Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HBD139
NPN POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD140
Features
High Current (max. 1.5A)
•
Low Voltage (max. 80V)
•
Applications
Driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Symbol Parametor Conditions Min. Max. Unit
VCBO Collector-Base Voltage Open Emitter - 100 V
VCEO Collector-Emitter Voltage Open Base - 80 V
VEBO Emitter-Base Voltage Open Collector - 5 V
IC Collector Current (DC) - 1.5 A
ICM Peak Collector Current - 2 A
IBM Peak Base Current - 1 A
PD Total Dissipation at
Tstg Storage Temperature - -65 150
Tj Junction Temperature - - 150
Tamb Operating Ambient Temperature - -65 150
Ta=25°C
Tc=25°C
-1.2W
-15W
C
°
C
°
C
°
(Tj=25°C, unless otherwise specified)
Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off Current IE=0, VCB=30V - - 100 nA
IEBO Emitter Cut-off Current IC=0, VEB=5V - - 100 nA
*VCE(sat)
*VBE Base-Emitter Voltage IC=500mA, VCE=2V - - 1 V
fT Transition Frequency IC=50mA, VCE=5V, f=100MHz - 240 - MHz
*hFE1/hFE2
HBD139 HSMC Product Specification
Collector-Emitter
Saturation Voltage
DC current gain ratio of
the complementary pairs
IC=500mA, IB=50mA - - 0.5 V
VCE=2V, IC=5mA 40 - - VCE=2V, IC=150mA 63 - 250 -hFE DC Current Gain
VCE=2V, IC=500mA, 25 - - -
|IC|=150mA, |VCE|=2V - 0.9 1.6 -
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 2/3
1000
hFE @ VCE=2V
100
hFE
10
0.1 1 10 100 1000 10000
Collector Current -IC (mA)
Saturation Voltage & Coll ector Current
1000
Current Gain & Collector Current
V
CE(sat)
@ IC=10I
B
1000
100
CE(sat)
V
@ IC=10I
Saturation Voltage (mV)
10
1 10 100 1000 10000
Collector Current -IC (mA)
ON Voltage & Collector Current
1000
BE(on)
V
@ VCE=2V
Saturation Voltage & Coll ector Current
B
Saturation Voltage (mV)
100
1 10 100 1000 10000
Collector Current -IC (mA)
Safe Operating Arae
10
(A)
1
C
PT=1mS
PT=100mS
0.1
Collector Current -I
0.01
1 10 100 1000
Forwar d Voltage ( V)
PT=1S
ON Voltage (mV)
100
0.1 1 10 100 1000 10000
Collector Current -IC (mA)
HBD139 HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126 Dimension
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 3/3
DIM
1
α
2
α
3
α
4
α
D
E
A
B
2
1
3
I
KJ
α
3
α
G
C
F
H
α
1
α
2
3-Lead TO-126 Plastic Package
L
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
-
-
-
-
*3
*3
*3
*3
°
°
°
°
-
-
-
-
M
4
e Code : T
DIM
*3
*3
*3
*3
°
°
°
°
F 0.0280 0.0319 0.71 0.81
G 0.0480 0.0520 1.22 1.32
H 0.1709 0.1890 4.34 4.80
I 0.0950 0.1050 2.41 2.66
Marking :
HD
B
139
Date Code
Style : Pin 1.Emitter 2.Collector 3.Bas e
Control Code
Laser Marking
Min. Max. Min. Max.
A 0.1500 0.1539 3.81 3.91 J 0.0450 0.0550 1.14 1.39
B 0.2752 0.2791 6.99 7.09 K 0.0450 0.0550 1.14 1.39
C 0.5315 0.6102 13.50 15.50 L - *0.0217 - *0.55
D 0.2854 0.3039 7.52 7.72 M 0.1378 0.1520 3.50 3.86
E 0.0374 0.0413 0.95 1.05
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your l ocal HSMC sales office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HBD139 HSMC Product Specification
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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