Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD438T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD438T is silison epitaxial-base PNP power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary NPN type is HBD437T.
TO-126
Absolute Maximum Ratings (Ta=25°C)
Symbol Parametor Value Unit
VCBO Collector-Base Voltage (IE=0) -45 V
VCES Collector -Emitter Voltage (VBE=0) -45 V
VCEO Collector-Emitter Voltage (IB=0) -45 V
VEBO Emitter-Base Voltage (IC=0) -5 V
IC Collector Current -4 A
ICM
IB Base Current -1 A
PD Total Dissipation at
Tstg Storage Temperature -55 to 150
Tj Max. Operating Junction Temperature 150
Collector Peak Current (t≤10ms)
Tc=25°C
Ta=25°C
-7 A
25 W
1.3 W
°C
°C
Thermal Data
Rthj-case Thermal Resistance Junction-case Max. 6
Rthj-amb Thermal Resistance Junction-ambient Max. 96
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off Current (IE=0) VCB=-45V - - -100 uA
ICES
IEBO Emitter Cut-off Current (IC=0) VEB=-5V -1 mA
*VCEO(sus)
*VCE(sat)
*VBE Base-Emitter Voltage
*hFE DC Current Gain
fT Transition Frequency IC=-0.25A, VCE=-1V 3 - - MHz
Collector Cut-off Current
(VBE=0)
Collector-Emitter Sustaining
Voltage (IB=0)
Collector-Emitter Saturation
Voltage
VCE=-45V - - -100 uA
IC=-100mA -45 - - V
IC=-2A, IB=-0.2A - -0.2 -0.6 V
IC=-10mA,VCE=-5V - -0.58 - V
IC=-2A, VCE=-1V - - -1.2 V
IC=-10mA, VCE=-5V 30 130 IC=-0.5A, VCE=-1V 85 140 IC=-2A, VCE=-1V 40 - -
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
°C/W
°C/W
HBD438T HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 2/3
1000
Current Gain & Collector Current
100
hFE
hFE@VCE=1V hFE@VCE=5V
10
1 10 100 1000 10000
10000
Sat urati on Volta ge & Collect or Cu rrent
Collector Current - IC (mA)
1000
100
10
Saturation Voltage (mV)
Sat urati on Volta ge & Collect or Cu rrent
VCE(sat)@IC=10IB
1
1 10 100 1000 10000
Collector Current-IC (mA)
On Voltage & Collector Current
10000
1000
Saturation Voltage (mV)
VBE(sat)@IC=10IB
100
1 10 100 1000 10000
Collector Current-IC (mA)
Safe Oper at ing Area
10
(A)
1
C
0.1
Col lector Current-I
1ms 100ms 1s
0.01
1 10 100
Foward Voltage- VCE (V)
1000
On Vo ltage ( m V)
VBE(on)@VCE=1V
100
1 10 100 1000 10000
Collector Current-IC (mA)
HBD438T HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126 Dimension
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 3/3
D
E
A
B
2
1
3
I
KJ
M
α3
α4
G
C
F
H
L
Marking:
HSMC Logo
Part Number
Date Code
Style: Pin 1.Emitter 2.Collector 3.Base
Product Series
Rank
Ink Marking
α1
3-Lead TO-126 Plastic Package
e Code: T
*3°
*3°
*3°
*3°
*3°
*3°
*3°
*3°
HSMC Packa
-
-
-
-
*: Typical
DIM
Min. Max. Min. Max.
F 0.0280 0.0319 0.71 0.81
G 0.0480 0.0520 1.22 1.32
H 0.1709 0.1890 4.34 4.80
I 0.0950 0.1050 2.41 2.66
DIM
α1
α2
α3
α4
α2
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
-
-
-
A 0.1500 0.1539 3.81 3.91 J 0.0450 0.0550 1.14 1.39
B 0.2752 0.2791 6.99 7.09 K 0.0450 0.0550 1.14 1.39
C 0.5315 0.6102 13.50 15.50 L - *0.0217 - *0.55
D 0.2854 0.3039 7.52 7.72 M 0.1378 0.1520 3.50 3.86
E 0.0374 0.0413 0.95 1.05
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBD438T HSMC Product Specification
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