Datasheet HCF4019B Datasheet (ST)

Page 1
HCF4019B
QUAD AND/OR SELECT GATE
■ MEDIUM-SPEED OPERATION
t
= 60ns (Typ.) at VDD = 10V
PD
■ QUIESCENT CURRENT SPECIFIED UP TO
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ 5V, 10V AND 15V PARAMETRIC RAT INGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIF ICATIONS FOR DESCRIPTI ON OF B SERI ES CMOS DEVICES"
DESCRIPTION
The HCF4019B is a m onolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4019B types are comprised of four AND/ OR select gate configurations, each consisting of two 2 input AND gates driving a single 2-input OR
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4019BEY
SOP HCF4019BM1 HCF4019M013TR
gate. Selection is ac compl ished by cont rol bi ts K and Kb. In addition to selection of either channel A or channel B information, the control bits can be applied simultaneously to accomplish the logical A+B function.
a
PIN CONNECTION
1/9September 2001
Page 2
HCF4019B
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
6, 4, 2, 15 A1 to A4 Data Inputs
7, 5, 3, 1 B1 to B4 Data inputs
10, 11,12, 13 D1 to D4 Data Outputs
, K
9, 14
8
16
K
a
V
SS
V
DD
Control bits
b
Negative Supply Voltage Positive Supply Voltage
TRUTH TABLE
CONTROL INPUTS OUTPUT
Ka Kb A1 to A4 B1 to B4 D1 to D4
HXHXH HXLXL XHXHH XHXLL
LLXXL
X : Don"t Care
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
V
Power Dissipation per Output Transistor 100 mW
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values ar e referred t o V
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
2/9
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
Page 3
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.02 1 30 30
L
V
(V)
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.02 2 60 60 0/15 15 0.02 4 120 120 0/20 20 0.04 20 600 600
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
Low Level Output
V
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
High Level Input
V
IH
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
V
IL
Low Level Input Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
I
OH
Output Drive Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36 0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9 0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
I
I
Current
C
Input Capacitance
I
The Noi se Margin for both "1" and "0 " le vel is: 1V min. wi th VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
Any Input 5 7.5 pF
±10
-5
-40 to 85°C -55 to 125°C
±0.1 ±1 ±1 µA
HCF4019B
Unit
µA
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Param eter
t
PLH tPHL
t
TLH tTHL
(*) Typical temperat ure coeffici ent for all VDD value is 0.3 %/°C.
Propagation Delay Time 5 150 300
Output Transition Time 5 100 200
(V)
V
DD
15 50 100
15 40 80
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
ns10 60 120
ns10 50 100
3/9
Page 4
HCF4019B
TYPICAL APPLICATIONS
AND OR SELECTED GATING
SHIFT L E FT SHIFT RIGHT REGISTER
4/9
Page 5
TRUE COMPLEMENT SELECTOR
AND-OR EXCLUSIVE OR SELECTOR
HCF4019B
TRUTH TABLE
K[*] K[⊕] OUT
LLL H L A-B LHA⊕B H H A+B
5/9
Page 6
HCF4019B
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and p robe capacit ance)
= 200KΩ
R
L
R
= Z
of pulse generator (typically 50Ω)
T
OUT
6/9
Page 7
HCF4019B
Plastic DIP-16 (0.25) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. M AX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335 e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201 L 3.3 0.130 Z 1.27 0.050
P001C
7/9
Page 8
HCF4019B
SO-16 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 9.8 10 0.385 0.393 E 5.8 6.2 0.228 0.244 e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8° (max.)
MIN. TYP MAX. MIN. TYP. M AX.
mm. inch
8/9
PO13H
Page 9
HCF4019B
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li cense is granted by imp lication or otherwise under a ny patent or patent rig hts of STMicroelectronics. Specificat ions mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or systems without express written approval of STMicroelectronics.
Australi a - Brazil - Chin a - Finland - France - Germany - Hong Kon g - India - Italy - Japan - Malay si a - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STM icroelectronics - Pri n ted in Italy - A ll Ri g h ts Reserved
STMicr o el ectronics GROUP OF COMPANI ES
Singapo re - Spain - Sweden - Switzerland - Uni ted Kingdom
© http://www.st.com
9/9
Loading...