Page 1
QUAD N OR R-S LATC H-4043B
QUAD N AND R-S LATC H-4 044B
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.3-LEVEL OUTPUTS WITHCOMMON OUTPUT
ENABLE
.SEPARATE SET AND RESET INPUT FOR
EACHLATCH
.5V, 10V,AND 15V PARAMETRIC RATINGS
.NOR AND NAND CONFIGURATIONS
.INPUT CURRENTOF 100nAAT18V AND 25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVESTANDARDN°13A,”STANDARDSPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
HCC/HCF4043B
HCC/HCF4044B
QUAD 3-STATER-S LATCHES
EY
(Plastic Package)
M1
(MicroPackage)
ORDER CODES :
HCC40XXBF HCF40XXBM1
HCF40XXBEY HCF40XXBC1
(CeramicFrit Seal Package)
(Plastic Chip Carrier)
F
C1
DESCRIPTI ON
The HCC4043B, HCC4044B, (extended tempera-
ture range) and the HCF4043B, HCF4044B (inter-
mediate temperature range) are monolithic
integrated circuits, available in 16-lead dual in-line
plastic or ceramic package and plastic micropackage. The HCC/HCF4043B types are quad cross-
coupled 3-state COS/MOS NOR latches and the
HCC/HCF4044B types are quad cross-coupled 3state COS/MOS NAND latches. Each latch has a
separate Q output and individual SET and RESET
inputs. The Q outputs are controlledby a common
ENABLE input.A logic”1” or”high” onthe ENABLE
input connectsthe latch states to theQ outputs. A
logic ”0” or”low” on the ENABLEinput disconnects
the latch states from the Q outputs, resulting in an
open circuit condition on the Q outputs. The open
circuit feature allows common bussing of the outputs.
PIN C ONN ECT IONS
4043B
4044B
June1989
1/13
Page 2
HCC/HCF4043B/4044B
FUN CTIONAL DIAG R A MS
4043B 4044B
ABSOLUTE MAXIMUM RATIN GS
Symbol Parameter Value Unit
V
* Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage – 0.5 to VDD+ 0.5 V
i
I
DC Input Current (any one input) ± 10 mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for Top= Full Package-temperature Range
T
Operating Temperature : HCC Types
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to VSSpin voltage.
Storage Temperature – 65 to + 150 °C
stg
– 0.5 to + 20
– 0.5 to + 18
200
100
– 55 t o + 125
–40to+85
V
V
mW
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
T
2/13
Supply Voltage :HC C Types
DD
HCF Types
V
Input Voltage 0 to V
I
Operating Temperature : HCC Types
op
HCF Types
3to18
3to15
DD
– 55 t o + 125
–40to+85
V
V
V
°C
°C
Page 3
LOGI C DI AGRAMS
HCC/HCF4043B/4044B
4044B 4043B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operatingconditions)
Test Conditions Valu e
Symbol Parameter
(V) (V) (µA) (V)
I
L
Quiescent
Current
HCC
Types
0/ 5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
0/20 20 20 0.04 20 600
HCF
Types
OH
Output High
V
Voltage
0/ 5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
0/ 5 < 1 5 4.95 4.95 4.95
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
V
OL
Output Low
Voltage
5/0 < 1 5 0.05 0.05 0.05
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
IH
Input High
V
Voltage
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
V
V
I
O
|IO|V
DD
T
* 25°CT
Low
Min. Max. Min. Typ. M ax. Min. Max.
0.5/4.5 < 1 5 3.5 3.5 3.5
1/9 < 1 10 7 7 7
1.5/13.5 < 1 15 11 11 11
High
*
Unit
µA
V
V
V
3/13
Page 4
HCC/HCF4043B/4044B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions Valu e
Symbol Parameter
(V) (V) (µA) (V)
IL
Input Low
V
Voltage
I
OH
Output
Drive
Current
HCC
Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
HCF
Types
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
OL
Output
Sink
Current
HCC
Types
I
HCF
Types
I
IH,IIL
Input
leakage
Current
HCC
Types
HCF
Types
I
OH
3-state
Output
HCC
Types
HCF
Types
Input Capacitance Any Input 5 7.5 pF
C
I
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
0/ 5 0.4 5 0.64 0.51 1 0.36
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
0/18
0/15
0/18 0/18 18 ± 0.4 ±10
0/15 0/15 15 ± 1.0 ±10
V
V
I
O
|IO|V
DD
T
* 25°CT
Low
Min. Max. Min. Typ. M ax. Min. Max.
