JESD13B "STANDARD S PECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
HCF40104B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP packages.
HCF40104B is a universal shift register featuring
parallel inputs, parallel outputs, SHIFT RIGHT and
SHIFT LEFT serial inputs, and a high-imped ance
third output state allowing the device to be used in
bus-organized s ystem s. In t he parallel-load mode
(SO and S1 are high), data is loaded into the
DIP
ORDER CODES
PACKAGETUBET & R
DIPHCF40104BEY
associated flip-flop and appears at the output after
the positive transition of the CLO CK inpu t. Duri ng
loading, serial data flow is inhibited. Shift-right and
shift-left are synchronously accomplished on the
positive clock edge with seria l data entered at the
SHIFT RIGHT and SHIFT LEFT serial inputs,
respectively. Clearing the register is accomplished
by setting both mode controls low and clocking the
register. When the output enab le input is low, all
outputs assume the high impedance state.
PIN CONNECTION
1/10September 2002
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HCF40104B
IINPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
1
3, 4, 5, 6D0 to D3Inputs
15, 14, 13,
12
2Shift Right IN Shift Righ Input
7Shift Left IN Shift Left Input
11CLOCKClock Input
9, 10S0, S1Input (High)
8
16
FUNCTIONAL DIAGRAM
OUTPUT
ENABLE
Q0 to Q3Outputs
V
SS
V
DD
Output Enable
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
CLOCK
XXXL
X : Don’t Care
2/10
MODE SELECT
S0S1
LLHRESET
HLH
LHH
HHHPARALLEL LOAD
OUTPUT ENABLEACTION
SHIFT RIGHT (Q0
toward Q3)
SHIFT LEFT (Q3
toward Q0)
Operations occur as
shown above, but out-
puts assume high
impedance
Page 3
LOGIC DIAGRAM
HCF40104B
3/10
Page 4
HCF40104B
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values ar e referred to V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
T
Supply Voltage
DD
DC Input Voltage-0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package200mW
D
-0.5 to +22V
10mA
±
Power Dissipation per Output Transistor100mW
Operating Temperature
The Noi se Margin for bot h " 1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18Any Input18
Any Input57.5pF
-5
10
±
-40 to 85°C -55 to 125°C
0.1
±
1
±
HCF40104B
Unit
A
µ
V0/10<1109.959.959.95
V10/0<1100.050.050.05
V1/9<110777
V9/1<110333
mA
mA0/100.5<1101.12.60.90.9
1
±
A
µ
5/10
Page 6
HCF40104B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
SymbolParameter
t
PHL tPLH
t
PZH,tPZL,
t
t
t
THL tTLH
t
setup
Propagation Delay Time
Clock to Q
3-State Outputs
High Impedance
PLZ
PHZ
Transition Time 5100200
Setup Time D0, D3, SR,
SL to Clock
SO, S1 to Clock5200400
t
Hold Time D0, D3, SR, SL
hold
to Clock
SO, S1 to Clock5-1700
Clock Pulse Width590180
t
W
Clock Input Frequency536
f
CL
Clock Input Rise or Fall
, t
t
r
f
Time
(V)
V
DD
5220440
1570140
580160
152550
54590
152040
154080
580100
152050
1565130
5-650
15-150
15-550
152550
15815
51000
15100
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test ConditionValue (*)Unit
Min.Typ.Max.
ns10100200
ns103570
ns102550
ns1050100
ns103570
ns10110220
ns10-250
ns10-950
ns1040180
MHz10612
µ
s10100
6/10
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TEST CIRCUIT
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
HCF40104B
TESTSWITCH
Open
V
DD
V
SS
CL = 50pF or equivalent (includes jig and probe capacitanc e)
R
= 200K
Ω
L
R
= Z
of pulse generator (typically 50Ω)
T
OUT
WAVEFORM 1 : CK TO Q PROPAGATION DELAY TIMES (f= 1M Hz; 5 0% duty cycl e )
7/10
Page 8
HCF40104B
WAVEFORM 2 : SI, SO SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle)
WAVEFORM 3 : OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% d uty cycle)
8/10
Page 9
HCF40104B
Plastic DIP-16 (0.25) MECHANICAL DATA
mm.inch
DIM.
MIN.TYPMAX.MIN.TYP.MAX.
a10.510.020
B0.771.650.0300.065
b0.50.020
b10.250.010
D200.787
E8.50.335
e2.540.100
e317.780.700
F7.10.280
I5.10.201
L3.30.130
Z1.270.050
P001C
9/10
Page 10
HCF40104B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or the
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
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