Page 1
HCF40106B
HEX SCHMITT TRIGGER
■ SCHMIT T TR IGGER ACTION WITH NO
EXTERNAL COMPONENTS
■ HYSTERESIS VOLTAGE (Typ.) :
0.9V at V
2.3V at V
3.5V at V
■ NOISE IMMUNITY GREATER THAN 50%
■ NO LIMIT ON INPUT RISE AND FALL TIME
■ LOW V
= 5V
DD
= 10V
DD
= 15V
DD
TO VSS CURRENT DURING
DD
SLOW INPUT RAMP
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ QUIESCENT CURRENT SPECIFIED UP TO
20V
■ 5V, 10V AND 15V PARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
The HCF401 06B is a mo nolithic integrate d circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF40106BEY
SOP HCF40106BM1 HCF40106M013TR
The HCF40106B consist of six Schmitt trigger
circuits. Each circuit functions a s an inverter with
Schmitt trigger action on the input. The trigger
switches at different points for positive and
negative going signals. The difference between
the positive going voltage (V
going voltage (V
).
(V
H
) is defined as hysteresis voltage
N
) and the n egative
P
PIN CONNECTION
1/9September 2001
Page 2
HCF40106B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1, 13A, B, C, D, E,
2, 4, 6, 8, 10,
12
7
14
TRUTH TABLE
INPUTS OUTPUTS
A to F G to L
HL
FUNCTIONAL DIAGRAM
F
G, H, I, J, K,
L
V
SS
V
DD
LH
Data Inputs
Data Outputs
Negative Supply Voltage
Positive Supply Voltage
2/9
Page 3
HCF40106B
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values ar e referred to V
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
Power Dissipation per Output Transistor 100 mW
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
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Page 4
HCF40106B
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.02 1 30 30
L
V
(V)
V
|I
|
I
O
(V)
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.02 2 60 60
0/15 15 0.02 4 120 120
0/20 20 0.04 20 600 600
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
Low Level Output
V
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
Positive Trigger
V
P
Threshold Voltage
5 2.2 2.9 3.6 2.2 3.6 2.2 3.6
15 6.8 8.8 10.8 6.8 10.8 6.8 10.8
Negative Trigger
V
N
Threshold Voltage
5 0.9 1.9 2.8 0.9 2.8 0.9 2.8
15 4 5.8 7.4 4 7.4 4 7.4
Hysteresis Voltage 5 0.3 0.9 1.6 0.3 1.6 0.3 1.6
V
H
15 1.6 3.5 5 1.6 5 1.6 5
I
OH
Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink
Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
I
I
Current
C
Input Capacitance
I
The Noi se Margin for bot h " 1" and "0" level is: 1V min. wit h VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
Any Input 5 7.5 pF
±10
-5
-40 to 85°C -55 to 125°C
±0.1 ±1 ±1 µA
Unit
µA
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V10 4.6 5.9 7.1 4.6 7.1 4.6 7.1
V10 2.5 3.9 5.2 2.5 5.2 2.5 5.2
V10 1.2 2.3 3.4 1.2 3.4 1.2 3.4
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
t
PLH tPHL
t
TLH tTHL
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Propagation Delay Time 5 140 280
Output Transition Time 5 100 200
4/9
V
(V)
DD
15 60 120
15 40 80
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
ns10 70 140
ns10 50 100
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TYPICAL APPLICATIONS
ASTABLE MULTIVIBRATOR MONOSTABLE MULTIVIBRATOR
WAVE SHAPER
HCF40106B
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Page 6
HCF40106B
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitanc e)
= 200KΩ
R
L
R
= Z
of pulse generator (typically 50Ω)
T
OUT
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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HCF40106B
Plastic DIP-14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
P001A
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HCF40106B
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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PO13G
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HCF40106B
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
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