4.5/0.5 < 1 5 1.5 1.5 1.5
9/1 < 1 10 3 3 3
13.5/1.5 < 1 15 4 4 4
18 ± 0.1 ±10
–5
± 0.1 ± 1
Any Input
15 ± 0.3 ±10
–5
± 0.3 ± 1
–4
± 0.4 ± 12
–4
± 1.0 ± 7.5
High
*
Unit
V
mA
mA
µA
µA
DYNAMIC ELECTRICAL CHARACTERISTICS (T
=25°C, CL= 50pF, RL= 200kΩ,
amb
typical temperature coefficient for all VDDvalues is 0.3%/°C, all input rise and fall times = 20ns)
Symbol Parameter
t
PLH,tPHL
Propagation Delay Time
(SET or RESET to Q)
t
PZH,tPHZ
3-state Propagation Delay Time
(ENABLE to Q)
4/13
Test Co n di t i ons Value
V
(V) Min. Typ. Max.
DD
5150300
10 70 140
15 50 100
5115230
10 55 110
15 40 80
Unit
ns
ns
Page 5
DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
HCC/HCF4043B/4044B
Symbol Parameter
t
PL Z,tPZL
t
TLH,tTHL
t
W
Propagation Delay Time 5 90 180
Transition Time 5 100 200
Pulse Width (SET or RESET) 5 160 80
Test Co n di t i ons Value
V
(V) Min. Typ. Max.
DD
10 50 100
15 35 70
10 50 100
15 40 80
10 80 40
15 40 20
Typical Output Low (sink)Current. Minimum Output Low (sink) Current Charac-
teristics.
Unit
ns
ns
ns
Typical Output High (source)Current Characteristics.
Minimum Output High (source) Current Characteristics.
5/13
Page 6
HCC/HCF4043B/4044B
Typical TransitionTime vs. Load Capacitance. TypicalPropagation Delay Timevs. LoadCapacit-
ance (SET, RESETto Q, Q).
TypicalPower Dissipation/device vs. Frequency.
Switch Bounce Eliminator.
4043B
6/13
4044B
Page 7
APPLICATIONS
MULTIPLEBUS STORAGE.
HCC/HCF4043B/4044B
7/13
Page 8
HCC/HCF4043B/4044B
TEST CIRCUITS
QuiescentDevice Current. Input Voltage.
Input Current.
EnablePropagation Delay Time and Waveforms.
Test IN I N A
8/13
t
PHZ
t
PLZ
t
PZH
t
PZL
Z = High impedance.
V
DD
V
SS
V
DD
V
SS
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
Page 9
HCC/HCF4043B/4044B
Plastic DIP16 (0.25) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
mm inch
P001C
9/13
Page 10
HCC/HCF4043B/4044B
Ceramic DIP16/1 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787
B 7 0.276
D 3.3 0.130
E 0.38 0.015
e3 17.78 0.700
F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406
P 7.8 8.05 0.307 0.317
Q 5.08 0.200
mm inch
10/13
P053D
Page 11
SO16 (Narrow) MECHANICAL DATA
HCC/HCF4043B/4044B
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8°(max.)
mm inch
P013H
11/13
Page 12
HCC/HCF4043B/4044B
PLCC20 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356
D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015
G 0.101 0.004
M 1.27 0.050
M1 1.14 0.045
mm inch
12/13
P027A
Page 13
HCC/HCF4043B/4044B
Information furnished isbelieved tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties which mayresults from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publicationare subject to changewithout notice.This publication supersedesand replaces allinformation previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized for use ascritical componentsin life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994SGS-THOMSON Microelectronics - All RightsReserved
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13/13
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