001110000000100000000 010000000000010000000 010010000000001000000 010100000000000100000 010110000000000010000 011000000000000001000 011010000000000000100 011100000000000000010 011110000000000000001 1XXXX0000000000000000
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and p robe capacit ance)
= 200KΩ
R
L
= Z
R
of pulse generator (typically 50Ω)
T
OUT
6/10
Page 7
HCF4555B
WAVEFORM 1 : PROPAGATION DELAY TIMES (INPUT TO Q3 OUTPUT) (f=1MHz; 50% duty cycle)
WAVEFORM 2 : PROPAGATION DELAY TIMES (E
INPUT TO Q3 OUTPUT) (f=1 MHz; 5 0 % du ty cy cl e)
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Page 8
HCF4555B
Plastic DIP-16 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335 e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201 L 3.3 0.130 Z 1.27 0.050
8/10
P001C
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SO-16 MECHANICAL DATA
HCF4555B
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244 e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8° (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
PO13H
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HCF4555B
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li cense is granted by imp lication or otherwise under a ny patent or patent rig hts of STMicroelectronics. Specificat ions mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or systems without express written approval of STMicroelectronics.
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