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HCF4512B
8 CHANNEL DATA SELECTOR
■ 3-STATE OUTPUT
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ QUIESCENT CURRENT SPECIF. UP TO 20V
■ 5V , 10V AND 15V P ARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
HCF4512B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP pack ages.
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4512BEY
SOP HCF4512BM1 HCF4512M013TR
HCF4512B is an 8-channel data selector featuring
a three-state output that can interface directly
with, and drive, data lines of bus oriented systems.
PIN CONNECTION
1/9October 2002
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HCF4512B
IINPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 2, 3, 4, 5,
6, 7, 9
11, 12, 13 A, B, C Select Control
10 INHIBIT Inhibit Output
15
14
8
16
FUNCTIONAL DIAGRAM
D0 to D7 Channel Inputs
3-STATE
DISABLE
SEL OUT-
PUT
V
SS
V
DD
3 State Disable Output
Select Output
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
SELECT CONTROL
ABC
LLL L L D0
HLL L L D1
LHL L L D2
HHL L L D3
LLH L L D4
HLH L L D5
LHH L L D6
HHH L L D7
XXX H L 0
XXX X H Z
X : Don’t Care
Z : High Impedance
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INHIBIT 3-STATE DISABLE SELECT OUTPUT
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LOGIC DIAGRAM
HCF4512B
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
10 mA
±
V
Power Dissipation per Output Transistor 100 mW
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
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HCF4512B
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.04 5 150 150
L
V
(V)
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.04 10 300 300
0/15 15 0.04 20 600 600
0/20 20 0.08 100 3000 3000
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
Low Level Output
V
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
High Level Input
V
IH
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
V
IL
Low Level Input
Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
I
OH
Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.1 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink
Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
I
I
Current
I
3-State Output
OZ
Leakage Current
C
Input Capacitance
I
The Noi se Margin fo r both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
0/18 0/18 18
Any Input 5 7.5 pF
-5
10
±
-4
10
±
-40 to 85°C -55 to 125°C
0.1
±
0.4
±
1
±
12
±
Unit
A
µ
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
1
±
12
±
A
µ
A
µ
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HCF4512B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
t
PHL tPLH
t
PHL tPLH
t
PHL tPLH
t
PZL tPLZ
t
PHZ tPZH
t
THL tTLH
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Propagation Delay Time
Inhibit to Output
Propagation Delay Time
"A" select to Output
Propagation Delay Time
Data to Output
3-State Disable Delay
Time
Transition Time 5 100 200
(V)
V
DD
5 140 280
15 50 100
5 200 400
15 60 120
5 180 360
15 55 110
560120
15 20 40
15 40 80
TEST CIRCUIT
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
ns10 70 140
ns10 85 170
ns10 75 150
ns10 30 60
ns10 50 100
TEST SWITCH
, t
t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL = 50pF or equivalent (in cludes jig and probe capac i t ance)
R
= 200K
Ω
L
= Z
R
of pulse generator (typically 50Ω)
T
OUT
Open
V
DD
V
SS
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HCF4512B
WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycl e )
WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
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HCF4512B
Plastic DIP-16 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
P001C
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HCF4512B
SO-16 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45˚ (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S ˚ (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8
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PO13H
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HCF4512B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for t he
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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