HCF4012B
DUAL 4 INPUT NAND GATE
■ PROPAGATION DELAY TIME
t
= 60ns (Typ.) at VDD = 10V
PD
■ BUFFERED INPUTS AND OUTPUTS
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ QUIESCENT CURRENT SPECIFIED UP TO
20V
■ 5V, 10V AND 15V PARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
The HCF4012B is a m onolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4012B DUAL 4-INPUT NAND GATE
provides the system designer with direct
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4012BEY
SOP HCF4012BM1 HCF4012M013TR
implementation of the NAND function and
supplement the existing family of CMOS gates. All
inputs and outputs are buffered.
PIN CONNECTION
1/7September 2001
HCF4012B
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
6, 8 NC Not Connected
2, 3, 4, 5 A, B, C, D Data Inputs
9, 10, 11, 12 E, F, G, H Data Inputs
1, 13 J, K Data Outputs
14
7
V
SS
V
DD
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
INPUTS OUTPUTS
A, B, C, D E, F, G, H J, K
LLH
LHH
HLH
HHL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
V
Power Dissipation per Output Transistor 100 mW
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values ar e referred to V
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
2/7
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.01 0.25 7.5 7.5
L
V
(V)
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.01 0.5 15 15
0/15 15 0.01 1 30 30
0/20 20 0.02 5 150 150
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
Low Level Output
V
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
High Level Input
V
IH
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
V
IL
Low Level Input
Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
I
OH
Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink
Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
I
I
Current
C
Input Capacitance
I
The Noi se Margin for both "1" and "0 " level is: 1V min. wi th VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
Any Input 5 7.5 pF
±10
-5
-40 to 85°C -55 to 125°C
±0.1 ±1 ±1 µA
HCF4012B
Unit
µA
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Param eter
t
PLH tPHL
t
TLH tTHL
(*) Typical temperat ure coefficient for all VDD value is 0.3 %/°C.
Propagation Delay Time 5 125 250
Output Transition Time 5 100 200
(V)
V
DD
15 45 90
15 40 80
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
ns10 60 120
ns10 50 100
3/7
HCF4012B
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacit ance)
R
= 200KΩ
L
R
= Z
of pulse generator (typically 50Ω)
T
OUT
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
4/7
HCF4012B
Plastic DIP-14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
P001A
5/7
HCF4012B
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
6/7
PO13G
HCF4012B
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by imp lication or otherwise under any patent or patent rig hts of STMicroelectronics. Specificat ions
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
Australi a - Brazil - China - Finland - F rance - Germany - Hong Kong - India - Italy - Jap an - Malaysia - Malta - Moro cco
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STM icroelectronics - Pri nted in Italy - A ll Rights Reser ved
STMicr o el ectronics GROUP OF COMPANI E S
Singapo re - Spain - Swe den - Switzerl and - United K ingdom
© http://www.st.com
7/7
Loading...