JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
HCF40105B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP packages.
HCF40105B is a low power first-in-first-out (FIFO)
"elastic" storage register that can store 164-bit
words. It is capable of handling input and output
data at different shifting rates. This feature makes
it particularly useful as a buffer between
asynchronous systems. Each word position in the
register is clocked by a control flip-flop, which
stores a marker bit. "1" signifies that the position’s
data is filled and "0" denotes a vacancy in that
DIP
ORDER CODES
PACKAGETUBET & R
DIPHCF40105BEY
position. The control flip-flop dete cts the state of
the preceding flip-flop and c ommunicates its ow n
status to the succeeding f lip-flop. When a control
flip flop is in the "0" state and sees a "1" in the
preceding flip-flop, it generates a clock pulse that
transfers data from the preceding four data
latches into its own four data latches and resets
the preceding flip-flop to "0". The first and last
control flip-flops have buffered outputs. Since all
empty locations "bubble" automatically to the input
end, and all valid data ripples through to the output
end, the status of the first control flip-flop
(DATA-IN READY) indicates if the FIFO is full, and
the status of the last flip-flop (DATA-OUT READY)
indicates if the FIFO contains data. As the earliest
data is removed from the bottom of the data stack
(the output and), all data entered later will
automatically propagate (ripple) toward the
output.
PIN CONNECTION
1/12October 2002
Page 2
HCF40105B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
1
2DIRData-In Ready
3SIShift In
15SOShift Out
14DORData-Out Ready
4, 5, 6, 7D0 to D3Input Buffers
13, 12, 11,
10
9MRMaster Reset
8VSSNegative Supply Voltage
16VDDPositive Supply Voltage
FUNCTIONAL DIAGRAM
3-STATE
CONTROL
Q0 to Q3Output Buffers
3-State Control
TRUTH TABLE
CONTROL INPUTS
CLR
HHHH
HHHLCount Down
HHLXPreset on Next Positive Clock Transition
HLXX
LXXXClear to Maximum Count
X : Don’t Care
Clock connected t o Cl ock input
Synchronous Operation : changes occur on negative to positive clock transitions.
2/12
APESPECI/CE
PRESET MODEACTION
Inhibit Counter
Synchronous
Asynchronous
Preset Asynchronously
Page 3
LOGIC DIAGRAM
HCF40105B
TIMING CHART
3/12
Page 4
HCF40105B
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
T
Supply Voltage
DD
DC Input Voltage-0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package200mW
D
-0.5 to +22V
10mA
±
Power Dissipation per Output Transistor100mW
Operating Temperature
LOADING DATA
Data can be entered whenever the DATA-IN
READY (DIR) flag is high by a low to high
transition on the SHIFT-IN (SI) input. This input
must go low mom entarily before the next word is
accepted by the FIFO. The DIR flag will go low
momentarily until the data has been transferred to
the second location. The flag will remain low when
all 16-word locations are filled with valid data, and
further pulses on the SI in put will be ign ored until
DIR goes high.
UNLOADING DATA
As soon as the first word has rippled to the output,
DATA-OUT READY (DOR) goes high, and data
can be removed by a falling edge on the SO input.
This falling edge causes the DOR signal to go low
while the word on the output is dum ped and the
next word mov es to the output. As long as vali d
data is available in the FIFO, the DOR s ignal will
go high again signifying that the next word is ready
at the output. When t he FIFO is empt y, DOR will
remain low, and any further commands will be
ignored until a "1" marker ripples down to the last
control register, when DOR goe s high. Un loading
of data is inhibited while the 3-state control input is
high. The 3-state control signal should not be
shifted from high to low (data outputs turned on)
while the SHIFT-OUT is at logic "0". This level
change causes the first word to be shifted out
(unloaded) immediately and the data to be lost.
CASCADING
HCF40105B can be cascaded to form longer
registers simply by connect ing the DIR to SO a nd
DOR to SI. In the cascaded mode, a MASTER
RESET pulse must be applied after the supply
voltage is turned on. For w ords wider than 4 -bits,
the DIR and the DOR outputs must be gated
together with AND gates. T heir outputs drive the
SI and SO inputs in p arallel, if ex panding is done
in both directions.
3-STATE OUTPUTS
In order to f acilitate data busi ng, 3-state outputs
are provided on the data output lines, while the
load condition of the regi ster can be detected by
the state of the DOR output.
MASTER RESET
A high on the MASTER RESET (MR) sets all the
control logic marker bits to "0". DOR goes low and
DIR goes high. The cont ents of the data register
do not change, only declared invalid, an d will be
superseded when the first word is loaded.
8/12
Page 9
TEST CIRCUIT
TESTSWITCH
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL = 50pF or equivalent (in cludes jig and probe capac i t ance)
= 200K
R
R
Ω
L
= Z
of pulse generator (typically 50Ω)
T
OUT
HCF40105B
Open
V
DD
V
SS
WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
9/12
Page 10
HCF40105B
WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
WAVEFORM 3 : MINIMUM SETUP AND HOLD TIME (f=1MHz; 5 0% duty cycl e )
10/12
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HCF40105B
Plastic DIP-16 (0.25) MECHANICAL DATA
mm.inch
DIM.
MIN.TYPMAX.MIN.TYP.MAX.
a10.510.020
B0.771.650.0300.065
b0.50.020
b10.250.010
D200.787
E8.50.335
e2.540.100
e317.780.700
F7.10.280
I5.10.201
L3.30.130
Z1.270.050
P001C
11/12
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HCF40105B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibi lity f or the
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
systems without express written approval of STMicroelectronics.
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