Datasheet HCF4063BE Specification

Page 1
4-BIT MAGNITUDE COMPARATOR
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.STANDARDB-SERIES OUTPUTDRIVE
.EXPANSION TO8-16V...4NBITSBYCASCAD-
ING UNITS
TWO 4-BITWORDS IN 250ns (typ.) AT 10V
.INPUT CURRENT OF 100nAAT 18VAND 25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVESTANDARDN°13A,”STANDARDSPE­CIFICATIONS FOR DESCRIPTION OF ”B” SERIESCMOS DEVICES”
HCC/HCF4063B
EY
(PlasticPackage)F(Ceramic FritSeal Package)
M1
(MicroPackage)
ORDER CODES :
HCC4063BF HCF4063BM1 HCF4063BEY HCF4063BC1
(PlasticChipCarrier)
C1
DESCRIPTI ON TheHCC4063B (extended temperature range) and
HCF4063B (intermediate temperature range) are
available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4063B is a low-power 4-bit magnitude comparator designedfor use in computerand logic applications that requirethecomparison oftwo4-bit words. This logic circuit determines whether one 4­bit word(Binary or BCD) is ”less than”, ”equal to”or ”greater than” a second 4-bit word. The HCC/HCF4063B has eight comparing inputs (A3, B3, through A0, B0), three outputs (A< B, A = B, A > B) and three cascading inputs (A < B, A =B, A> B) that permit systems designers to expand the comparator function to 8, 12, 16...4N bits.When a single HCC/HCF4063B is used, the cascading in­puts areconnected as follows: (A < B) = low, (A =B) = high, (A > B) =low.
For words longer than4 bits, HCC/HCF4063B de­vices may be cascaded by connecting the outputs oftheless-significant comparator tothecorrespond­ing cascading inputs of the more-significant com­parator. Cascading inputs(A < B, A = B, and A> B) on theleastsignificant comparator areconnectedto a low, a high,and a lowlevel, respectively.
PIN CONNECTIONS
June1989
1/12
Page 2
HCC/HCF4063B
FUN CTIONAL DIAG R A M
ABSOLUTE MAXIMUM RATIN GS
Symbol Parameter Value Unit
* Supply Voltage :HC C Types
V
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
DC Input Current (any one input) ± 10 mA
I
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor for T
T
Operating Temperature : HCC Types
op
= Full Package-temperature Range
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20 – 0.5 to + 18
200 100
– 55 to + 125
–40to+85
V V
mW mW
°C °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/12
V
Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
T
Operating Temperature : HCC Types
op
HCF Types
3to18 3to15
DD
– 55 to + 125
–40to+85
V V
V
°C °C
Page 3
LOGI C DI AGRAM
HCC/HCF4063B
TRUTH TABLE
Inputs
Compari n g Cascading
A3, B3 A2, B2 A1, B1 A0, B0 A < B A = B A > B A < B A = B A > B
A3 > B3 A3 = B3 A3 = B3 A3 = B3
A3 = B3 A3 = B3 A3 = B3
A3 = B3 A3 = B3 A3 = B3 A3 < B3
X = Don’t care 1 ≡ Highstate 0 ≡ Low state.
X A2 > B2 A2 = B2 A2 = B2
A2 = B2 A2 = B2 A2 = B2
A2 = B2 A2 = B2 A2 < B2
X
X
X A1 > B1 A1 = B1
A1 = B1 A1 = B1 A1 = B1
A1 = B1 A1 < B1
X
X
X X X
A0 > B0 A0 = B0
A0 = B0 A0 = B0
A0 < B0
X X X
X X X X
0 0 1
X X X X
X X X X
0 1 0
X X X X
X X X X
1 0 0
X X X X
0 0 0 0
0 0 1
1 1 1 1
Outputs
0 0 0 0
0 1 0
0 0 0 0
1 1 1 1
1 0 0
0 0 0 0
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Page 4
HCC/HCF4063B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value
Symbol Paramete r
(V) (V) (µA) (V)
I
L
Quiescent Current
HCC Types
0/ 5 5 5 0.04 5 150 0/10 10 10 0.04 10 300 0/15 15 20 0.04 20 600 0/20 20 100 0.08 100 3000
0/ 5 5 20 0.04 20 150
HCF Types
0/10 10 40 0.04 40 300 0/15 15 80 0.04 80 600
V
OH
Output High Voltage
0/ 5 < 1 5 4.95 4.95 4.95 0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95
V
OL
Output Low Voltage
5/0 < 1 5 0.05 0.05 0.05 10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05
V
IH
Input High Voltage
V
IL
Input Low Voltage
I
OH
Output Drive Current
HCC Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36 0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9 0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36 0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9 0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
I
OL
Output Sink Current
HCC Types
0/ 5 0.4 5 0.64 0.51 1 0.36 0/10 0.5 10 1.6 1.3 2.6 0.9 0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
HCF Types
0/10 0.5 10 1.3 1.1 2.6 0.9 0/15 1.5 15 3.6 3.0 6.8 2.4
I
IH,IIL
*T
Low
*T
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
Input leakage Current
C
I
=–55°CforHCC device : – 40°CforHCF device.
