Page 1
HCF4030B
QUAD EXCLUSIVE-OR GATE
■ MEDIUM SPEED OPERATION - t
65ns (TYP.) at CL = 50pF and V
■ LOW OUTPUT IMPEDANCE : 500 Ω (TYP. ) at
V
DD-VSS =
■ QUIESCENT CURRENT SPECIFIED UP TO
10V
= t
PHL
DD-VSS =
PLH =
10V
20V
■ 5V, 10V AND 15V PARAMETRIC RAT INGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
HCF4030B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF4030B types consist of four indipendent
exclusive-OR gates integrated on a single
monolithic silicon chip. Each exclusive-OR gate
consists of four n-channel and four p-channel
enhancement-type transistors. All inputs and
outputs are protected against electrostatic effects.
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4030BEY
SOP HCF4030BM1 HCF4030M013TR
PIN CONNECTION
1/10September 2002
Page 2
HCF4030B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
2, 1, 5, 6, 8,
9, 12, 13
3, 4, 10, 11 J, K, L, M Data Outputs
7
14
TRUTH TABLE
IN1 IN2 OUT
LL L
LH H
HL H
HH L
FUNCTIONAL DIAGRAM
A, B, C, D, E,
F, G, H
V
SS
V
DD
Data Inputs
Negative Supply Voltage
Positive Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
2/10
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
10 mA
±
Power Dissipation per Output Transistor 100 mW
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
V
Page 3
HCF4030B
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
DC SPECIFICATIONS
Symbol Parameter
I
L
V
OH
V
OL
V
IH
V
IL
I
OH
I
OL
I
I
C
I
The Noi se Margin for bot h " 1" and "0" level is: 1V min. wit h VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
Test Condition Value
V
(V)
T
|
V
I
O
(V)
|I
O
(µA)
V
DD
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
= 25°C
Quiescent Current 0/5 5 0.02 4 4 30
0/10 10 0.02 8 8 60
0/15 15 0.02 16 16 120
0/20 20 0.04 20 20 600
Output High
0/5 <1 5 4.95 4.95 4.95
Voltage
0/15 <1 15 14.95 14.95 14.95
Output Low Voltage 5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
Input High Voltage 0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
Input Low Voltage 4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
Output Sink
0/5 0.4 <1 5 0.44 1 0.36 0.36
Current
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
Current
Input Capacitance
0/18 Any Input 18
Any Input 5 7.5 pF
-5
0.1
±
10
±
1
±
1
±
V
Unit
A
µ
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
A
µ
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
t
PLH tPHL
t
TLH tTHL
Propagation Delay Time 5 140 280
Output Transition Time 5 100 200
V
(V)
DD
15 50 100
15 40 80
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
ns10 65 130
ns10 50 100
3/10
Page 4
HCF4030B
TYPICAL APPLICATION : EVEN PARITY- BIT GENERATOR
TYPICAL APPLICATION : EVEN PARITY- C HEC KER
TYPICAL APPLICATION : ODD-PARITY-BIT GENERATOR
4/10
Page 5
TYPICAL APPLICATION : ODD-PARITY-CHECKER
TYPICAL APPLICATION : 8-BIT COMPARATOR
HCF4030B
5/10
Page 6
HCF4030B
TYPICAL APPLICATION : 8-BIT TWO’S COMPLEMENT ADDER-SUBSTRACTOR
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitanc e)
= 200K
R
R
Ω
L
= Z
of pulse generator (typically 50Ω)
T
OUT
6/10
Page 7
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
HCF4030B
7/10
Page 8
HCF4030B
Plastic DIP-14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
8/10
P001A
Page 9
SO-14 MECHANICAL DATA
HCF4030B
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45˚ (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0. 228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4. 0 0.149 0.157
G 4.6 5. 3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S ˚ (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8
PO13G
9/10
Page 10
HCF4030B
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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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