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HI-SINCERITY
MICROELECTRONICS CORP.
HBC848
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC848 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2002.10.24
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e.......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 30 - - V IC=100uA
BVCEO 30 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 15 nA VCB=30V
*VCE(sat)1 - 90 250 mV IC=10mA, IB=0.5mA
*VCE(sat)2 - 200 600 mV IC=100mA, IB=5mA
*VBE(sat)1 - 700 - mV IC=10mA, IB=0.5mA
*VBE(sat)2 - 900 - mV IC=100mA, IB=5mA
VBE(on)1 580 - 700 mV VCE=5V, IC=2mA
VBE(on)2 - - 770 mV VCE=5V, IC=10mA
*hFE 110 - 800 VCE=5V, IC=2mA
fT - 300 - MHz VCE=5V, IC=10mA
Cob - 3.5 6 pF VCB=10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23
Classification Of hFE
Rank A B C
hFE 110-220 200-450 420-800
HBC848 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2002.10.24
Page No. : 2/3
1000
100
Current Gain-hFE
10
1
0.1 1 10 100 1000
Curre nt Gain & Col lector Curren t
hFE @ VCE=5V
Collector Current-IC (mA)
10000
On Voltage & Collecto r Cu r r e nt
100000
10000
V
@ IC=20I
1000
Saturation Voltage (mV)
100
10
BE(sat)
V
CE(sat)
0.1 1 10 100 1000
@ IC=20I
B
B
Collector Current-IC (mA)
Capacitan ce & Rev er s e- Biased Vol tage
10
Satu r ation Vol tage & Coll ec t or Current
1000
V
BE(on)
On Vo ltage ( m V)
100
0.1 1 10 100 1000
@ VCE=5V
Collector Current-IC (mA)
1000
100
Cutoff Frequency & Collector Current
VCE=5V
Cutoff Frequence (MHz)
Cob
1
Capacitance (pF)
0.1
0.1 1 10 100
Reverse-Biased Voltage (V)
Safe Oper a t ing Area
10000
PT=1ms
1000
(mA)
C
100
Collector Current-I
10
PT=100ms
PT=1s
10
110100
Collector Current-IC (mA)
1
1 10 100
Forward Voltage-VCE (V)
HBC848 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2002.10.24
Page No. : 3/3
A
L
3
B
S
21
GV
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
8 C
Rank Code
Control Code
C
JK
DIM
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Min. Max. Min. Max.
DIM
D
H
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Marking:
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBC848 HSMC Product Specification
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