SYNCHRONOUS TO BOTH POSITIVE AND
NEGATIVE CLOCK EDGES FOR
CASCADING
■ MEDIUM SPEED OPERATION 5MHz at10V
■ QUIESCENT CURRE NT SPECIFIED UP TO
20V
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ 5V, 10V AND 15V PARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD=18VTA= 25°C
I
■ 100% T ESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4094B is a monolithic integrated circuit
fabricatedinMetalOxideSemiconductor
technology available in DIP and SOP packages.
The HCF4094B is an 8 stages serial shift register
having a storage latch a ssociated with each stage
for strobing data from the serial input to parallel
buffered 3-state o utp uts. The parallel outputs may
be connected directly to common bus lines. Data
HCF4094B
WITH 3-STAT E OUTPUTS
DIPSOP
ORDER CODES
PACKAGETUBET & R
DIPHCF4094BEY
SOPHCF4094BM1HCF4094M013TR
is shifted on positive clock transition. The data in
each shift register stage is transfe rred to the
storage register whe n the STROBE input is high.
Data in the storage register appears at the outputs
whenever the OUTPUT-ENABLE signal is high.
Two serial outputs are available for c as cading a
number of HCF4094B devices. Data is available
at the Q
edges to allow for high speed operation in
cascaded system in which the clock rise time is
fast. The sam e serial informat ion, available at the
Q’
S
provides a means for cascading HCF4094B
devices when the clock rise time is slow.
X : Don’tCare
OC : Open Circuit
* At the positive clock edge information on the 7th shift register stage is transferred to the 8th register stage and the QSoutput.
2/12
PARALLEL OUTPUTSSERIAL OUTPUTS
Q
1
Q
n
-1
Q
n
-1
Q
n
Q*
S
Q7No Change
Q7No Change
Q’
S
Page 3
LOGIC DIAGRAM
HCF4094B
TIMING CHART
3/12
Page 4
HCF4094B
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
P
T
T
stg
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values arereferredto V
(*) 500mW at 65
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
T
Supply Voltage
DD
DC Input Voltage-0.5 to VDD+ 0.5
I
DC Input Current
I
I
Power Dissipation per Package500 (*)mW
D
-0.5 to +22V
± 10mA
Power Dissipation per Output Transistor100mW
Operating Temperature
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
systems without express written approval of STMicroelectronics.
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