= + 125°CforHCC device : + 85°CforHCF device.
Input Capacitance Any Input 5 7.5 pF
HCC Types
HCF Types
0/18
0/15
V
V
I
O
|IO|V
DD
T
* 25°CT
Low
Min. Max. Min. Typ. Max. Min. Max.
0.5/4.5 < 1 5 3.5 3.5 3.5 1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
4.5/0.5 < 1 5 1.5 1.5 1.5 9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
–5
18 ± 0.1 ±10
± 0.1 ± 1
Any Input
–5
15 ± 0.3 ±10
± 0.3 ± 1
High
*
Unit
µA
V
V
V
V
mA
mA
µA
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Page 5
HCC/HCF4063B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficient for all VDDvalues is 0.3%/°C, all input rise and fall times = 20ns)
Symbol Parameter
t
PLH,tPHL
t
TLH,tTHL
Propagation Delay Time Comparing Inputs to
Transition Time 5 100 200
Minimum Output High (source)Current Charac­teristics.
Test Conditions Value
V
(V) Min. Typ. Max.
DD
5 625 1250
Outputs
Cascading Inputs to Outputs
10 250 500 15 175 350
5 500 1000 10 200 400 15 140 280
10 50 100 15 40 80
Minimum Output Low (sink)Current Charac­teristics.
Unit
ns
ns
TypicalOutput High (source) Current Charac­teristics.
TypicalOutput Low (sink) Current Characteristics.
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Page 6
HCC/HCF4063B
TypicalPropagation Delay Time vs. VDD. TypicalPropagation Delay Time vs. CL.
TypicalTransitionTime vs. Load Capacitance. TypicalPower Dissipation Characteristics.
Dynamic Power Dissipation.
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Page 7
TYPICAL APPLICA TI O N
TYPICALSPEED CHARACTERISTICS OF A 12-BIT COMPARATOR
HCC/HCF4063B
t
p (TOT.)=tp
VDD= 10V (3 stages) = 250 + 2 x (200) = 650ns (typ.).
(COMPARE INPUTS) + 2 x tp(CASCADEINPUTS) at CL= 50pF (each output),
TEST CIRCUITS
QuiescentDevice Current. Noise Immunity.
Input Leakage Current.
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Page 8
HCC/HCF4063B
Plastic DIP16 (0.25) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
mm inch
8/12
P001C
Page 9
Ceramic DIP16/1 MECHANICAL DATA
HCC/HCF4063B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787 B 7 0.276 D 3.3 0.130 E 0.38 0.015
e3 17.78 0.700
F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012 M 0.51 1.27 0.020 0.050 N 10.3 0.406
P 7.8 8.05 0.307 0.317
Q 5.08 0.200
mm inch
P053D
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HCC/HCF4063B
SO16 (Narrow) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068 a1 0.1 0.2 0.004 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8°(max.)
mm inch
10/12
P013H
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PLCC20 MECHANICAL DATA
HCC/HCF4063B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356
D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015 G 0.101 0.004 M 1.27 0.050
M1 1.14 0.045
mm inch
P027A
11/12
Page 12
HCC/HCF4063B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproductsare notauthorized for use ascritical componentsinlife supportdevices or systemswithout express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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